STGP35HF60W

STGP35HF60W 35 A, 600 V Ultrafast IGBT Datasheet − production data Features ■ Improved Eoff at elevated temperature ■ Minimal tail current ■ Low conduction losses Applications ■ Welding ■ High frequency converters ■ Power factor correction 3 1 2 TO-220 Description This Ultrafast IGBT is developed using a new planar technology to yield a device with tighter switching energy variation (Eoff) versus temperature. The suffix "W" denotes a subset of products designed for high switching frequency operation (over 100 kHz). Table 1. Figure 1. Internal schematic diagram Device summary Order codes Markings Packages Packaging STGP35HF60W GP35HF60W TO-220 Tube November 2012 This is information on a product in full production. Doc ID 023894 Rev 1 1/13 www.st.com 13 Contents STGP35HF60W Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ............................................... 9 Doc ID 023894 Rev 1 STGP35HF60W 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0) 600 V IC (1) Continuous collector current at TC = 25 °C 60 A IC (1) Continuous collector current at TC = 100 °C 35 A ICP(2) Pulsed collector current 150 A (3) Turn-off latching current 80 A VCES ICL VGE Gate-emitter voltage ± 20 V PTOT Total dissipation at TC = 25 °C 200 W Tstg Storage temperature – 55 to 150 °C Value Unit Tj 1. Parameter Operating junction temperature Calculated according to the iterative formula: Tj ( max ) – TC IC ( T C ) = ------------------------------------------------------------------------------------------------------Rthj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) ) 2. Pulse width limited by maximum junction temperature and turn-off within RBSOA 3. VCLAMP = 80% (VCES), VGE = 15 V, RG = 10 Ω, TJ = 150 °C Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case IGBT 0.63 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 °C/W Doc ID 023894 Rev 1 3/13 Electrical characteristics 2 STGP35HF60W Electrical characteristics TJ = 25 °C unless otherwise specified) Table 4. Symbol Parameter V(BR)CES Collector-emitter breakdown voltage (VGE = 0) VCE(sat) Collector-emitter saturation voltage VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) VCE = 600 V VCE = 600 V, TJ = 125 °C IGES Gate-emitter leakage current (VCE = 0) VGE = ±20 V Table 5. Symbol 4/13 Static Test conditions IC = 1 mA Min. Typ. Max. Unit 600 V VGE = 15 V, IC= 20 A 2.5 V VGE = 15V, IC = 20 A,TJ= 125 °C 1.65 3.75 5.75 V 250 1 µA mA ± 100 nA Dynamic Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE = 0 - 2400 235 50 - pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 400 V, IC = 20 A, VGE = 15 V, (see Figure 16) - 140 13 52 - nC nC nC Doc ID 023894 Rev 1 STGP35HF60W Table 6. Symbol Electrical characteristics Switching on/off (inductive load) Parameter Test conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 400 V, IC = 20 A RG = 10 Ω, VGE = 15 V, (see Figure 15) - 30 15 1650 - ns ns A/µs td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 400 V, IC = 20 A RG = 10 Ω, VGE = 15 V, TJ = 125 °C (see Figure 15) - 30 15 1600 - ns ns A/µs tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 400 V, IC = 20 A, RGE = 10 Ω, VGE = 15 V (see Figure 15) - 30 175 40 - ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 400 V, IC = 20 A, RGE = 10 Ω, VGE =15 V, TJ = 125 °C (see Figure 15) - 50 225 70 - ns ns ns Min. Typ. Max. Unit Table 7. Symbol Switching energy (inductive load) Parameter Test conditions Eon(1) Eoff Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 400 V, IC = 20 A RG = 10 Ω, VGE = 15 V, (see Figure 17) - 290 185 475 Eon(1) Eoff Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 400 V, IC = 20 A RG = 10 Ω, VGE = 15 V, TJ = 125 °C (see Figure 17) - 420 350 770 µJ µJ µJ 530 µJ µJ µJ 1. Eon is the tun-on losses when a typical diode is used in the test circuit in Figure 17. