STP2N95K5

STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 N-channel 950 V, 4.2 Ω typ., 2 A Zener-protected SuperMESH™ 5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes 3 VDS RDS(on) max ID PTOT 1 STD2N95K5 DPAK 3 2 STF2N95K5 950 V 1 TAB 45 W 20 W 5Ω 2A STP2N95K5 TO-220FP 45 W STU2N95K5 TAB • TO-220 worldwide best RDS(on) 3 1 3 2 2 1 TO-220 • Worldwide best FOM (figure of merit) • Ultra low gate charge IPAK • 100% avalanche tested Figure 1. Internal schematic diagram '7$% • Zener-protected Applications • Switching applications Description * 6 AM01476v1 These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency. Table 1. Device summary Order codes Marking Package Packaging DPAK Tape and reel STD2N95K5 STF2N95K5 TO-220FP 2N95K5 STP2N95K5 TO-220 STU2N95K5 IPAK September 2013 This is information on a product in full production. DocID025300 Rev 1 Tube 1/23 www.st.com Contents STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2/23 .............................................. 9 DocID025300 Rev 1 STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter DPAK, TO-220, IPAK TO-220FP VGS ID ID Gate- source voltage 30 (1) Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C IDM (2) Drain current (pulsed) PTOT Total dissipation at TC = 25 °C 2 (1) 1.3 V 2 A 1.3 A 8 20 Unit A 45 W IAR Max current during repetitive or single pulse avalanche 1 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID=IAS, VDD= 50 V) 50 mJ dv/dt (3) Peak diode recovery voltage slope 4.5 V/ns dv/dt(4) MOSFET dv/dt ruggedness 50 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC=25 °C) Tj Tstg Operating junction temperature Storage temperature 2500 V - 55 to 150 °C 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area. 3. ISD ≤ 2 A, di/dt ≤ 100 A/μs, VPeak ≤ V(BR)DSS. 4. VSD ≤ 760 V Table 3. Thermal data Value Symbol DPAK, Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max DocID025300 Rev 1 TO-220FP TO-220, IPAK 6.25 2.78 62.50 Unit °C/W °C/W 3/23 23 Electrical characteristics 2 STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 4. On /off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 950 V IDSS Zero gate voltage, VGS = 0 VDS = 950 V drain current VDS = 950 V, TC=125 °C 1 50 μA μA IGSS Gate-body leakage current VGS = ± 20 V; VDS=0 10 μA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 μA 4 5 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 1 A 4.2 5 Ω 3 Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit - 105 - pF - 9 - pF Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 0.5 - pF Co(tr)(1) Equivalent capacitance time related - 16 - pF Co(er)(2) Equivalent capacitance energy related - 6 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 16 - Ω Qg Total gate charge - 10 - nC Qgs Gate-source charge - 1.5 - nC Qgd Gate-drain charge VDD = 760 V, ID = 2 A VGS =10 V (see Figure 19) - 8 - nC VDS =100 V, f=1 MHz, VGS=0 VGS = 0, VDS = 0 to 760 V 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/23 DocID025300 Rev 1 STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 Electrical characteristics Table 6. Switching times Symbol td(on) tr Parameter Test conditions tf Typ. Max Unit - 8.5 - ns - 13.5 - ns - 20.5 - ns - 32.5 - ns Min. Typ. Max Unit Turn-on delay time VDD = 475 V, ID = 1 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) Rise time td(off) Min. Turn-off-delay time Fall time Table 7. Source drain diode Symbol ISD ISDM (1) VSD (2) Parameter Test conditions Source-drain current - 2 A Source-drain current (pulsed) - 8 A 1.5 V Forward on voltage ISD = 2 A, VGS = 0 - trr Reverse recovery time - 300 ns Qrr Reverse recovery charge - 1.15 μC IRRM Reverse recovery current ISD = 2 A, di/dt = 100 A/μs VDD= 60 V (see Figure 20) - 7.6 A - 525 ns - 1.90 μC - 7.2 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 2 A, di/dt = 100 A/μs VDD= 60 V TJ = 150 °C (see Figure 20) 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% Table 8. Gate-source Zener diode Symbol Parameter Test conditions V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID=0 Min Typ. Max. Unit 30 - - V The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device’s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. DocID025300 Rev 1 5/23 23 Electrical characteristics 2.1 STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 Electrical characteristics (curves) Figure 2. Safe operating area for DPAK and IPAK Figure 3. Thermal impedance for DPAK and IPAK GIPD250920131432FSR ID (A) 10μs Operation in this area is Limited by max RDS(on) 1 100μs 1ms 0.1 10ms Tj=150°C Tc=25°C Single pulse 0.01 0.1 1 10 100 VDS(V) Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP GIPD250920131438FSR ID (A) Operation in this area is Limited by max RDS(on) 10μs 1 100μs 1ms 0.1 10ms Tj=150°C