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STPS10H100CR

STPS10H100CR

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    STPS10H100CR - HIGH VOLTAGE POWER SCHOTTKY RECTIFIER - STMicroelectronics

  • 数据手册
  • 价格&库存
STPS10H100CR 数据手册
® STPS10H100CT/CG/CR/CFP HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj VF (max) 2x5A 100 V 175°C 0.61 V K A1 K A2 K FEATURES AND BENEFITS HIGH JUNCTION TEMPERATURE CAPABILITY FOR CONVERTERS LOCATED IN CONFINED ENVIRONMENT LOW LEAKAGE CURRENT AT HIGH TEMPERATURE LOW STATIC AND DYNAMIC LOSSES AS A RESULT OF THE SCHOTTKY BARRIER AVALANCHE CAPABILITY SPECIFIED s s s s A2 A1 A1 A2 K D2PAK STPS10H100CG I2PAK STPS10H100CR DESCRIPTION A2 A2 K A1 Schottky barrier rectifier designed for high frequency miniature Switched Mode Power Supplies such as adaptators and on board DC/DC converters. Packaged in TO-220AB, TO-220FPAB, D2PAK and I2PAK. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS forward current Average forward current δ = 0.5 TO-220AB D2PAK / I2PAK TO-220FPAB IFSM IRRM PARM Tstg Tj dV/dt *: Surge non repetitive forward current Repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage A1 K TO-220AB STPS10H100CT TO-220FPAB STPS10H100CFP Value 100 10 Tc = 165°C Tc = 160°C tp = 10 ms sinusoidal tp = 2 µs square F = 1kHz tp = 1µs Tj = 25°C 180 1 7200 - 65 to + 175 175 10000 per diode per device 5 10 Unit V A A A A W °C °C V/µs dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) 1/7 July 2003 - Ed: 3F STPS10H100CT/CG/CR/CFP THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) Rth (j-c) Rth (c) When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Pulse test : * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% Parameter Junction to case D2PAK / I2PAK TO-220AB Per diode Total Coupling Junction to case TO-220FPAB Per diode Total Coupling Value 2.2 1.3 0.3 4.5 3.5 2.5 Unit °C/W °C/W Min. Typ. 1.3 Max. 3.5 4.5 0.73 0.61 0.85 0.71 Unit µA mA V VR = VRRM IF = 5 A 0.57 IF = 10 A 0.66 To evaluate the maximum conduction losses use the following equation : P = 0.51 x IF(AV) + 0.02 x IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) δ = 0.1 δ = 0.05 δ=1 δ = 0.2 δ = 0.5 Fig. 2: Average forward current versus ambient temperature (δ=0.5, per diode). IF(av)(A) 6 Rth(j-a)=Rth(j-c) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 5 D²PAK/I²PAK/TO-220AB 4 3 TO-220FPAB Rth(j-a)=15°C/W T 2 1 tp 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 IF(av) (A) δ=tp/T Tamb(°C) 0 25 50 75 100 125 150 175 0 2/7 STPS10H100CT/CG/CR/CFP Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1µs) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25°C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(µs) 10 100 1000 Tj(°C) 0 0 25 50 75 100 125 150 Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) IM(A) Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode)(TO-220FPAB) IM(A) 80 70 60 50 40 30 Tc=50°C 120 100 80 Tc=50°C 60 Tc=75°C Tc=75°C 40 Tc=125°C 20 IM t 20 10 Tc=125°C IM t δ=0.5 t(s) 1E-2 1E-1 1E+0 0 1E-3 δ=0.5 t(s) 1E-2 1E-1 1E+0 0 1E-3 Fig. 6-1: Relative variation of thermal impedance junction to case versus pulse duration (per diode). Fig. 6-2: Relative variation of thermal impedance junction to case versus pulse duration (per diode).