STGD3NB60HDT4

STGD3NB60HD N-CHANNEL 6A - 600V - DPAK PowerMESH™ IGBT TYPE VCES VCE(sat) (Max) @25°C IC @100°C STGD3NB60HD 600 V < 2.8 V 6A ■ ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH FREQUENCY OPERATION TYPICAL SHORT CIRCUIT WITHSTAND TIME 5micro S-family, 4 micro H family CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. ) s ( ct 3 1 DPAK c u d ) s t( o r P INTERNAL SCHEMATIC DIAGRAM e t le o s b O - APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS ■ SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ■ u d o r P e t e l o s b O ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STGD3NB60HDT4 GD3NB60HD DPAK TAPE & REEL September 2003 1/10 STGD3NB60HD ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at TC = 25°C 10 A IC Collector Current (continuous) at TC = 100°C 6 A Collector Current (pulsed) 24 A ICM (
) PTOT Tstg Tj Total Dissipation at TC = 25°C 50 W Derating Factor 0.4 W/°C –55 to 150 °C Storage Temperature Operating Junction Temperature (
) Pulse width limited by safe operating area THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.5 Rthj-amb Thermal Resistance Junction-ambient Max 100 r P e t le uc ) s t( od °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) ICES IGES Collector cut-off (VGE = 0) Symbol bs IC = 250 µA, VGE = 0 (t s) Min. Typ. c u d Parameter Unit V 50 µA VCE = Max Rating, TC = 125 °C 100 µA VGE = ±20V , VCE = 0 ±100 nA Max. Unit 5 V 2.8 V Test Conditions Min. Typ. VGE(th) Gate Threshold Voltage VCE = VGE, IC = 250µA VCE(sat) Collector-Emitter Saturation Voltage VGE = 15V, IC = 3 A 2.4 VGE = 15V, IC = 3 A, Tj =125°C 1.9 2/10 Max. 600 VCE = Max Rating, TC = 25 °C Gate-Emitter Leakage Current (VCE = 0) o r P e o s b O Test Conditions Collector-Emitter Breakdown Voltage t e l o ON (1) O Parameter 3 V STGD3NB60HD ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol gfs Parameter Forward Transconductance Test Conditions Min. VCE = 25 V , IC =3 A Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 25V, f = 1 MHz, VGE = 0 Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480V, IC = 3 A, VGE = 15V ICL Latching Current Vclamp = 480 V , Tj = 125°C RG = 10 Ω Typ. Max. Unit 2.4 S 235 33 6.6 pF pF pF 21 6 7.6 27 12 nC nC nC A SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Test Conditions Min. Turn-on Delay Time Rise Time VCC = 480 V, IC = 3 A RG = 10Ω , VGE = 15 V Turn-on Current Slope Turn-on Switching Losses VCC= 480 V, IC = 3 A RG=10Ω VGE = 15 V,Tj = 125°C tc Parameter Cross-over Time Test Conditions 77 ns 33 µJ 100 µJ 180 ns 82 ns 58 ns 110 ns Turn-off Switching Loss 88 µJ Total Switching Loss 165 µJ so Turn-off Switching Loss Total Switching Loss Cross-over Time Off Voltage Rise Time td(off) Delay Time o r P e Fall Time Ets Unit ns tr(Voff) Eoff(**) Max. ns Fall Time tf Typ. 53 Delay Time tc o r P 36 Off Voltage Rise Time Ets c u d A/µs µJ ns td(off) Eoff(**) e t le Vcc = 480 V, IC =3 A, RGE = 10 Ω , VGE = 15 V ) s t( ns ns 400 77 Min. Unit 76 tr(Voff) tf Max. 5 11 SWITCHING OFF Symbol Typ. c u d (t s) b O - Vcc = 480 V, IC = 3 A, RGE = 10 Ω , VGE = 15 V Tj = 125 °C t e l o Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) s b O COLLECTOR-EMITTER DIODE Symbol Parameter Test Conditions Min. Typ. Ifm Forward Current Forward Current pulsed Vf Forward On-Voltage If = 1.5 A If = 1.5 A, Tj = 125 °C 1.6 1.3 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 1.5 A ,VR = 400 V, Tj =125°C, di/dt = 100 A/µs 95 110 2.7 If trr Qrr Irrm Max. Unit 1.5 12 A A 2.1 V V ns nC A 3/10 STGD3NB60HD Thermal Impedance Transfer Characteristics Output Characteristics c u d e t le Transconductance u d o r P e t e l o s b O 4/10 ) s ( ct ) s t( o r P o s b O - Collector-Emitter On Voltage vs Temperature STGD3NB60HD Collector-Emitter On Voltage vs Collettor Current Normalized Breakdown Voltage vs Temperature Gate Threshold vs Temperature Capacitance Variations c u d e t le ) s ( ct u d o Gate Charge vs Gate-Emitter Voltage ) s t( o r P o s b O - Total Switching Losses vs Gate Resistance r P e t e l o s b O 5/10 STGD3NB60HD Total Switching Losses vs Temperature Emitter-collector Diode Characteristics Total Switching Losses vs Collector Current Switching Off Safe Operating Area c u d e t le ) s ( ct u d o r P e t e l o s b O 6/10 o s b O - o r P ) s t( STGD3NB60HD Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O 7/10 STGD3NB60HD TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 G 4.40 4.60 0.173 H 9.35 10.10 0.368 L2 0.8 e t le L4 0.60 1.00 0.024 V2 0o 8o 0o ) s ( ct o s b O - TYP. MAX. c u d ) s t( 0.260 o r P 0.181 0.398 0.031 0.039 0o u d o r P e t e l o s b O P032P_B 8/10 STGD3NB60HD DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* c u d ) s t( REEL MECHANICAL DATA DIM. A mm e t le ct TAPE MECHANICAL DATA DIM. mm A0 6.8 t e l o B0 B1 s b O D D1 E o r P e MIN. 10.4 1.5 MAX. MIN. 0.267 0.275 10.6 0.409 0.417 12.1 0.476 1.6 0.059 0.063 MIN. 330 B 1.5 C 12.8 D 20.2 G 16.4 N 50 T 13.2 MAX. 12.992 0.059 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R W 40 15.7 16.3 1.574 0.618 * on sales type MAX. MAX. 7 1.5 1.65 du inch (s) o s b O - o r P MIN. inch 0.641 9/10 STGD3NB60HD c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics s b O © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 10/10