STL7N6F7
N-channel 60 V, 21 mΩ typ., 7 A STripFET™ F7
Power MOSFET in a PowerFLAT™ 2x2 package
Datasheet - production data
Features
1
2
3
6
1
5
2
4
3
PowerFLAT™ 2x2
Figure 1: Internal schematic diagram
2(D)
3(G)
D
6(D)
RDS(on) max
ID
STL7N6F7
60 V
25 mΩ
7A
Among the lowest RDS(on) on the market
Excellent FoM (figure of merit)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low onstate resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
S
5(D)
VDS
Applications
1(D)
Order code
4(S)
Bottom view
AM11269v1
Table 1: Device summary
Order code
Marking
Package
Packing
STL7N6F7
ST7N
PowerFLAT™ 2x2
Tape and reel
April 2017
DocID028257 Rev 3
This is information on a product in full production.
1/13
www.st.com
Contents
STL7N6F7
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ..................................................................................... 8
4
Package information ....................................................................... 9
4.1
5
2/13
PowerFLAT 2x2 package information ............................................. 10
Revision history ............................................................................ 12
DocID028257 Rev 3
STL7N6F7
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
60
V
VGS
Gate-source voltage
± 20
V
ID
Drain current (continuous) at Tpcb = 25 °C
7
A
ID
Drain current (continuous) at Tpcb = 100 °C
4.5
A
IDM(1)
Drain current (pulsed)
28
A
PTOT
Total dissipation at Tpcb = 25 °C
2.4
W
-55 to 150
°C
TJ
Operating junction temperature range
Tstg
Storage temperature range
Notes:
(1)Pulse
width limited by safe operating area.
Table 3: Thermal data
Symbol
Rthj-pcb
(1)
Parameter
Thermal resistance junction-pcb
Value
Unit
52
°C/W
Notes:
(1)When
mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 s.
DocID028257 Rev 3
3/13
Electrical characteristics
2
STL7N6F7
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4: On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0 V
IDSS
Zero gate voltage
drain current
VGS = 0 V , VDS = 60 V
1
µA
IGSS
Gate-body leakage
current
VGS = 20 V, VDS = 0 V
100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 μA
4
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 3.5A
21
25
mΩ
Min.
Typ.
Max.
Unit
-
420
-
pF
-
215
-
pF
-
16
-
pF
-
8
-
nC
-
2.3
-
nC
V(BR)DSS
60
V
2
Table 5: Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Test conditions
VDS = 30 V, f = 1 MHz,
VGS = 0 V
VDD = 30 V, ID= 7 A
VGS = 0 to 10 V
(see Figure 14: "Test circuit
for gate charge behavior")
-
2.1
-
nC
Min.
Typ.
Max.
Unit
-
7.85
-
ns
-
3.25
-
ns
-
12.1
-
ns
-
3.95
-
ns
Table 6: Switching times
Symbol
td(on)
tr
td(off)
tf
4/13
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 30 V, ID = 3.5A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 13: "Test circuit
for resistive load switching
times" and Figure 18:
"Switching time waveform")
DocID028257 Rev 3
STL7N6F7
Electrical characteristics
Table 7: Source-drain diode
Symbol
VSD(1)
Parameter
Test conditions
Min.
Typ.
Max.
Unit
1.2
V
Forward on voltage
ISD = 7 A, VGS = 0 V
-
trr
Reverse recovery time
-
17.1
ns
Qrr
Reverse recovery charge
-
6.67
nC
IRRM
Reverse recovery current
ID = 7 A, di/dt = 100 A/µs
VDD = 48 V
(see Figure 15: "Test circuit
for inductive load switching
and diode recovery times"
-
0.8
A
Notes:
(1)Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
DocID028257 Rev 3
5/13
Electrical characteristics
2.1
STL7N6F7
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
6/13
DocID028257 Rev 3
STL7N6F7
Electrical characteristics
Figure 8: Capacitance variations
Figure 9: Normalized gate threshold voltage vs
temperature
Figure 10: Normalized on-resistance vs temperature
Figure 11: Normalized V(BR)DSS vs temperature
Figure 12: Source-drain diode forward characteristics
DocID028257 Rev 3
7/13
Test circuits
3
8/13
STL7N6F7
Test circuits
Figure 13: Test circuit for resistive load
switching times
Figure 14: Test circuit for gate charge
behavior
Figure 15: Test circuit for inductive load
switching and diode recovery times
Figure 16: Unclamped inductive load test
circuit
Figure 17: Unclamped inductive waveform
Figure 18: Switching time waveform
DocID028257 Rev 3
STL7N6F7
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
DocID028257 Rev 3
9/13
Package information
4.1
STL7N6F7
PowerFLAT 2x2 package information
Figure 19: PowerFLAT™ 2x2 package outline
8368575_REV_4
10/13
DocID028257 Rev 3
STL7N6F7
Package information
Table 8: PowerFLAT™ 2x2 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
0.70
0.75
0.80
A1
0.00
0.02
0.05
A3
0.20
b
0.25
0.30
0.35
D
1.90
2.00
2.10
E
1.90
2.00
2.10
D2
0.90
1.00
1.10
E2
0.80
0.90
1.00
e
0.55
0.65
0.75
K
0.15
0.25
0.35
K1
0.20
0.30
0.40
K2
0.25
0.35
0.45
L
0.20
0.25
0.30
L1
0.65
0.75
0.85
Figure 20: PowerFLAT™ 2x2 recommended footprint (dimensions are in mm)
Footprint
DocID028257 Rev 3
11/13
Revision history
5
STL7N6F7
Revision history
Table 9: Document revision history
Date
Revision
27-Aug-2015
1
First release.
22-Oct-2015
2
Updated title and features in cover page Updated Table 4: "On /off
states", Table 5: "Dynamic" and Table 6: "Switching times".
Added Section 4.1: "Electrical characteristics (curves)"
3
Modified title and features table on cover page
Modified Table 4: "On /off states"
Modified Figure 4: "Output characteristics", Figure 5: "Transfer
characteristics", Figure 7: "Static drain-source on-resistance" and
Figure 12: "Source-drain diode forward characteristics"
Minor text changes.
03-Apr-2017
12/13
Changes
DocID028257 Rev 3
STL7N6F7
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DocID028257 Rev 3
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