STGP19NC60W

STGW19NC60W 19 A, 600 V - ultrafast IGBT Datasheet - production data Features   ) s t( High frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility) Applications 1 2   3  c u d o r P High frequency inverters High frequency motor controls, inverters, UPS HF, SMPS and PFC in both hard switch and resonant topologies e t le o s bDescription TO-247 O ) Figure 1: Internal schematic diagram s ( t c This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. u d o r P e t e ol s b O Table 1: Device summary Order code Marking Package Packaging STGW19NC60W GW19NC60W TO-247 Tube November 2016 DocID12759 Rev 4 This is information on a product in full production. 1/13 www.st.com Contents STGW19NC60W Contents 1  Electrical ratings ............................................................................... 3  2  Electrical characteristics ................................................................. 4  2.1  Electrical characteristics (curves) ....................................................... 6  3  Test circuits ...................................................................................... 9  4  Package information ...................................................................... 10  4.1  5  TO-247 package information ............................................................ 10  ) s t( Revision history .............................................................................. 12  c u d e t le o s b O ) s ( t c u d o r P e t e ol s b O 2/13 DocID12759 Rev 4 o r P STGW19NC60W 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0) 600 V IC Continuous collector current at TC = 25 °C 42 A IC(1) Continuous collector current at TC = 100 °C 23 A ICL(2) Turn-off latching current 30 A ) s t( (1) VGE Gate-emitter voltage ±20 PTOT Total dissipation at TC = 25 °C 140 Tstg Storage temperature range TJ Operating junction temperature range uc - 55 to 150 d o r Notes: (1)Calculated °C P e et according to the iterative formula: ்಻ಾಲ೉ ି்಴ ‫ܫ‬஼ ሺܶ஼ ሻ ൌ ோ V W ೅ಹ಻ష಴ ൈ௏಴ಶೄಲ೅ሺ౉ఽ౔ሻ ሺ்಻ሺ೘ೌೣሻ ൈூ಴ ሺ்಴ ሻሻ (2)V CLAMP l o s = 80% (VCES), VGE = 15 V, RG = 10 Ω, TJ = 150 °C b O - Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.9 °C/W Rthj-amb Thermal resistance junction-ambient max 50 °C/W ) s t( c u d e t le o r P o s b O DocID12759 Rev 4 3/13 Electrical characteristics 2 STGW19NC60W Electrical characteristics TC = 25 °C unless otherwise specified Table 4: Static Symbol Parameter Test conditions V(BR)CES Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation voltage VGE(th) Gate threshold voltage ICES Collector cut-off current VGE = 0 V, VCE = 600 V, TC=125 °C (1) IGES Gate-emitter leakage current VCE = 0 V, VGE = ± 20 V Forward transconductance VCE = 15 V, IC= 12 A Min. VGE = 0 V, IC = 1 mA Typ. 600 VGE = 15 V, IC = 12 A 2.1 VGE = 15 V, IC = 12 A, TJ = 125 °C 1.8 VCE = VGE, IC = 250 µA 3.75 e t e V ) s t( 5.75 V 150 µA 1 mA ±100 nA 10 S l o s Notes: (1)Defined 2.5 uc od Pr Unit V VGE = 0 V, VCE = 600 V gfs Max. by design, not subject to production test. b O - Table 5: Dynamic ) s ( Symbol Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance t c u od Pr Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge e t le Test conditions VCE= 25 V, f = 1 MHz, VGE = 0 V VCE = 390 V, IC = 12 A, VGE = 15 V (see Figure 16: "Gate charge test circuit") o s b O 4/13 DocID12759 Rev 4 Min. Typ. Max. - 1180 - - 130 - - 26 - - 53 - - 10 - - 21 - Unit pF nC STGW19NC60W Electrical characteristics Table 6: Switching on/off (inductive load) Symbol Parameter td(on) Test conditions VCC = 390 V, IC = 12 A, VGE = 15 V, RG = 10 Ω (see Figure 17: "Switching waveform") Turn-on delay time tr Current rise time (di/dt)on Turn-on current slope td(on) VCC = 390 V, IC = 12 A, VGE = 15 V, RG = 10 Ω, TC = 125°C (see Figure 17: "Switching waveform") Turn-on delay time tr Current rise time (di/dt)on Turn-on current slope tr(Voff) Off voltage rise time td(off) Turn-off delay time tf VCC = 390 V, IC = 12 A, VGE = 15 V, RG = 10 Ω (see Figure 17: "Switching waveform") Current fall time tr(Voff) Off voltage rise time td(off) Turn-off delay