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs and diode are at the same temperature (25 °C and 125 °C). Eon include diode recovery energy. Doc ID 023894 Rev 1 5/13 Electrical characteristics STGP35HF60W 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. AM16250v1 IC (A) VGE = 15 V Transfer characteristics AM16249v1 IC (A) 11 V 10 V VCE = 10 V 150 150 9V 100 100 8V 50 50 7V VGE = 6 V 0 0 Figure 4. 2 4 6 0 VCE (V) 8 Normalized VCE(sat) vs. IC 0 3 Figure 5. AM16251v1 VCE(sat) (norm) 6 9 VGE (V) Normalized VCE(sat) vs. temperature AM16252v1 VCE(sat) (norm) VGE = 15 V IC = 80 A 1.4 1.4 TJ = -50 °C TJ = 25 °C 1.2 IC = 60 A 1.2 TJ = 150 °C 1 10 A IC = 40 A 30 A 1 0.8 IC = 5 A 0.6 0.4 VGE = 15 V 0 Figure 6. 20 20 A 0.8 40 60 IC (A) Normalized breakdown voltage vs. temperature AM16253v1 V CES (norm) 0.6 -50 Figure 7. 0 50 100 TJ (°C) Normalized gate threshold voltage vs. temperature AM16254v1 VGE(th) (norm) 1.1 1.05 1 0.9 1 0.8 IC = 1 mA 0.95 VGE = VCE 0.7 0.9 -50 6/13 0 50 100 TJ (°C) 0.6 -50 Doc ID 023894 Rev 1 IC = 250 µA 0 50 100 TJ (°C) STGP35HF60W Figure 8. Electrical characteristics Gate charge vs. gate-emitter voltage AM16255v1 VGE (V) Capacitance variations AM16256v1 C (pF) f = 1 MHz VGE = 0 4000 VCC = 400 V 12 Figure 9. IC = 20 A 3000 Cies 8 2000 4 1000 Coes Cres 0 0 30 60 90 120 Figure 10. Switching losses vs. temperature AM16257v1 E (µJ) 0 QG (nC) 0 10 20 30 VCE (V) 40 Figure 11. Switching losses vs. gate resistance AM16258v1 E (µJ) 400 EOFF 1500 EON 350 EON EOFF 300 1000 250 V CE = 400 V,, VGE = 15 V VCE = 400 V, VGE= 15 V 500 IC = 20 A, TJ = 125 °C I C = 20 A, RG =10 Ω 200 150 25 50 75 100 0 TJ (°C) Figure 12. Switching losses vs. collector current AM16259v1 E (µJ) 0 60 120 180 Rg (Ω) Figure 13. Turn-off SOA AM16260v1 IC (A) 800 EON 100 600 EOFF 10 400 VGE = 15 V, RG = 10 Ω TC = 150 °C 200 0 10 1 VCE = 400 V, VGE = 15 V RG = 10 Ω, TJ = 125 °C 0.1 15 20 25 30 35 IC (A) 1 Doc ID 023894 Rev 1 10 100 VCE (V) 7/13 Electrical characteristics STGP35HF60W Figure 14. Thermal impedance GC18460 8/13 Doc ID 023894 Rev 1 STGP35HF60W 3 Test circuits Test circuits Figure 15. Test circuit for inductive load switching Figure 16. Gate charge test circuit AM01504v1 AM01505v1 Figure 17. Switching waveform 90% 10% VG 90% VCE 10% Tr(Voff) Tcross 90% IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff AM01506v1 Doc ID 023894 Rev 1 9/13 Package mechanical data 4 STGP35HF60W Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 8. TO-220 type A mechanical data mm Dim. Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 10/13 Typ. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 023894 Rev 1 STGP35HF60W Package mechanical data Figure 18. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 023894 Rev 1 11/13 Revision history 5 STGP35HF60W Revision history Table 9. 12/13 Document revision history Date Revision 06-Nov-2012 1 Changes Initial release. Doc ID 023894 Rev 1 STGP35HF60W Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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