STGP10NC60K

STGB10NC60K 10 A, 600 V short-circuit rugged IGBT Features ■ Low on voltage drop (VCESAT) ■ Short-circuit withstand time 10 µs TAB ) s ( ct Applications ■ u d o High frequency motor controls 3 ■ SMPS and PFC in both hard switch and resonant topologies ■ Motor drives 1 r P e D²PAK t e l o Description This device utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. ) (s s b O Figure 1. Internal schematic diagram t c u d o r P e t e l o s b O Table 1. Device summary Part number Marking Package Packaging STGB10NC60KT4 GB10NC60K D²PAK Tape and reel February 2011 Doc ID 11842 Rev 4 1/11 www.st.com 11 Electrical ratings 1 STGB10NC60K Electrical ratings Table 2. Absolute maximum ratings Symbol VCES Parameter Value Unit Collector-emitter voltage (VGE = 0) 600 V IC (1) Continuous collector current at TC = 25°C 20 A IC (1) Continuous collector current at TC = 100°C 10 A ICL (2) Turn-off latching current 30 A (3) Pulsed collector current 30 VGE Gate-emitter voltage ±20 PTOT Total dissipation at TC = 25°C 65 TSTG Storage temperature ICP TJ tSCW Operating junction temperature e t e l Short-circuit withstand time (VCE = 0.5 VCES, TJ = 125 °C, RG = 10 Ω, VGE = 12 V) ) s ( ct A du o r P V W – 55 to 150 °C 10 µs Value Unit o s b 1. Calculated according to the iterative formula: T j ( max ) – T C I C ( T C ) = ------------------------------------------------------------------------------------------------------R thj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) ) O ) 2. Vclamp = 80 % VCES, VGE = 15 V, RG = 10 Ω, TJ = 150 °C s ( t c 3. Pulse width limited by maximum junction temperature and turn-off within RBSOA Symbol let o s b u d o r P e Table 3. Thermal data Parameter RthJC Thermal resistance junction-case 1.9 °C/W RthJA Thermal resistance junction-ambient 62.5 °C/W O 2/11 Doc ID 11842 Rev 4 STGB10NC60K 2 Electrical characteristics Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static Symbol Parameter Test conditions V(BR)CES Collector-emitter breakdown IC= 1mA voltage (VGE= 0) VCE(sat) Collector-emitter saturation voltage VGE= 15V, IC= 5A VGE= 15V, IC= 5A, TJ=125°C VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA ICES Collector cut-off current (VGE = 0) VCE = 600 V VCE = 600 V, TJ = 125 °C IGES Gate-emitter leakage current (VCE = 0) VGE= ± 20 V gfs (1) Forward transconductance VCE = 15 V, IC = 5A Table 5. Dynamic Symbol Parameter ) (s Max. e t e ol V 2.2 1.8 2.5 Test conditions 6.5 V 150 1 µA mA ±100 nA c u d o r P Min. 15 Typ. V V ) s ( t 4.5 s b O Unit S Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25V, f = 1MHz, VGE = 0 380 46 8.5 pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 390V, IC = 5A, VGE = 15V, (see Figure 17) 19 5 9 nC nC nC t e l o Table 6. Symbol t c u od r P e O Typ. 600 1. Pulse test: pulse duration < 300 µs, duty cycle < 2 %. bs Min. Switching on/off (inductive load) Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time tr Current rise time (di/dt)on Turn-on current slope VCC = 390V, IC = 5A RG= 10Ω, VGE= 15V, (see Figure 18) 17 6 655 ns ns A/µs td(on) Turn-on delay time tr Current rise time (di/dt)on Turn-on current slope VCC = 390V, IC = 5A RG= 10Ω, VGE= 15V, Tj=125°C (see Figure 18) 16.5 6.5 575 ns ns A/µs tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time Vcc = 390V, IC = 5A, RGE = 10Ω, VGE = 15V, (see Figure 18) 33 72 82 ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time Vcc = 390V, IC = 5A, RGE=10Ω, VGE =15V, Tj=125°C (see Figure 18) 60 106 136 ns ns ns Doc ID 11842 Rev 4 3/11 Electrical characteristics Table 7. STGB10NC60K Switching energy (inductive load) Symbol Parameter Test conditions Min Typ Max Unit Eon(1) Eoff(2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 390V, IC = 5A RG= 10Ω, VGE=15V, (see Figure 18) 55 85 140 µJ µJ µJ Eon(1) Eoff(2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 390V, IC = 5A RG= 10Ω, VGE= 15V, Tj= 125°C (see Figure 18) 87 162 249 µJ µJ µJ 1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) ) s ( ct 2. Turn-off losses include also the tail of the collector current 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. u d o r P e Transfer characteristics t e l o ) (s s b O t c u d o r P e t e l o Figure 4. s b O 4/11 Transconductance Figure 5. Doc ID 11842 Rev 4 Collector-emitter on voltage vs temperature STGB10NC60K Figure 6. Electrical characteristics Gate charge vs. gate-source voltage Figure 7. Capacitance variations ) s ( ct Figure 8. Normalized gate threshold voltage vs. temperature Figure 9. u d o r P e Collector-emitter on voltage vs collector current t e l o ) (s s b O t c u d o r P e t e l o Figure 10. Normalized breakdown voltage vs temperature Figure 11. Switching losses vs temperature s b O Doc ID 11842 Rev 4 5/11 Electrical characteristics STGB10NC60K Figure 12. Switching losses vs. gate resistance Figure 13. Switching losses vs collector current ) s ( ct Figure 15. Turn-off SOA t e l o ) (s s b O t c u d o r P e t e l o s b O 6/11 u d o r P e Figure 14. Thermal impedance Doc ID 11842 Rev 4 STGB10NC60K 3 Test circuits Test circuits Figure 16. Test circuit for inductive load switching Figure 17. Gate charge test circuit ) s ( ct u d o r P e t e l o Figure 18. Switching waveform ) (s s b O t c u d o r P e t e l o s b O Doc ID 11842 Rev 4 7/11 Package mechanical data 4 STGB10NC60K Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 8. D²PAK (TO-263) mechanical data mm Dim. Min. A 4.40 A1 0.03 b 0.70 b2 1.14 c 0.45 c2 1.23 D 8.95 D1 7.50 E 10 e 8.50 u d o e1 o s b O 8/11 du 0.23 e t e l o s b O ) o r P 0.93 1.70 0.60 1.36 9.35 10.40 2.54 4.88 5.28 15 15.85 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 Pr H e t e l Max. 4.60 s ( t c E1 ) s ( ct Typ. J1 R V2 0.4 0° 8° Doc ID 11842 Rev 4 STGB10NC60K Package mechanical data Figure 19. D²PAK (TO-263) drawing ) s ( ct u d o r P e t e l o ) (s s b O 0079457_R t c u d o r P e t e l o s b O Doc ID 11842 Rev 4 9/11 Revision history 5 STGB10NC60K Revision history Table 9. Document revision history Date Revision Changes 21-Nov-2005 1 New release 06-Dic-2005 2 Inserted row on Table 2: Absolute maximum ratings 08-Feb-2007 3 Description has been updated 24-Feb-2011 4 Updated package mechanical data Table 8. on page 8 and Figure 19. on page 9 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 10/11 Doc ID 11842 Rev 4 STGB10NC60K ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. r P e All ST products are sold pursuant to ST’s terms and conditions of sale. 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