(TO-220FPAB) Zth(j-c)/Rth(j-c) 1.0 0.8 1.0 0.8 0.6 0.4 0.2 Zth(j-c)/Rth(j-c) δ = 0.5 0.6 0.4 T δ = 0.5 δ = 0.2 δ = 0.1 Single pulse T 0.2 tp(s) 1E-2 1E-1 δ=tp/T tp δ = 0.2 δ = 0.1 Single pulse 0.0 1E-3 tp(s) 1E-2 1E-1 δ=tp/T tp 1E+0 0.0 1E-3 1E+0 1E+1 3/7 STPS10H100CT/CG/CR/CFP Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). 1E+4 1E+3 1E+2 1E+1 1E+0 IR(µA) Tj=150°C Tj=125°C Tj=100°C C(pF) 1000 F=1MHz Tj=25°C 100 Tj=25°C 1E-1 VR(V) 1E-2 0 10 20 30 40 50 60 70 80 90 100 VR(V) 10 1 2 5 10 20 50 100 Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm) Rth(j-a) (°C/W) 100.0 IFM(A) Tj=125°C Typical values 80 70 Tj=125°C 60 50 40 30 20 10 10.0 Tj=150°C Typical values Tj=25°C 1.0 0.1 0.0 VFM(V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 S(Cu) (cm²) 0 2 4 6 8 10 12 14 16 18 20 0 4/7 STPS10H100CT/CG/CR/CFP PACKAGE MECHANICAL DATA D2PAK DIMENSIONS A E L2 C2 REF. A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 Millimeters Min. Max. 4.40 4.60 2.49 2.69 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 1.36 8.95 9.35 10.00 10.40 4.88 5.28 15.00 15.85 1.27 1.40 1.40 1.75 2.40 3.20 0.40 typ. 0° 8° Inches Min. Max. 0.173 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.045 0.067 0.017 0.024 0.048 0.054 0.352 0.368 0.393 0.409 0.192 0.208 0.590 0.624 0.050 0.055 0.055 0.069 0.094 0.126 0.016 typ. 0° 8° D L L3 A1 B2 B G A2 C R M * V2 * FLAT ZONE NO LESS THAN 2mm FOOT PRINT in millimeters 16.90 10.30 1.30 5.08 3.70 8.90 5/7 STPS10H100CT/CG/CR/CFP PACKAGE MECHANICAL DATA I2PAK DIMENSIONS REF. A E L2 c2 Millimeters Min. Max. 4.60 2.69 0.93 1.17 1.17 0.60 1.36 9.35 2.70 10.4 13.6 3.78 1.40 4.40 2.49 0.70 1.14 1.14 0.45 1.23 8.95 2.40 10.0 13.1 3.48 1.27 Inches Min. 0.173 0.098 0.028 0.044 0.044 0.018 0.048 0.352 0.094 0.394 0.516 0.137 0.050 Max. 0.181 0.106 0.037 0.046 0.046 0.024 0.054 0.368 0.106 0.409 0.535 0.149 0.055 A A1 b b1 b2 c c2 D L1 b2 L b1 b e A1 D e E L c L1 L2 PACKAGE MECHANICAL DATA TO-220FPAB REF. DIMENSIONS Millimeters A H B Inches Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.018 0.027 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.205 0.094 0.106 0.393 0.409 0.63 Typ. 1.126 1.205 0.386 0.417 0.114 0.142 0.626 0.646 0.354 0.366 0.118 0.126 Dia L6 L2 L3 L5 D F1 L4 F2 L7 F G1 G E A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia. Min. Max. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.70 0.75 1 1.15 1.70 1.15 1.70 4.95 5.20 2.4 2.7 10 10.4 16 Typ. 28.6 30.6 9.8 10.6 2.9 3.6 15.9 16.4 9.00 9.30 3.00 3.20 6/7 STPS10H100CT/CG/CR/CFP PACKAGE MECHANICAL DATA TO-220AB REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 4.95 5.15 0.194 0.202 2.40 2.70 0.094 0.106 10 10.40 0.393 0.409 16.4 typ. 0.645 typ. 13 14 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.20 6.60 0.244 0.259 3.50 3.93 0.137 0.154 2.6 typ. 0.102 typ. 3.75 3.85 0.147 0.151 H2 Dia L5 C A L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. s s s Cooling method: C. Recommended torque value: 0.55 m.N Maximum torque value 0.70 m.N Ordering type STPS10H100CT STPS10H100CFP STPS10H100CG STPS10H100CG-TR STPS10H100CR s Marking STPS10H100CT STPS10H100CFP STPS10H100CG STPS10H100CG STPS10H100CR Package TO-220AB TO-220FPAB D2PAK D2PAK I2PAK Weight 2.20g 2.0 g 1.48g 1.48g 1.49g Base qty 50 50 50 1000 50 Delivery mode Tube Tube Tube Tape and reel Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7
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