STI33N60M2

STF33N60M2, STI33N60M2 STP33N60M2, STW33N60M2 Datasheet N-channel 600 V, 0.108 Ω typ., 26 A, MDmesh M2 Power MOSFETs in TO‑220FP, I2PAK, TO-220 and TO-247 packages Features TAB Order codes 1 2 23 1 3 TO-220FP VDS @ TJmax RDS(on) max. STF33N60M2 STI33N60M2 I2PAK TAB STP33N60M2 2 3 TO-220 TO-247 D ( 2 , TAB ) Package TO-220FP 650 V 0.125 Ω STW33N60M2 1 ID • • Extremely low gate charge Excellent output capacitance (COSS) profile • • 100% avalanche tested Zener-protected 26 A I²PAK TO-220 TO-247 Applications G( 1) • • S(3) AM15572V1 Switching applications LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status links STF33N60M2 STI33N60M2 STP33N60M2 STW33N60M2 DS9497 - Rev 3 - June 2019 For further information contact your local STMicroelectronics sales office. www.st.com STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol VGS Parameter I2PAK, TO-220, TO-247 TO-220FP Gate-source voltage ±25 Unit V Drain current (continuous) at TC = 25 °C 26(1) 26 A Drain current (continuous) at TC = 100 °C 16(1) 16 A IDM(2) Drain current (pulsed) 104(1) 104 A PTOT Total power dissipation at TC = 25 °C 35 190 W ID dv/dt(3) Peak diode recovery voltage slope 15 V/ns dv/dt(4) MOSFET dv/dt ruggedness 50 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) Tstg Storage temperature range Tj 2500 V -50 to 150 Operating junction temperature range °C 1. Limited by maximum junction temperature. 2. Pulse width is limited by safe operating area. 3. ISD ≤ 26 A, di/dt ≤ 400 A/µs, VDS peak < V(BR)DSS, VDD = 400 V 4. VDS ≤ 480 V Table 2. Thermal data Value Symbol Parameter I2PAK TO-220FP Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient TO-247 TO-220 3.6 0.66 62.5 Unit °C/W 50 °C/W Value Unit 5 A 450 mJ Table 3. Avalanche characteristics Symbol DS9497 - Rev 3 Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) page 2/20 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified). Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 V Min. Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 1 µA IDSS Zero gate voltage drain current VGS = 0 V, VDS = 600 V, TC = 125 °C(1) 100 µA IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 13 A 0.108 0.125 Ω Min. Typ. Max. Unit - 1781 - pF - 85 - pF - 2.5 - pF 2 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 135 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 V - 5.2 - Ω Qg Total gate charge VDD = 480 V, ID = 26 A, - 45.5 - nC Qgs Gate-source charge VGS = 0 to 10 V - 9.9 - nC Qgd Gate-drain charge (see Figure 19. Test circuit for gate charge behavior) - 18.5 - nC VDS = 100 V, f = 1 MHz, VGS = 0 V 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS9497 - Rev 3 Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VDD = 300 V, ID = 13 A, - 16 - ns Rise time RG = 4.7 Ω, VGS = 10 V - 9.6 - ns Turn-off delay time (see Figure 18. Test circuit for resistive load switching times and Figure 23. Switching time waveform) - 109 - ns - 9 - ns Fall time page 3/20 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Electrical characteristics Table 7. Source drain diode Symbol ISD ISDM(1) (2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 26 A Source-drain current (pulsed) - 104 A 1.6 V Forward on voltage ISD = 26 A, VGS = 0 V - trr Reverse recovery time ISD = 26 A, di/dt = 100 A/µs - 375 ns Qrr Reverse recovery charge VDD = 60 V - 5.6 µC Reverse recovery current (see Figure 20. Test circuit for inductive load switching and diode recovery times) - 30 A trr Reverse recovery time ISD = 26 A, di/dt = 100 A/µs - 478 ns Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C - 7.7 µC IRRM Reverse recovery current (see Figure 20. Test circuit for inductive load switching and diode recovery times) - 35.5 A VSD IRRM 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. DS9497 - Rev 3 page 4/20 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220FP AM17917v1 ID (A) Figure 2. Thermal impedance for TO-220FP GC20521 K δ=0.5 100 0.2 ea is a r on) is DS ( in a x R io n y m at er d b O p m ite Li 10-1 th 10 1 0.1 10µs 0.05 0.02 0.01 100µs 1ms 10ms 0.1 10-2 Zth= K*R thJ-c δ =t p/Ƭ Single pulse Tj=150°C Tc=25°C S ingle puls e 0.01 0.1 10 1 100 10-3 10-4 VDS (V) Figure 3. Safe operating area for I2PAK and TO-220 tp 10 -3 10 -2 10 -1 Ƭ 10-0 tp(s) Figure 4. Thermal impedance for I2PAK and TO-220 AM17906v1 ID (A) ) on D S( O Li p e r m at ite io d ni by n m th is ax a R re a is 100 10 10µs 100µs 1ms 10ms 1 Tj=150°C Tc=25°C S ingle puls e 0.1 0.1 10 1 100 VDS (V) Figure 5. Safe operating area for TO-247 Figure 6. Thermal impedance for TO-247 AM17918v1 ID (A) ) on D S( O Li p e r m at ite io d ni by n m th is ax a R re a is 100 10 10µs 100µs 1ms 10ms 1 Tj=150°C Tc=25°C S ingle puls e 0.1 0.1 DS9497 - Rev 3 1 10 100 VDS (V) page 5/20 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Electrical characteristics (curves) Figure 7. Output characteristics Figure 8. Transfer characteristics AM17907v1 ID (A) VGS =7, 8, 9, 10V 6V 60 AM17908v1 ID (A) VDS =17V 60 50 50 40 40 5V 30 30 20 20 10 0 10 4V 10 5 0 20 15 VDS (V) Figure 9. Gate charge vs gate-source voltage AM17909v1 VDS VGS (V) VDD=480V ID=26A 12 0 