STP7NM80

STD7NM80, STD7NM80-1 STF7NM80, STP7NM80 N-channel 800 V, 0.95 Ω, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh™ Power MOSFET Features Type STD7NM80 STD7NM80-1 STF7NM80 STP7NM80 ■ ■ ■ VDSS 800 V 800 V 800 V 800 V RDS(on) < 1.05 Ω < 1.05 Ω < 1.05 Ω < 1.05 Ω ID 6.5 A 6.5 A 6.5 A 6.5 A 3 3 TO-220FP 1 2 TO-220 1 2 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 3 2 1 3 IPAK DPAK Application ■ Switching applications Figure 1. Internal schematic diagram Description MDmesh™ technology applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers low onresistance, high dv/dt capability and excellent avalanche characteristics. Table 1. Device summary Marking D7NM80 D7NM80 F7NM80 P7NM80 Package DPAK IPAK TO-220FP TO-220 Packaging Tape and reel Tube Tube Tube Order codes STD7NM80 STD7NM80-1 STF7NM80 STP7NM80 October 2009 Doc ID 12573 Rev 3 1/17 www.st.com 17 Contents STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuits .............................................. 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 Doc ID 12573 Rev 3 STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Value Parameter TO-220, IPAK DPAK Unit TO-220FP V V 6.5 4 (1) VDS VGS ID ID IDM (2) PTOT VISO Tj Tstg Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Operating junction temperature Storage temperature 6.5 4 26 90 -- 800 ± 30 A A A W V °C (1) 26 (1) 25 2500 -55 to 150 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area Table 3. Symbol Thermal data Parameter TO-220 1.38 62.5 100 300 IPAK, DPAK TO-220FP Unit 5 62.5 °C/W °C/W °C Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max Tl Maximum lead temperature for soldering purpose Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 °C, ID=IAS, VDD= 50 V) Max value 1 240 Unit A mJ Doc ID 12573 Rev 3 3/17 Electrical characteristics STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS= 0 VDS = Max rating, VDS = Max rating,Tc = 125 °C VGS = ± 30 V VDS= VGS, ID = 250 µA VGS= 10 V, ID= 3.25 A 3 4 0.95 Min. 800 1 100 ±100 5 1.05 Typ. Max. Unit V µA µA nA V Ω Table 6. Symbol gfs(1) Ciss Coss Crss Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Gate input resistance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =15 V, ID= 3.25 A Min. Typ. Max. 4 620 460 15 Unit S pF pF pF VDS =25 V, f=1 MHz, VGS=0 - - Rg Qg Qgs Qgd 1. f=1MHz Gate DC Bias=0 Test signal level=20 mV Open drain VDD=640 V, ID = 6.5 A VGS =10 V (see Figure 19) - 7 18 4 11 - Ω nC nC nC - - Pulsed: pulse duration = 300µs, duty cycle 1.5% 4/17 Doc ID 12573 Rev 3 STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 400 V, ID = 3.25 A, RG=4.7 Ω, VGS=10 V (see Figure 18) Min. Typ. 20 8 35 10 Max. Unit ns ns ns ns - - Table 8. Symbol ISD ISDM VSD(1) trr Qrr IRRM trr Qrr IRRM 1. Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 6.5 A, VGS=0 ISD = 6.5 A,VDD= 50 V di/dt=100 A/µs (see Figure 20) ISD = 6.5 A,VDD= 50 V di/dt=100 A/µs, Tj=150 °C (see Figure 20) Test conditions Min. 460 4 17 680 6 17 Typ. Max. 6.5 26 1.3 Unit A A V ns µC A ns µC A - Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 12573 Rev 3 5/17 Electrical characteristics STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for DPAK, IPAK Figure 7. Thermal impedance for DPAK, IPAK 6/17 Doc ID 12573 Rev 3 STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 Figure 8. Output characterisics Figure 9. Electrical characteristics Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Doc ID 12573 Rev 3 7/17 Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature 8/17 Doc ID 12573 Rev 3 STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 Test circuits 3 Test circuits Figure 19. Gate charge test circuit VDD 12V 2200 Figure 18. Switching times test circuit for resistive load 47kΩ 100nF 1kΩ RL VGS VD RG PW D.U.T. µF 3.3 µF VDD Vi=20V=VGMAX 2200 µF IG=CONST 2.7kΩ 47kΩ PW 1kΩ 100Ω D.U.T. VG AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit A D G S B 25 Ω D.U.T. A FAST DIODE B A L=100µH B D G 3.3 µF 1000 µF L VD 2200 µF 3.3 µF VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 22. Unclamped inductive waveform V(BR)DSS VD Figure 23. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 Doc ID 12573 Rev 3 9/17 Package mechanical data STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/17 Doc ID 12573 Rev 3 STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 Package mechanical data TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 Doc ID 12573 Rev 3 11/17 Package mechanical data STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 TO-251 (IPAK) mechanical data mm. DIM. A A1 b b2 b4 c c2 D E e e1 H L (L1) L2 V1 9.00 0.80 0.80 10 o 4.40 16.10 9.40 1.20 5.20 0.45 0.48 6.00 6.40 2.28 4.60 min. 2.20 0.90 0.64 typ max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60 0068771_H 12/17 Doc ID 12573 Rev 3 STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 Package mechanical data TO-252 (DPAK) mechanical data DIM. A A1 A2 b b4 c c2 D D1 E E1 e e1 H L L1 L2 L4 R V2 0o 0.60 0.20 8o 4.40 9.35 1 2.80 0.80 1 6.40 4. 70 2.28 4.60 10.10 mm. min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 ty p ma x . 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 0068772_G Doc ID 12573 Rev 3 13/17 Package mechanical data STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 TO-220FP mechanical data mm Dim. Min. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.8 2.9 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 3.6 16.4 9.3 3.2 Typ. Max. 4.6 2.7 2.75 0.7 1 1.70 1.5 5.2 2.7 10.4 L7 E A B Dia L6 L5 F1 F2 F D H G1 G L2 L 3 L4 7012510_Rev_J 14/17 Doc ID 12573 Rev 3 STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 Packaging mechanical data 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 Doc ID 12573 Rev 3 15/17 Revision history STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 6 Revision history Table 9. Date 22-Sep-2006 09-Oct-2007 02-Oct-2009 Document revision history Revision 1 2 3 First release Added new section: Electrical characteristics (curves) Corrected marking and description on first page Changes 16/17 Doc ID 12573 Rev 3 STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 12573 Rev 3 17/17