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STP18NM60N

STP18NM60N

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT78

  • 描述:

    MOSFET N-CH 600V 13A TO-220

  • 数据手册
  • 价格&库存
STP18NM60N 数据手册
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 Datasheet — production data Features TAB Order codes VDSS (@Tjmax) RDS(on) max. PTOT ID 3 STB18NM60N STF18NM60N STP18NM60N 1 110 W 650 V D²PAK 30 W < 0.285 Ω 13 A 3 1 2 TO-220FP TAB 110 STW18NM60N ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 3 1 2 2 3 1 TO-220 TO-247 Applications ■ Figure 1. Switching applications Internal schematic diagram Description $ 4!" These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging STB18NM60N 18NM60N D²PAK Tape and reel STF18NM60N 18NM60N TO-220FP Tube STP18NM60N 18NM60N TO-220 Tube STW18NM60N 18NM60N TO-247 Tube October 2012 This is information on a product in full production. Doc ID 15868 Rev 4 1/21 www.st.com 21 Contents STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 ............................................... 9 Doc ID 15868 Rev 4 STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter D²PAK, TO-220,TO-247 VDS Drain-source voltage 600 VGS Gate- source voltage ± 25 Unit TO-220FP V ID Drain current (continuous) at TC = 25 °C 13 13 (1) A ID Drain current (continuous) at TC = 100 °C 8.2 8.2 (1) A Drain current (pulsed) 52 (1) A Total dissipation at TC = 25 °C 110 IDM (2) PTOT 52 30 W IAR Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) 4.5 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 350 mJ Peak diode recovery voltage slope 15 V/ns dv/dt(3) VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) TJ Tstg Operating junction temperature Storage temperature 2500 -55 to 150 V °C 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 13 A, di/dt ≤400 A/µs, VDD ≤80 % V(BR)DSS, VDS(peak) ≤V(BR)DSS Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max 1.14 Rthj-amb Thermal resistance junction-amb max 62.5 Rthj-pcb(1) Thermal resistance junction-pcb max 1. D²PAK TO-220 TO-247 TO-220FP Unit 4.17 50 62.5 °C/W 30 When mounted on 1inch² FR-4 board, 2 oz Cu. Doc ID 15868 Rev 4 3/21 Electrical characteristics 2 STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 600 V VDS = 600 V, TJ=125 °C IGSS Gate body leakage current (VDS = 0) VGS = ±25 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source onresistance VGS= 10 V, ID=6.5 A V(BR)DSS Table 5. Symbol Min. Typ. Max. 600 2 Unit V 3 1 10 µA µA ±100 nA 4 V 0.260 0.285 Ω Dynamic Parameter Test conditions Min. Typ. Max. Unit Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f =1 MHz, VGS = 0 - 1000 60 3 - pF pF pF Coss eq.(1) Output equivalent capacitance VDS = 0, to 480 V, VGS=0 - 225 - pF Rg Intrinsic resistance f=1 MHz open drain - 3.5 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 13 A VGS = 10 V (see Figure 19) - 35 6 20 - nC nC nC Ciss Coss Crss 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS. Table 6. Switching times Symbol Parameter td(on) tr td(off) tf 4/21 Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 6.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) Doc ID 15868 Rev 4 Min. Typ. - 12 15 55 25 Max. Unit - ns ns ns ns STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Table 7. Symbol Electrical characteristics Source drain diode Parameter Test conditions Min. Typ. Max. Unit - 13 52 A A 1.6 V ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD = 13 A, VGS=0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD =13 A, di/dt =100 A/µs, VDD = 60 V (see Figure 20) - 300 4.0 25 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current VDD = 60 V di/dt =100 A/µs, ISD = 13 A Tj = 150°C (see Figure 20) - 360 4.5 25 ns µC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 15868 Rev 4 5/21 Electrical characteristics STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 and Figure 3. D²PAK Thermal impedance for TO-220 and D²PAK AM05525v1 ) S( on 10 Op Lim era ite tion d by in th ma is a x R re a D is ID (A) 10µs 100µs 1ms 1 Tj=150°C Tc=25°C 10ms Sinlge pulse 0.1 0.1 Figure 4. 10 1 100 Safe operating area for TO-220FP 1 Figure 5. Thermal impedance for TO-220FP Figure 7. Thermal impedance for TO-247 AM05526v1 ID (A) 10 VDS(V) is ea ) ar S(on is th RD x in n ma o ti y ra d b e e p O mit Li 10µs 100µs 1ms 10ms Tj=150°C Tc=25°C 0.1 Sinlge pulse 0.01 0.1 Figure 6. 