Tc=25°C Single pulse 0.01 0.1 1 10 100 VDS(V) Figure 6. Safe operating area for TO-220 Figure 7. Thermal impedance for TO-220 GIPD250920131442FSR ID (A) Operation in this area is Limited by max RDS(on) 10μs 100μs 1 1ms 10ms 0.1 0.01 0.1 6/23 Tj=150°C Tc=25°C Single pulse 1 10 100 VDS(V) DocID025300 Rev 1 STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 Figure 8. Output characteristics Figure 9. Transfer characteristics GIPD250920131453FSR ID (A) VGS= 11V 3 VDS= 20V 2.5 2 2 8V 1.5 1.5 1 1 7V 0.5 0.5 6V 0 0 5 20 VDS(V) 15 10 Figure 10. Gate charge vs gate-source voltage GIPD250920131508FSR VDS VGS (V) (V) 800 VDD = 760 V ID = 2 A 12 700 10 0 5 6 7 10 VGS(V) 9 8 Figure 11. Static drain-source on-resistance GIPD250920131521FSR RDS(on) (Ω) 10 9 8 600 8 6 4 6 400 5 300 4 100 4 2 6 8 10 0 Qg(nC) Figure 12. Capacitance variations GIPD250920131528FSR C (pF) 7 500 200 2 0 0 GIPD250920131502FSR ID (A) 3 10V 9V 2.5 Electrical characteristics 1000 VGS= 10V 3 2 1 0 0 0.4 0.8 1.2 2 ID(A) 1.6 Figure 13. Output capacitance stored energy GIPD250920131533FSR E (μJ) 3 100 2 10 1 1 0.1 0.1 1 10 100 VDS(V) 0 0 DocID025300 Rev 1 200 400 600 800 VDS(V) 7/23 23 Electrical characteristics STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 Figure 14. Normalized gate threshold voltage vs temperature GIPD250920131539FSR VGS(th) (norm) 1.2 Figure 15. Normalized on-resistance vs temperature GIPD250920131545FSR RDS(on) (norm) 2.5 ID= 1A VGS= 10V 2 1 1.5 0.8 1 0.6 0.5 0.4 -100 -50 50 0 100 150 Tj(°C) Figure 16. Source-drain diode forward characteristics GIPD250920131554FSR Tj= -50°C V(BR)DSS (norm) 1 Tj= 25°C 1.1 Tj= 150°C 1.05 0.8 1 0.7 0.95 0.6 0.9 0.5 0 0.5 1 1.5 2 ISD(A) -50 0 50 100 150 Tj(°C) Figure 17. Normalized V(BR)DSS vs temperature VSD (V) 0.9 8/23 0 -100 0.85 -100 DocID025300 Rev 1 GIPD250920131550FSR ID= 1mA -50 0 50 100 150 Tj(°C) STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 20. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 21. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID025300 Rev 1 10% AM01473v1 9/23 23 Package mechanical data 4 STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/23 DocID025300 Rev 1 STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 Package mechanical data Table 9. DPAK (TO-252) type A mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 (L1) 2.80 L2 0.80 L4 0.60 1.00 R V2 0.20 0° 8° DocID025300 Rev 1 11/23 23 Package mechanical data STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 Figure 24. DPAK (TO-252) type A drawing 0068772_L_type_A 12/23 DocID025300 Rev 1 STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 Package mechanical data Figure 25. DPAK footprint (a) Footprint_REV_L a. All dimensions are in millimeters DocID025300 Rev 1 13/23 23 Package mechanical data STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 Table 10. TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 14/23 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID025300 Rev 1 STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 Package mechanical data Figure 26. TO-220FP drawing 7012510_Rev_K_B DocID025300 Rev 1 15/23 23 Package mechanical data STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 16/23 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID025300 Rev 1 STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 Package mechanical data Figure 27. TO-220 type A drawing BW\SH$B5HYB7 DocID025300 Rev 1 17/23 23 Package mechanical data STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 Table 12. IPAK (TO-251) mechanical data mm. DIM min. typ. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H 18/23 max. 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° DocID025300 Rev 1 1.00 STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 Package mechanical data Figure 28. IPAK (TO-251) drawing 0068771_K DocID025300 Rev 1 19/23 23 Packaging mechanical data 5 STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 Packaging mechanical data Table 13. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 20/23 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID025300 Rev 1 18.4 22.4 STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 Packaging mechanical data Figure 29. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 30. Reel for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At slot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 DocID025300 Rev 1 21/23 23 Revision history 6 STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 Revision history Table 14. Document revision history 22/23 Date Revision 25-Sep-2013 1 Changes First release. DocID025300 Rev 1 STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2013 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com DocID025300 Rev 1 23/23 23