STGW15H120F2,
STGWA15H120F2
Trench gate field-stop IGBT, H series
1200 V, 15 A high speed
Datasheet - production data
Features
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat) = 2.1 V (typ.) @ IC = 15 A
72
72ORQJOHDGV
• 5 µs minimum short-circuit withstand time at
TJ=150 °C
• Safe paralleling
• Low thermal resistance
Applications
Figure 1. Internal schematic diagram
• Uninterruptible power supply
• Welding machines
• Photovoltaic inverters
&
• Power factor correction
• High frequency converters
*
6&
Description
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. These devices are part of the improved
H series of IGBTs, which represent an optimum
compromise between conduction and switching
loss to maximize the efficiency of high frequency
converters. Furthermore, a slightly positive
VCE(sat) temperature coefficient and very tight
parameter distribution result in safer paralleling
operation.
(
Table 1. Device summary
Order code
Marking
Package
Packing
STGW15H120F2
G15H120F2
TO-247
Tube
STGWA15H120F2
G15H120F2
TO-247 long leads
Tube
April 2015
This is information on a product in full production.
DocID026013 Rev 5
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www.st.com
17
Contents
STGW15H120F2, STGWA15H120F2
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5
2/17
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.1
TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.2
TO-247 long leads, package information . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
DocID026013 Rev 5
STGW15H120F2, STGWA15H120F2
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
VCES
Parameter
Collector-emitter voltage (VGE = 0)
Value
Unit
1200
V
IC
Continuous collector current at TC = 25 °C
30
A
IC
Continuous collector current at TC = 100 °C
15
A
ICP(1)
Pulsed collector current
60
A
VGE
Gate-emitter voltage
±20
V
PTOT
Total dissipation at TC = 25 °C
259
W
TSTG
Storage temperature range
-55 to 150
°C
Operating junction temperature
-55 to 175
°C
Value
Unit
0.58
°C/W
50
°C/W
TJ
1. Pulse width limited by maximum junction temperature.
Table 3. Thermal data
Symbol
Parameter
RthJC
Thermal resistance junction-case
RthJA
Thermal resistance junction-ambient
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Electrical characteristics
2
STGW15H120F2, STGWA15H120F2
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 2 mA
Min.
Gate threshold voltage
VCE = VGE, IC = 500 µA
ICES
Collector cut-off current
(VGE = 0)
IGES
Gate-emitter leakage
current (VCE = 0)
Unit
V
2.1
VGE = 15 V, IC = 15 A
Collector-emitter saturation
TJ = 125 °C
voltage
VGE = 15 V, IC = 15 A
TJ = 175 °C
VGE(th)
Max.
1200
VGE = 15 V, IC = 15 A
VCE(sat)
Typ.
2.6
2.4
V
2.5
5
6
7
V
VCE = 1200 V
25
µA
VGE = ± 20 V
± 250
nA
Table 5. Dynamic characteristics
Symbol
4/17
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0
VCC = 960 V, IC = 15 A,
VGE = 15 V, see Figure 23
Qge
Gate-emitter charge
Qgc
Gate-collector charge
DocID026013 Rev 5
Min.
Typ.
Max.
Unit
-
1300
-
pF
-
105
-
pF
-
32
-
pF
-
67
-
nC
-
8
-
nC
-
38
-
nC
STGW15H120F2, STGWA15H120F2
Electrical characteristics
Table 6. Switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Test conditions
Min.
Typ.
Max.
Unit
Turn-on delay time
-
23
-
ns
Current rise time
-
7.4
-
ns
-
1621
-
A/µs
111
-
ns
-
111
-
ns
Turn-on current slope
VCE = 600 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V,
see Figure 22
Turn-off delay time
Current fall time
Eon(1)
Turn-on switching loss
-
0.38
-
mJ
Eoff(2)
Turn-off switching loss
-
0.37
-
mJ
Ets
Total switching loss
-
0.75
-
mJ
td(on)
Turn-on delay time
-
23.5
-
ns
Current rise time
-
8
-
ns
Turn-on current slope
-
1525
-
A/µs
-
118
-
ns
-
253
-
ns
tr
(di/dt)on
td(off)
tf
1.
Parameter
VCE = 600 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 22
Turn-off delay time
Current fall time
Eon(1)
Turn-on switching loss
-
0.65
-
mJ
Eoff(2)
Turn-off switching loss
-
0.93
-
mJ
Ets
Total switching loss
-
1.58
-
mJ
tsc
Short-circuit withstand time
-
µs
VCE = 600 V, VGE = 15 V,
TJ = 150 °C,
5
Energy loss include reverse recovery of the external diode. The diode is the same of the co-packed