10 1 100 VDS(V) Safe operating area for TO-247 AM05527v1 ) (o n 10µs DS 10 Op Lim era ite tion d by in th m is ax ar R e a is ID (A) 100µs 1ms 1 Tj=150°C Tc=25°C 10ms Sinlge pulse 0.1 0.1 6/21 1 10 100 VDS(V) Doc ID 15868 Rev 4 STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Figure 8. Output characteristics ID (A) Figure 9. AM05528v1 VGS=10V Electrical characteristics Transfer characteristics VDS=19V 7V 24 24 6V 20 20 16 16 12 12 5V 8 8 4 4 0 0 AM05529v1 ID (A) 8 4 12 20 16 4V VDS(V) Figure 10. Static drain-source on resistance AM05530v1 RDS(on) (Ω) 0.28 0 0 2 6 8 10 VGS(V) Figure 11. Gate charge vs gate-source voltage AM05531v1 VDS VGS (V) 12 VGS = 10 V 4 0.27 VDD=480V (V) ID=13A 500 10 0.26 400 VDS 0.25 8 0.24 6 300 0.23 200 4 0.22 0.20 0 100 2 0.21 4 2 6 8 10 Figure 12. Capacitance variations 1000 0 10 20 30 40 0 Qg(nC) Figure 13. Output capacitance stored energy AM05532v1 C (pF) 0 12 ID(A) AM05533v1 Eoss (µJ) 7 Ciss 6 5 100 4 Coss 10 2 Crss 1 0.1 3 1 10 100 VDS(V) Doc ID 15868 Rev 4 1 0 0 100 200 300 400 500 600 VDS(V) 7/21 Electrical characteristics STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Figure 14. Normalized gate threshold voltage vs temperature AM05534v1 VGS(th) (norm) 1.10 Figure 15. Normalized on resistance vs temperature AM05535v1 RDS(on) (norm) 2.1 ID = 250 µA VGS = 10 V 1.9 1.00 1.7 1.5 0.90 1.3 1.1 0.80 0.9 0.70 -50 -25 0.5 -50 -25 0.7 0 25 50 75 100 TJ(°C) Figure 16. Normalized BVDSS vs temperature AM09028v1 VDS (norm) ID=1mA 1.10 25 0 TJ(°C) 75 100 50 Figure 17. Source-drain diode forward vs temperature AM14768v1 VSD (V) 1.4 1.08 TJ=-50°C 1.2 1.06 TJ=25°C 1.0 1.04 1.02 0.8 1.00 0.6 TJ=150°C 0.98 0.4 0.96 0.94 0.92 -50 -25 8/21 0.2 0 25 50 75 100 TJ(°C) Doc ID 15868 Rev 4 0 0 2 4 6 8 10 12 ISD(A) STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 22. Unclamped inductive waveform AM01471v1 Figure 23. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 15868 Rev 4 10% AM01473v1 9/21 Package mechanical data 4 STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 8. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 10/21 Max. 0.4 0° 8° Doc ID 15868 Rev 4 STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Package mechanical data Figure 24. D²PAK (TO-263) drawing 0079457_T Figure 25. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters Doc ID 15868 Rev 4 11/21 Package mechanical data Table 9. STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 12/21 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 15868 Rev 4 STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Package mechanical data Figure 26. TO-220FP drawing 7012510_Rev_K_B Doc ID 15868 Rev 4 13/21 Package mechanical data Table 10. STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 14/21 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 15868 Rev 4 STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Package mechanical data Figure 27. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 15868 Rev 4 15/21 Package mechanical data Table 11. STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 16/21 Max. 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 Doc ID 15868 Rev 4 5.70 STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Package mechanical data Figure 28. TO-247 drawing 0075325_G Doc ID 15868 Rev 4 17/21 Packaging mechanical data 5 STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Packaging mechanical data Table 12. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. 18/21 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Doc ID 15868 Rev 4 Min. Max. 330 13.2 26.4 30.4 STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Packaging mechanical data Figure 29. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 30. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID 15868 Rev 4 19/21 Revision history 6 STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Revision history Table 13. Document revision history Date Revision 15-Jun-2009 1 First release 11-Nov-2009 2 – Added RDS(on) typical value – Added new package, mechanical data: I²PAK – Document status promoted from preliminary data to datasheet 06-Oct-2010 3 Inserted new value in Table 5. 4 Updated title and description on the cover page. Updated figures 10, 11, 14, 15 and 16. Updated Section 4: Package mechanical data and Section 5: Packaging mechanical data. 01-Oct-2012 20/21 Changes Doc ID 15868 Rev 4 STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 15868 Rev 4 21/21
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