STI26NM60N

STB26NM60N, STF26NM60N, STI26NM60N STP26NM60N, STW26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages Datasheet — production data Features Type VDSS RDS(on) max ID STB26NM60N 600 V < 0.165 Ω 20 A STF26NM60N 600 V < 0.165 Ω 20 A STI26NM60N 600 V < 0.165 Ω 20 A STP26NM60N 600 V < 0.165 Ω 20 A STW26NM60N 600 V < 0.165 Ω 20 A 2 TO-220FP 3 3 12 3 1 I²PAK 2 1 TO-220 TAB 3 ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 2 1 Figure 1. 3 1 D²PAK Application ■ TAB TAB TO-247 Internal schematic diagram Switching applications $4!" Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making it suitable for the most demanding high-efficiency converters. ' 3 3# Table 1. Device summary Order codes Package Packaging STB26NM60N D²PAK Tape and reel STF26NM60N TO-220FP STI26NM60N Marking 26NM60N I²PAK Tube STP26NM60N TO-220 STW26NM60N TO-247 June 2012 This is information on a product in full production. Doc ID 15642 Rev 5 1/23 www.st.com 23 Contents STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2/23 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Doc ID 15642 Rev 5 STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter D²PAK, I²PAK, TO-220, TO-247 VDS Drain-source voltage 600 VGS Gate-source voltage ± 25 Unit TO-220FP V V (1) ID Drain current (continuous) at TC = 25 °C 20 ID Drain current (continuous) at TC = 100 °C 12.6 12.6 (1) A Drain current (pulsed) 80 80(1) A Total dissipation at TC = 25 °C 140 35 W Derating factor 1.12 0.28 W/°C IDM (2) PTOT dv/dt (3) Peak diode recovery voltage slope A 15 VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Tstg Storage temperature Tj 20 V/ns 2500 Max. operating junction temperature V –55 to 150 °C 150 °C 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 20 A, di/dt ≤ 400 A/µs, VDSpeak ≤V(BR)DSS, VDD = 80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit TO-247 TO-220 I²PAK D²PAK TO-220FP Rthj-case Thermal resistance junctioncase max Rthj-amb Thermal resistance junctionambient max Rthj-pcb(1) 50 Thermal resistance junction-pcb max 0.89 3.6 °C/W 62.5 62.5 °C/W 30 °C/W 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec. Doc ID 15642 Rev 5 3/23 Electrical ratings Table 4. Symbol 4/23 STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Avalanche characteristics Parameter IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) EAS Single pulse avalanche energy (starting TJ=25 °C, ID=IAS, VDD=50 V) Doc ID 15642 Rev 5 Value Unit 6 A 610 mJ STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 600 V VDS = 600 V, TC = 125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 25 V ±0.1 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 10 A V(BR)DSS Table 6. Symbol Ciss Coss Crss Coss eq. (1) Qg Qgs Qgd Rg 600 2 V 3 0.135 0.165 Ω Dynamic Parameter Test conditions Min. Typ. Max. Unit - pF pF pF Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 1800 115 1.1 Equivalent output capacitance VGS = 0, VDS = 0 to 480 V - 310 - pF Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 20 A, VGS = 10 V, (see Figure 19) - 60 8.5 30 - nC nC nC Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level = 20 mV open drain - 2.8 - Ω 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 10 A RG = 4.7 Ω VGS = 10 V (see Figure 18) Doc ID 15642 Rev 5 Min. Typ. - 13 25 85 50 Max. Unit - ns ns ns ns 5/23 Electrical characteristics STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Table 8. Symbol Source drain diode Parameter Test conditions Typ. Max Unit - 20 80 A A 1.5 V ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 20 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20 A, di/dt = 100 A/µs VDD = 60 V (see Figure 20) - 370 5.8 31.6 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 20) - 450 7.5 32.5 ns µC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 6/23 Min. Doc ID 15642 Rev 5 STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D²PAK and I²PAK Figure 3. Thermal impedance for TO-220, D²PAK and I²PAK Figure 5. Thermal impedance for TO-220FP Figure 7. Thermal impedance for TO-247 AM03314v1 ID (A) Op Lim era ite tion d b in y m this ax ar R e DS (o n) ai s 1µs 10 10µs 100µs 1ms 1 10ms Tj=150°C Tc=25°C Sinlge pulse 0.1 0.1 10 1 Figure 4. 100 VDS(V) Safe operating area for TO-220FP AM03315v1 ) on S( O 100µs Li 1 10µs m 10 pe ra ite tion d by in t m his ax a RD rea is ID (A) 1ms 10ms Tj=150°C Tc=25°C 0.1 Sinlge pulse 0.01 0.1 Figure 6. 