STI13NM60N

STF13NM60N, STI13NM60N STP13NM60N, STU13NM60N Datasheet N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFETs in a TO-220FP, I²PAK, TO-220 and IPAK packages Features TAB 1 2 3 1 TO-220FP 2 Order codes 3 STI13NM60N TAB STP13NM60N 3 1 TO-220 ID 600 V 360 mΩ 11 A STU13NM60N TAB 2 RDS(on) max. STF13NM60N I2PAK 1 VDS 2 3 IPAK • • • 100% avalanche tested Low input capacitance and gate charge Low gate input resistance D(2, TAB) Applications • Switching applications Description G(1) S(3) NG1D2TS3 These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest onresistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status link STF13NM60N STI13NM60N STP13NM60N STU13NM60N DS6112 - Rev 6 - October 2020 For further information contact your local STMicroelectronics sales office. www.st.com STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Parameter TO-220FP I²PAK, TO-220, IPAK Unit VDS Drain-source voltage 600 V VGS Gate-source voltage ±25 V Drain current (continuous) at TC = 25 °C 11(1) 11 Drain current (continuous) at TC = 100 °C 6.9(1) 6.9 IDM(2) Drain current pulsed 44(1) 44 A PTOT Total power dissipation at TC = 25 °C 25 90 W ID dv/dt(3) VISO TJ Tstg Peak diode recovery voltage slope A 15 Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) V/ns 2.5 Operating junction temperature range kV °C -55 to 150 Storage temperature range °C 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 11 A, di/dt ≤ 400 A/μs, VDD = 80% V(BR)DSS. Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-a Value TO-220FP I²PAK, TO-220 5 Thermal resistance junction-ambient IPAK °C/W 1.39 62.5 Unit 100 °C/W Table 3. Avalanche characteristics Symbol IAS EAS DS6112 - Rev 6 Parameter Avalanche current, repetitive or not repetitive (pulse width limited by TJ max) Single-pulse avalanche energy (starting TJ = 25 °C, ID = IAS, VDD = 50 V) Value Unit 3.5 A 200 mJ page 2/20 STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. VGS = 0 V, ID = 1 mA Typ. 600 Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 5.5 A VGS = 0 V, VDS = 600 V, TC = 125 °C Unit V VGS = 0 V, VDS = 600 V IDSS Max. 1 (1) 100 µA ±100 nA 3 4 V 280 360 mΩ Min. Typ. Max. Unit - 790 - pF - 60 - pF - 3.6 - pF - 135 - pF - 27 - nC - 4 - nC - 14 - nC - 4.7 - Ω 2 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Test conditions VDS = 50 V, f = 1 MHz, VGS = 0 V Reverse transfer capacitance (1) Coss eq. Equivalent output capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate input resistance VDS = 0 to 480 V, VGS = 0 V VDD = 480 V, ID = 11 A, VGS = 0 to 10 V (see Figure 17. Test circuit for gate charge behavior) f = 1 MHz, open drain 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS6112 - Rev 6 Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VDD = 300 V, ID = 5.5 A, - 3 - ns Rise time RG = 4.7 Ω, VGS = 10 V - 8 - ns Turn-off delay time (see Figure 16. Test circuit for resistive load switching times and Figure 21. Switching time waveform) - 30 - ns - 10 - ns Fall time page 3/20 STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N Electrical characteristics Table 7. Source-drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 11 A ISDM (1) Source-drain current (pulsed) - 44 A VSD (2) Forward on voltage VGS = 0 V, ISD = 11 A - 1.5 V trr Reverse recovery time ISD = 11 A, di/dt = 100 A/µs, - 230 ns Qrr Reverse recovery charge VDD = 100 V - 2 µC Reverse recovery current (see Figure 18. Test circuit for inductive load switching and diode recovery times) - 18 A trr Reverse recovery time ISD = 11 A, di/dt = 100 A/µs, - 290 ns Qrr Reverse recovery charge VDD = 100 V, TJ = 150 °C - 2.5 µC IRRM Reverse recovery current (see Figure 18. Test circuit for inductive load switching and diode recovery times) - 17 A IRRM 1. Pulse width is limited by safe operating area. 2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DS6112 - Rev 6 page 4/20 STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for I²PAK and TO-220 Figure 2. Thermal impedance for I²PAK and TO-220 AM03258v1 Figure 3. Safe operating area for TO-220FP AM03259v1 S( on D 1 10µs 10ms Tj=150°C Tc=25°C Single pulse 0.1 0.01 0.1 10 1 100 VDS(V) Figure 5. Safe operating area for IPAK AM03260v1 ID (A) 0.1 0.1 is 1 10-3 10-4 10-3 10-2 10-1 100 tp (s) Figure 6. Thermal impedance for IPAK GC20460 10µs ) 100 S( 1 10-2 K on Op Lim era ite tion d by in th m is ax ar RD ea 10 10-1 100µs 1ms DS6112 - Rev 6 GC20940 ) O p Li era m ite tion d by in t m his ax a R re a 10 K is ID (A) Figure 4. Thermal impedance for TO-220FP 100µs Tj=150°C Tc=25°C 1ms Single pulse 10ms 10 100 VDS(V) 10-1 10-2 10-5 10-4 10-3 10-2 10-1 tp (s) page 5/20 STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N Electrical characteristics (curves) Figure 7. Output characteristics ID (A) Figure 8. Transfer characteristics AM03300v1 6V 20 VDS=20V 20 16 16 12 12 5V 8 8 4 4 0 0 AM03301v1 ID (A) VGS=10V 4V 5 10 15 20 25 Figure 9. Normalized VDS vs temperature AM03258v1 VDS (norm) 0 0 VDS(V) 2 4 8 6 Figure 10. Static drain-source on-resistance AM03302v1 RDS(on) Ω ID = 1 mA 30 1.08 10 VGS(V) VGS=10V 8 1.04 1.00 0.96 0.92 -50 0 50 100 Figure 11. Gate