STP2NK60Z

STF2NK60Z - STQ2NK60ZR-AP STP2NK60Z - STD2NK60Z-1 N-CHANNEL 600V - 7.2Ω - 1.4A TO-220/TO-220FP/TO-92/IPAK Zener-Protected SuperMESH™ MOSFET Table 1: General Features TYPE VDSS STF2NK60Z STQ2NK60ZR-AP STP2NK60Z STD2NK60Z-1 600 V 600 V 600 V 600 V ■ ■ ■ ■ ■ ■ Figure 1: Package RDS(on) < < < < 8Ω 8Ω 8Ω 8Ω ID 1.4 0.4 1.4 1.4 Pw A A A A 20 3W 45 W 45 W TYPICAL RDS(on) = 7.2 Ω EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 1 TO-92 (Ammopack) TO-220 3 2 1 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. 2 3 1 IPAK 2 TO-220FP Figure 2: Internal Schematic Diagram APPLICATIONS ■ LOW POWER BATTERY CHARGERS ■ SWITH MODE LOW POWER SUPPLIES(SMPS) ■ LOW POWER, BALLAST, CFL (COMPACT FLUORESCENT LAMPS) Table 2: Order Codes Part Number Marking Package Packaging STQ2NK60ZR-AP Q2NK60ZR TO-92 AMMOPAK STP2NK60Z P2NK60Z TO-220 TUBE STD2NK60Z-1 D2NK60Z IPAK TUBE STF2NK60Z F2NK60Z TO-220FP TUBE Rev. 5 September 2005 1/16 STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 Table 3: Absolute Maximum ratings Symbol Parameter Value TO-220 / IPAK VDS VDGR VGS TO-92 Unit TO-220FP Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 1.4 0.4 1.4 (*) A ID Drain Current (continuous) at TC = 100°C 0.77 0.25 0.77 (*) A IDM (
) Drain Current (pulsed) 5.6 1.6 5.6 (*) A PTOT Total Dissipation at TC = 25°C Derating Factor VESD(G-S) VISO dv/dt (1) Tj Tstg 45 3 20 W 0.36 0.025 0.16 W/°C Gate source ESD (HBM-C= 100pF, R=1.5kΩ) 1500 Insulation Withstand Voltage (DC) V 2500 Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature V 4.5 V/ns -55 to 150 °C (
) Pulse width limited by safe operating area (1) ISD ≤ 1.4A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, T j ≤ T JMAX. (*) Limited only by maximum temperature allowed Table 4: Thermal Data TO-220/IPAK TO-220FP TO-92 Unit Rthj-case Thermal Resistance Junction-case Max 2.77 6.25 -- °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 100 120 °C/W Rthj-lead Thermal Resistance Junction-lead Max -- -- 40 °C/W 260 °C Tl Maximum Lead Temperature For Soldering Purpose 300 Table 5: Avalanche Characteristics Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 1.4 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 90 mJ Table 6: Gate-Source Zener Diode Symbol Parameter Test Conditions Min. BVGSO Gate source Breakdown Voltage Igs= ± 1 mA (Open Drain) 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/16 STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 7: On/Off Symbol Parameter Test Conditions Min. Typ. Max. 600 Unit Drain-source Breakdown Voltage ID = 1mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50 µA 3.75 4.5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 0.7 A 7.2 8 Ω Typ. Max. Unit V(BR)DSS 3 V Table 8: Dynamic Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Test Conditions Forward Transconductance VDS = 15 V, ID= 0.7 A Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 Min. 1 S 170 27 5 pF pF pF Equivalent Output Capacitance VGS = 0V, VDS = 0V to 480V 30 pF td(on) tr td(off) tr Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 300 V, ID = 0.65 A, RG= 4.7 Ω, VGS = 10 V (Resistive Load see, Figure 22) 8 30 22 55 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, ID = 1.5 A, VGS = 10V (see, Figure 24) 7.7 1.7 4 10 nC nC nC Typ. Max. Unit 1.5 6 A A 1.6 V Table 9: Source Drain Diode Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 1.5 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.3 A, di/dt = 100 A/µs VDD = 25V, Tj = 25°C (see test circuit, Figure 23) 250 550 4.4 ns µC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.3 A, di/dt = 100 A/µs VDD = 25V, Tj = 150°C (see test circuit, Figure 23) 300 690 4.6 ns µC A trr Qrr IRRM trr Qrr IRRM Test Conditions Min. (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. (3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 3/16 STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 Figure 3: .Safe Operating Area For TO-220 Figure 6: Thermal Impedance For TO-220 Figure 4: Safe Operating Area For IPAK Figure 7: Thermal Impedance For IPAK Figure 5: Safe Operating Area For TO-92 Figure 8: Thermal Impedance For TO-92 4/16 STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 Figure 9: Safe Operating Area For TO-220FP Figure 12: Thermal Impedance For TO-220FP Figure 10: Output Characteristics Figure 13: Transfer Characteristics Figure 11: Transconductance Figure 14: Gate Charge vs Gate-source Voltage 5/16 STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 Figure 15: Static Drain-source On Resistance Figure 18: Source-Drain Forward Characteristics Figure 16: Capacitance Variations Figure 19: Maximum Avalanche Energy vs Temperature Figure 17: Normalized Gate Thereshold Voltage vs Temperature Figure 20: Normalized On Resistance vs Temperature 6/16 STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 Figure 21: Normalized BVDSS vs Temperature 7/16 STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 Figure 22: Switching Times Test Circuit For Resistive Load Figure 23: Test Circuit For Inductive Load Switching and Diode Recovery Times 8/16 Figure 24: Gate Charge Test Circuit STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/16 STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 10/16 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 TO-92 AMMOPACK DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A1 4.45 4.95 0.170 0.194 T 3.30 3.94 0.130 0.155 T1 1.6 T2 0.06 2.3 d 0.41 P0 12.5 12.7 0.09 0.56 0.016 0.022 12.9 0.49 0.5 0.51 P2 5.65 6.35 7.05 0.22 0.25 0.27 F1, F2 2.44 2.54 2.94 0.09 0.1 0.11 delta H -2 2 -0.08 W 17.5 18 19 0.69 0.71 0.74 W0 5.7 6 6.3 0.22 0.23 0.24 W1 8.5 9 9.25 0.33 0.35 W2 0.5 H 18.5 H0 15.5 16 H1 D0 0.08 20.5 0.72 16.5 0.61 0.80 0.63 25 3.8 t 4 4.2 L 0.15 delta P -1 0.157 0.16 0.035 11 3 0.65 0.98 0.9 l1 0.36 0.02 0.43 0.11 1 -0.04 0.04 11/16 STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 E 6.4 6.6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 12/16 STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 TO-92 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.32 4.95 0.170 0.194 0.020 b 0.36 0.51 0.014 D 4.45 4.95 0.175 0.194 E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.094 0.105 e1 1.14 1.40 0.044 0.055 L 12.70 15.49 0.50 0.610 R 2.16 2.41 0.085 0.094 S1 0.92 1.52 0.036 0.060 W 0.41 0.56 0.016 0.022 V 5° 5° 13/16 STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 14/16 L5 1 2 3 L4 STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 Table 10: Revision History Date Revision Description of Changes 07-Jul-2004 3 The document change from “TARGET” to “COMPLETE” 11/Nov/2004 05-Sep-2005 4 5 New stylesheet Added TO-220FP Inserted Ecopack indication 15/16 STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 16/16