time tf VCC = 390 V, IC = 12 A, VGE = 15 V, RG = 10 Ω, TC = 125°C (see Figure 17: "Switching waveform") t e ol Typ. Max. Unit - 25 - ns - 7 - ns - 1600 - A/µs - 25 - ns - 8 - ns - 1400 - A/µs - 22 - 90 - ns - ns 43 ) s ( - ns 47 - ns - 127 - ns - 77 - ns Min. Typ. Max. Unit - 81 - µJ - 125 - µJ t c u - d o r eP Current fall time Min. Table 7: Switching energy (inductive load) Symbol Parameter Eon(1) Turn-on switching energy Eoff Turn-off switching energy (2) Ets Total switching energy ) s t( Eon(1) Turn-on switching energy Eoff(2) Turn-off switching energy P e et bs bs -O c u d ro Ets ol Test conditions Total switching energy VCC = 390 V, IC = 12 A, RG= 10 Ω, VGE= 15 V (see Figure 17: "Switching waveform") VCC = 390 V, IC = 12 A, RG= 10 Ω, VGE= 15 V, TC = 125°C (see Figure 17: "Switching waveform") - 206 - µJ - 161 - µJ - 255 - µJ - 416 - µJ Notes: (1)Including the reverse recovery of the external diode. The diode is the same of the co-packed STGW19NC60WD. (2)including the tail of the collector current. O DocID12759 Rev 4 5/13 Electrical characteristics 2.2 STGW19NC60W Electrical characteristics (curves) Figure 2: Output characteristics Figure 3: Transfer characteristics ) s t( c u d Figure 4: Transconductance o r P Figure 5: Collector-emitter on voltage vs temperature e t le o s b O ) s ( t c u d o r P e t e l Figure 6: Gate charge vs gate-source voltage o s b O 6/13 DocID12759 Rev 4 Figure 7: Capacitance variations STGW19NC60W Electrical characteristics Figure 8: Normalized gate threshold voltage vs temperature Figure 9: Collector-emitter on voltage vs collector current ) s t( Figure 10: Normalized breakdown voltage vs temperature c u d o r P Figure 11: Switching energy vs temperature e t le o s b O ) s ( t c u d o r P e Figure 12: Switching energy vs gate resistance t e ol Figure 13: Switching energy vs collector current s b O DocID12759 Rev 4 7/13 Electrical characteristics STGW19NC60W Figure 14: Turn-off SOA ) s t( c u d e t le o s b O ) s ( t c u d o r P e t e ol s b O 8/13 DocID12759 Rev 4 o r P STGW19NC60W 3 Test circuits Test circuits Figure 15: Test circuit for inductive load switching C A Figure 16: Gate charge test circuit A L=100 µH G E B B + 3.3 µF C G RG 1000 µF VCC D.U.T ) s t( E - c u d AM01504v 1 e t le Figure 17: Switching waveform so VG VCE ) (s IC t c u Ob o r P 90% 10% 90% 10% Tr(Vof f) Tcross 90% 10% Td(of f) Td(on) Tr(Ion) Ton d o r Tf Toff AM01506v1 P e et l o s Ob DocID12759 Rev 4 9/13 Package information 4 STGW19NC60W Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 TO-247 package information Figure 18: TO-247 package outline ) s t( c u d e t le o r P o s b O ) s ( t c u d o r P e t e ol s b O 0075325_8 10/13 DocID12759 Rev 4 STGW19NC60W Package information Table 8: TO-247 package mechanical data mm Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 L1 3.70 3.55 ØR 4.50 S 5.30 ) s t( 5.60 d o r P e et 18.50 ØP uc 5.45 L2 l o s 5.50 ) s t( 14.80 4.30 3.65 5.50 5.70 b O - c u d e t le o r P o s b O DocID12759 Rev 4 11/13 Revision history 5 STGW19NC60W Revision history Table 9: Document revision history Date Revision 04-Oct-2006 1 Changes Initial release. 08-May-2007 2 Modified value on Table 2 20-Nov-2008 3 Inserted packages: D2PAK and TO-247 4 The part numbers STGB19NC60W and STGP19NC60W have been moved to a separate datasheet Modified: Table 2: "Absolute maximum ratings", Table 4: "Static" and Table 7: "Switching energy (inductive load)" Minor text changes 07-Nov-2016 ) s t( c u d e t le o s b O ) s ( t c u d o r P e t e ol s b O 12/13 DocID12759 Rev 4 o r P STGW19NC60W IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. ) s t( No license, express or implied, to any intellectual property right is granted by ST herein. c u d Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. o r P ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. e t le Information in this document supersedes and replaces information previously supplied in any prior versions of this document. o s b O ) © 2016 STMicroelectronics – All rights reserved s ( t c u d o r P e t e ol s b O DocID12759 Rev 4 13/13