2 0 4 6 8 10 VGS (V) Figure 10. Static drain-source on-resistance (V) R DS (on) (Ω ) 500 0.114 400 0.112 300 0.110 200 0.108 100 0.106 AM17910v1 VGS =10V VDS 10 8 6 4 2 0 0 10 20 30 50 40 0 Q g (nC) 0.104 0 10 5 15 25 ID(A) 20 Figure 12. Normalized gate threshold voltage vs temperature Figure 11. Capacitance variations AM17911v1 C (pF) AM17913v1 VGS (th) (norm) ID=250µA 10000 1.1 Cis s 1000 1.0 100 Cos s 10 0.9 0.8 Crs s 1 0.1 DS9497 - Rev 3 1 10 100 VDS (V) 0.7 -50 -25 0 25 50 75 100 TJ (°C) page 6/20 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Electrical characteristics (curves) Figure 13. Normalized on-resistance vs temperature Figure 14. Source-drain diode forward characteristics AM17914v1 R DS (on) AM17916v1 VS D (norm) ID=13A VDS =10V 2.3 2.1 TJ =-50°C 1.9 1.7 1.5 TJ 1.3 TJ =150°C 1.1 0.9 0.7 0.5 -50 -25 0 25 50 0 TJ (°C) 75 100 Figure 15. Normalized V(BR)DSS vs temperature Figure 16. Output capacitance stored energy AM17915v1 V(BR)DSS (norm.) AM17912v1 E os s (µJ ) ID=1mA 1.09 IS D 4 12 1.07 10 1.05 8 1.03 1.01 6 0.99 4 0.97 0.95 0.93 0.91 -50 2 -25 0 25 50 75 100 0 0 TJ (°C) 100 200 300 400 500 600 VDS (V) Figure 17. Maximum avalanche energy vs temperature EAS (mJ) GADG070220191439EAS 400 300 ID = 5 A, VDD = 50 V 200 100 0 -75 DS9497 - Rev 3 -25 25 75 125 TJ (°C) page 7/20 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Test circuits 3 Test circuits Figure 18. Test circuit for resistive load switching times Figure 19. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 20. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 21. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 23. Switching time waveform Figure 22. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS9497 - Rev 3 page 8/20 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-220FP package information Figure 24. TO-220FP package outline 7012510_Rev_13_B DS9497 - Rev 3 page 9/20 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 TO-220FP package information Table 8. TO-220FP package mechanical data Dim. mm Min. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 E 0.45 0.70 F 0.75 1.00 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.20 G1 2.40 2.70 H 10.00 10.40 L2 DS9497 - Rev 3 Typ. 16.00 L3 28.60 30.60 L4 9.80 10.60 L5 2.90 3.60 L6 15.90 16.40 L7 9.00 9.30 Dia 3.00 3.20 page 10/20 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 I²PAK package information 4.2 I²PAK package information Figure 25. I²PAK package outline 0004982_Rev_H DS9497 - Rev 3 page 11/20 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 I²PAK package information Table 9. I²PAK package mechanical data Dim. DS9497 - Rev 3 mm Min. Typ. Max. A 4.40 - 4.60 A1 2.40 - 2.72 b 0.61 - 0.88 b1 1.14 - 1.70 c 0.49 - 0.70 c2 1.23 - 1.32 D 8.95 - 9.35 e 2.40 - 2.70 e1 4.95 - 5.15 E 10 - 10.40 L 13 - 14 L1 3.50 - 3.93 L2 1.27 - 1.40 page 12/20 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 TO-220 type A package information 4.3 TO-220 type A package information Figure 26. TO-220 type A package outline 0015988_typeA_Rev_22 DS9497 - Rev 3 page 13/20 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 TO-220 type A package information Table 10. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 DS9497 - Rev 3 Typ. 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 page 14/20 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 TO-247 package information 4.4 TO-247 package information Figure 27. TO-247 package outline 0075325_9 DS9497 - Rev 3 page 15/20 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 TO-247 package information Table 11. TO-247 package mechanical data Dim. mm Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 DS9497 - Rev 3 Typ. 5.45 5.60 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 5.50 5.70 page 16/20 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Ordering information 5 Ordering information Table 12. Order codes Order code Marking STF33N60M2 STI33N60M2 STP33N60M2 STW33N60M2 DS9497 - Rev 3 Package Packing TO-220FP 33N60M2 I2PAK TO-220 Tube TO-247 page 17/20 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Revision history Table 13. Document revision history Date Version 13-Sep-2013 1 Changes First release. Modified: RDS(on) and ID values in cover page Modified: values in Table 4 19-Nov-2013 2 Modified: RDS(on) typical and maximum values in Table 5, the entire typical values in Table 6, 7 and 8 Added: Section 2.1: Electrical characteristics (curves) Minor text changes Removed maturity status indication from cover page. Updated title, features and description. 14-Jun-2019 3 Updated Table 3. Avalanche characteristics. Added Figure 17. Maximum avalanche energy vs temperature. Minor text changes DS9497 - Rev 3 page 18/20 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 5 4.1 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 I²PAK package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.3 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.4 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 DS9497 - Rev 3 page 19/20 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS9497 - Rev 3 page 20/20