10 1 100 VDS(V) Safe operating area for TO-247 AM03316v1 n) (o DS 10 Op Lim era ite tion d by in th m is ax a r R ea is ID (A) 1 10µs 100µs 1ms Tj=150°C Tc=25°C 0.1 10ms Sinlge pulse 0.01 0.1 1 10 100 VDS(V) Doc ID 15642 Rev 5 7/23 Electrical characteristics STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Figure 8. Output characteristics Figure 9. Figure 10. Transconductance Figure 11. Static drain-source on-resistance AM03318v1 GFS (S) Transfer characteristics TJ=-50°C AM03317v1 RDS(on) (Ω) 0.16 VGS=10V 8.5 TJ=25°C 0.15 6.5 0.14 TJ=150°C 0.13 4.5 0.12 2.5 0.11 0.5 0 15 10 5 20 0.1 ID(A) 0 10 5 15 20 ID(A) Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations AM03320v1 VGS (V) VDD=480V 12 ID=20A AM03319v1 C (pF) 10000 10 Ciss 1000 8 6 100 Coss 4 10 Crss 2 0 0 8/23 10 20 30 40 50 60 Qg(nC) Doc ID 15642 Rev 5 1 0.1 1 10 100 VDS(V) STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature AM03321v1 VGS(th) (norm) 1.1 Figure 15. Normalized on resistance vs temperature AM03322v1 RDS(on) (norm) 2.1 ID = 250 µA VGS = 10 V 1.0 1.7 0.9 1.3 0.8 0.9 0.7 -50 -25 0 25 50 75 100 TJ(°C) Figure 16. Source-drain diode forward characteristics 0 25 50 75 100 TJ(°C) Figure 17. Normalized BVDSS vs temperature AM03324v1 VSD (V) 0.5 -50 -25 AM09028v1 VDS (norm) TJ=-50°C ID=1mA 1.10 1.08 1.2 1.06 TJ=25°C 1.0 1.04 1.02 0.8 TJ=150°C 1.00 0.98 0.6 0.96 0.4 0 0.94 0.92 -50 -25 5 10 15 ISD(A) Doc ID 15642 Rev 5 0 25 50 75 100 TJ(°C) 9/23 Test circuits 3 STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 22. Unclamped inductive waveform AM01471v1 Figure 23. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 10/23 0 Doc ID 15642 Rev 5 10% AM01473v1 STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 15642 Rev 5 11/23 Package mechanical data STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Table 9. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 12/23 Max. 0.4 0° 8° Doc ID 15642 Rev 5 STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Package mechanical data Figure 24. D²PAK (TO-263) drawing 0079457_T Figure 25. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters Doc ID 15642 Rev 5 13/23 Package mechanical data STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Table 10. I²PAK (TO-262) mechanical data mm. DIM. min. 14/23 typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 Doc ID 15642 Rev 5 STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Package mechanical data Figure 26. I²PAK (TO-262) drawing 0004982_Rev_H Doc ID 15642 Rev 5 15/23 Package mechanical data STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 16/23 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 15642 Rev 5 STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Package mechanical data Figure 27. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 15642 Rev 5 17/23 Package mechanical data STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Table 12. TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 18/23 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 15642 Rev 5 STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Package mechanical data Figure 28. TO-220FP drawing 7012510_Rev_K_B Doc ID 15642 Rev 5 19/23 Packaging mechanical data 5 STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, Packaging mechanical data Table 13. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. 20/23 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Doc ID 15642 Rev 5 Min. Max. 330 13.2 26.4 30.4 STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Packaging mechanical Figure 29. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 30. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID 15642 Rev 5 21/23 Revision history 6 STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Revision history Table 14. 22/23 Document revision history Date Revision Changes 29-Apr-2009 1 First release 17-Dec-2009 2 Added new package, mechanical data: D²PAK 20-Jun-2011 3 Inserted device in I2PAK. 13-Mar-2012 4 Updated PTOT and derating factor in Table 2. Update Rthj-case for TO-220FP in Table 3. Update Figure 12 and Figure 17. Update Section 5: Packaging mechanical data. 20-Jun-2012 5 Updated title on the coverpage. Minor text changes. Doc ID 15642 Rev 5 STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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