STP11NM60N

STD11NM60N-1 - STB11NM60N-1 STD11NM60N-STP11NM60N-STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh™ Power MOSFET Features Type STB11NM60N-1 STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N VDSS (@TJmax) 650 V 650 V 650 V 650 V 650 V RDS(on) < 0.45 Ω < 0.45 Ω < 0.45 Ω < 0.45 Ω < 0.45 Ω ID 1 2 3 3 2 1 10 A 10 A 10 A 10 A(1) 10 A TO-220 3 1 IPAK DPAK 3 1. Limited only by maximum temperature allowed ■ ■ ■ 3 12 1 2 100% avalanche tested Low input capacitance and gate charge Low gate input resistance I²PAK TO-220FP Figure 1. Internal schematic diagram Application ■ Switching applications Description This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Marking B11NM60N D11NM60N D11NM60N P11NM60N F11NM60N Package I²PAK IPAK DPAK TO-220 TO-220FP Packaging Tube Tube Tape & reel Tube Tube Order codes STB11NM60N-1 STD11NM60N-1 STD11NM60N STP11NM60N STF11NM60N October 2007 Rev 3 1/18 www.st.com 18 Contents STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/18 STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220/I²PAK DPAK/IPAK VDS VGS ID ID IDM (2) PTOT Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor dv/dt (3) VISO TJ Tstg Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s;TC = 25 °C) Operating junction temperature Storage temperature --55 to 150 10 6.3 40 90 0.8 15 2500 600 ± 25 10(1) 6.3 (1) 40(1) 25 0.2 Unit TO-220FP V V A A A W W/°C V/ns V °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤10A, di/dt ≤400A/µs, VDD =80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter TO-220 / I²PAK DPAK / IPAK Unit TO-220FP 5 °C/W °C/W °C Rthj-case Rthj-amb Tl Thermal resistance junction-case max Thermal resistance junction-amb max Maximum lead temperature for soldering purposes 1.38 62.5 300 Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) Single pulse avalanche energy (starting TJ = 25 °C, ID = IAS, VDD = 50 V) Max value 3.5 200 Unit A mJ 3/18 Electrical characteristics STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS dv/dt(1) On/off states Parameter Drain-source breakdown voltage Drain-source voltage slope Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS= 0 VDD = 400 V,ID = 5 A, VGS =10 V VDS = Max rating, VDS=Max rating,Tc=125°C VGS = ±20 V VDS= VGS, ID = 250 µA VGS= 10 V, ID= 5 A 2 3 0.37 Min. 600 45 1 10 ±100 Typ. Max. Unit V V/ns µA µA nA V Ω IDSS IGSS VGS(th) RDS(on) 1. 4 0.45 Characteristic value at turn off on inductive load Table 6. Symbol gfs(1) Ciss Coss Crss Coss eq.(2) Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Gate input resistance Test conditions VDS =15 V, ID= 5 A Min. Typ. 7.5 850 44 5 130 Max. Unit S pF pF pF pF VDS =50V, f=1MHz, VGS=0 VGS=0, VDS =0 V to 480 V f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain VDD=480 V, ID = 10 A VGS =10 V (see Figure 19) Rg 3.7 Ω nC nC nC Qg Qgs Qgd 1. Total gate charge Gate-source charge Gate-drain charge 31 4.2 15.9 Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/18 STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) (see Figure 23) Min. Typ. 22 18.5 50 12 Max. Unit ns ns ns ns Table 8. Symbol ISD ISDM VSD(1) trr Qrr IRRM trr Qrr IRRM 1. Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 10 A, VGS=0 ISD =10 A, di/dt =100 A/µs, VDD =100 V, TJ = 25 °C (see Figure 20) VDD =100 V di/dt =100 A/µs, ISD = 10 A TJ = 150 °C (see Figure 20) 340 3.26 19.2 460 4.42 19.2 Test conditions Min. Typ. Max. Unit 10 40 1.3 A A V ns µC A ns µC A Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/18 Electrical characteristics STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220 / I²PAK Figure 3. Thermal impedance for TO-220 / I²PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for DPAK / IPAK Figure 7. Thermal impedance for DPAK / IPAK 6/18 STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N Figure 8. Output characteristics Figure 9. Electrical characteristics Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 7/18 Electrical characteristics STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N Figure 15. Normalized on resistance vs temperature Figure 14. Normalized gate threshold voltage vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature 8/18 STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N Test circuit 3 Test circuit Figure 19. Gate charge test circuit Figure 18. Switching times test circuit for resistive load Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform 9/18 Package mechanical data STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/18 STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N Package mechanical data TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 11/18 Package mechanical data STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N TO-220FP mechanical data mm. Min. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 Typ. Max. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 Min. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch Typ. Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø A B L3 L6 L7 F1 F D G1 E H F2 L2 L5 123 L4 12/18 G STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N Package mechanical data TO-251 (IPAK) mechanical data DIM. Min. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm Typ. Max. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 Min. 0.086 0.035 0.027 0.025 0.204 inch Typ. Max. 0.094 0.043 0.051 0.031 0.212 0.033 H C A C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 0068771-E 13/18 Package mechanical data STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N DPAK mechanical data mm. DIM. Min. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 5.1 6.4 4.7 2.28 4.4 9.35 1 2.8 0.8 0.6 0.2 0˚ 8˚ 0˚ 1 0.023 0.008 8˚ 4.6 10.1 0.173 0.368 0.039 0.110 0.031 0.039 6.6 0.252 0.185 0.090 0.181 0.397 Typ. Max. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 Min. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.200 0.260 Typ. Max. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 inch 0068772-F 14/18 STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N Package mechanical data TO-262 (I2PAK) mechanical data mm. DIM. Min. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Typ. Max. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 Min. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Typ. Max. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch 15/18 Packaging mechanical data STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 16/18 STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N Revision history 6 Revision history Table 9. Date 03-Aug-2006 14-Nov-2006 02-Oct-2007 Document revision history Revision 1 2 3 First release Complete version Figure 8.: Output characteristics has been updated. Added new package (I²PAK) Changes 17/18 STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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