charge vs gate-source voltage AM03305v1 VGS (V) VDS(V) 10 8 TJ (°C) Figure 12. Capacitance variations AM03304v1 C (pF) VDD=480V 12 500 ID=11A VDS 10 1000 Ciss 400 8 300 100 Coss 6 200 4 DS6112 - Rev 6 10 Crss 100 2 0 D 0 10 20 30 0 Qg(nC) 1 0.1 1 10 100 VDS(V) page 6/20 STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N Electrical characteristics (curves) Figure 13. Normalized gate threshold voltage vs temperature VGS(th) Figure 14. Normalized on resistance vs temperature RDS(on) AM03306v1 AM03307v1 (norm) 2.1 1.1 ID=250µA IDD=5.5A = 5.5 A 1.7 1.7 1.0 1.5 1.3 1.3 0.9 1.1 0.9 0.9 0.8 80 0.70 0.7 -50 0.7 0.5 0.5 -50 -25 TJ 0 0 25 50 75 100 TJ(°C) Figure 15. Source-drain diode forward characteristics VSD (V) AM09290v1 TJ=-50°C TJ=25°C 1.2 1.0 TJ=150°C 0.8 0.6 0.4 DS6112 - Rev 6 0 2 4 6 8 10 ISD(A) page 7/20 STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N Test circuits 3 Test circuits Figure 16. Test circuit for resistive load switching times Figure 17. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 18. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A VD 100 µH fast diode B B B 3.3 µF D G + Figure 19. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 21. Switching time waveform Figure 20. Unclamped inductive waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD 10% 0 ID VDD VGS AM01472v1 0 VDS 10% 90% 10% AM01473v1 DS6112 - Rev 6 page 8/20 STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-220FP package information Figure 22. TO-220FP package outline 7012510_Rev_13_B DS6112 - Rev 6 page 9/20 STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N TO-220FP package information Table 8. TO-220FP package mechanical data Dim. mm Min. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 E 0.45 0.70 F 0.75 1.00 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.20 G1 2.40 2.70 H 10.00 10.40 L2 DS6112 - Rev 6 Typ. 16.00 L3 28.60 30.60 L4 9.80 10.60 L5 2.90 3.60 L6 15.90 16.40 L7 9.00 9.30 Dia 3.00 3.20 page 10/20 STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N I²PAK package information 4.2 I²PAK package information Figure 23. I²PAK package outline 0004982_Rev_9 DS6112 - Rev 6 page 11/20 STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N I²PAK package information Table 9. I²PAK package mechanical data Dim. DS6112 - Rev 6 mm Min. Typ. Max. A 4.40 - 4.60 A1 2.40 - 2.72 b 0.61 - 0.88 b1 1.14 - 1.70 c 0.49 - 0.70 c2 1.23 - 1.32 D 8.95 - 9.35 e 2.40 - 2.70 e1 4.95 - 5.15 E 10.00 - 10.40 L 13.00 - 14.00 L1 3.50 - 3.93 L2 1.27 - 1.40 page 12/20 STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N TO-220 type A package information 4.3 TO-220 type A package information Figure 24. TO-220 type A package outline 0015988_typeA_Rev_23 DS6112 - Rev 6 page 13/20 STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N TO-220 type A package information Table 10. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 Slug flatness DS6112 - Rev 6 Typ. 0.03 0.10 page 14/20 STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N IPAK (TO-251) type A package information 4.4 IPAK (TO-251) type A package information Figure 25. IPAK (TO-251) type A package outline 0068771_IK_typeA_rev15 DS6112 - Rev 6 page 15/20 STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N IPAK (TO-251) type A package information Table 11. IPAK (TO-251) type A package mechanical data Dim. mm Min. Typ. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H DS6112 - Rev 6 Max. 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° 1.00 page 16/20 STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N Ordering information 5 Ordering information Table 12. Order codes Order codes Marking STF13NM60N STI13NM60N STP13NM60N STU13NM60N DS6112 - Rev 6 Package Packing TO-220FP 13NM60N I²PAK TO-220 Tube IPAK page 17/20 STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N Revision history Table 13. Document revision history Date Revision 29-Feb-2009 1 13-Jan-2010 2 08-Nov-2010 3 18-Jan-2012 4 14-Nov-2012 5 Changes First release – Added new package, mechanical data: TO-247 – Added new package, mechanical data: D²PAK – Modified Figure 4 – Added new package, mechanical data: I²PAK – Added new package, mechanical data: IPAK – Minor text changes The part numbers STB13NM60N and STD13NM60N have been moved to a separate datasheet. Section 4: Package mechanical data has been updated. The part number STW13NM60N have been moved to a separate datasheet and the document has been updated accordingly. Updated cover page. Updated Section 1 Electrical ratings. 26-Oct-2020 6 Updated Table 4. Static and Table 7. Source-drain diode. Updated Section 4 Package information. Added Section 5 Ordering information. Minor text changes. DS6112 - Rev 6 page 18/20 STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 5 4.1 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 I²PAK package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.3 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.4 IPAK (TO-251) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 DS6112 - Rev 6 page 19/20 STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS6112 - Rev 6 page 20/20