STGW15H120DF2
2. Turn-off loss include also the tail of the collector current.
DocID026013 Rev 5
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Electrical characteristics
2.1
STGW15H120F2, STGWA15H120F2
Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature
*,3*)65
3WRW
:
9*(97 -&
Figure 3. Collector current vs. case temperature
*,3*)65
,&
$
9*(97 -&
7&&
Figure 4. Output characteristics (TJ = 25°C)
,&
$
*,3*)65
9
9*( 9
7&&
Figure 5. Output characteristics (TJ = 175°C)
*,3*)65
,&
$
9*( 9
9
9
9
9
9
9
9
9&(9
Figure 6. VCE(sat) vs. junction temperature
*,3*)65
9&(VDW
9
,& $
9*( 9
9&(9
Figure 7. VCE(sat) vs. collector current
*,3*)65
9&(VDW
9
7- &
9*( 9
,& $
7- &
,& $
7- &
6/17
7-&
DocID026013 Rev 5
,&$
STGW15H120F2, STGWA15H120F2
Electrical characteristics
Figure 8. Collector current vs. switching
frequency
*,3*)65
,F>$@
7F &
Figure 9. Forward bias safe operating area
*,3*)65
,&
$
V
7F &
V
V
5HFWDQJXODUFXUUHQWVKDSH
GXW\F\FOH 9&& 95*
9*( 97- &
I>N+]@
Figure 10. Transfer characteristics
*,3*)65
,&
$
6LQJOHSXOVH
7F &7 -&
9*( 9
9&( 9
9&(9
*,3*)65
9*(WK
QRUP
7- &
,& $
9&( 9*(
7- &
Figure 11. Normalized VGE(th) vs junction
temperature
PV
Figure 12. Normalized V(BR)CES vs. junction
temperature
*,3*)65
9%5&(6
QRUP
9*(9
7-&
Figure 13. Capacitance variation
*,3*)65
&
S)
,& P$
&LHV
&RHV
&UHV
I 0+]9*(
7-&
DocID026013 Rev 5
9&(9
7/17
Electrical characteristics
STGW15H120F2, STGWA15H120F2
Figure 14. Gate charge vs. gate-emitter voltage
*,3*)65
9*(
9
,& $
,*( P$
9&& 9
Figure 15. Switching loss vs collector current
*,3*)65
(
-
9&& 99 *( 9
5* ȍ7- &
(2))
(21
Figure 16. Switching loss vs gate resistance
(
-
4JQ&
*,3*)65
9&& 99 *( 9
,& $7 - &
,&$
Figure 17. Switching loss vs temperature
*,3*)65
(
-
9&& 99 *( 9
5* ȍ,& $
(2))
(2))
(21
(21
Figure 18. Switching loss vs collector-emitter
voltage
(
-
5*ȍ
7-&
Figure 19. Switching times vs. gate resistance
*,3*)65
7- &9*( 9
5* ȍ,& $
*,3*)65
W
QV
7- &9*( 9
,& $9&& 9
WI
WGRII
WGRQ
(2))
WU
(21
8/17
9&(9
DocID026013 Rev 5
5*ȍ
STGW15H120F2, STGWA15H120F2
Electrical characteristics
Figure 20. Switching times vs. collector current
W
QV
*,3*)65
7- &9*( 9
5* ȍ9&& 9
WI
WGRII
WGRQ
WU
,&$
DocID026013 Rev 5
9/17
Electrical characteristics
STGW15H120F2, STGWA15H120F2
Figure 21. Thermal impedance
=WK727B%
.
=WK N5WKMF
WSW
6LQJOHSXOVH
WS
W
10/17
DocID026013 Rev 5
WS V
STGW15H120F2, STGWA15H120F2
3
Test circuits
Test circuits
Figure 22. Test circuit for inductive load
switching
Figure 23. Gate charge test circuit
$0Y
$0Y
Figure 24. Switching waveform
9*
9&(
7U9RII
7FURVV
,&
7GRQ
7RQ
7GRII
7U,RQ
7I
7RII
$0Y
DocID026013 Rev 5
11/17
Package information
4
STGW15H120F2, STGWA15H120F2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1
TO-247 package information
Figure 25. TO-247 package outline
0075325_H
12/17
DocID026013 Rev 5
STGW15H120F2, STGWA15H120F2
Package information
Table 7. TO-247 package mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
DocID026013 Rev 5
5.70
13/17
Package information
4.2
STGW15H120F2, STGWA15H120F2
TO-247 long leads package information
Figure 26. TO-247 long leads package outline
8463846_A_F
14/17
DocID026013 Rev 5
STGW15H120F2, STGWA15H120F2
Package information
Table 8. TO-247 long leads package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
b
1.16
1.26
b2
3.25
b3
2.25
c
0.59
0.66
D
20.90
21.00
21.10
E
15.70
15.80
15.90
E2
4.90
5.00
5.10
E3
2.40
2.50
2.60
e
5.34
5.44
5.54
L
19.80
19.92
20.10
L1
4.30
P
3.50
Q
5.60
S
6.05
3.60
3.70
6.00
6.15
DocID026013 Rev 5
6.25
15/17
Revision history
5
STGW15H120F2, STGWA15H120F2
Revision history
Table 9. Document revision history
16/17
Date
Revision
Changes
03-Mar-2014
1
Initial release.
08-Apr-2014
2
Document status promoted from preliminary to production data.
Added Section 2.1: Electrical characteristics (curves).
Minor text changes.
28-Jan-2015
3
updated 4.1: TO-247 package information and 4.2: TO-247 long
leads package information
Minor text changes
04-Mar-2015
4
Updated Figure 4.: Output characteristics (TJ = 25°C)
Minor text changes.
01-Apr-2015
5
Removed figure of Diode reverse recovery waveform
Minor text changes.
DocID026013 Rev 5
STGW15H120F2, STGWA15H120F2
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DocID026013 Rev 5
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