STPS120M
Power Schottky rectifier
Datasheet - production data
Description
Single Schottky rectifier suited for switch mode
power supplies and high frequency DC to DC
converters.
"
Packaged in STmite, this device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection applications. Due
to the small size of the package this device fits
battery powered equipment (cellular, notebook,
PDA’s, printers) as well chargers and PCMCIA
cards.
,
67PLWH
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Table 1. Device summary
Symbol
Value
Features
IF(AV)
1A
• Very small conduction losses
VRRM
20 V
• Negligible switching losses
Tj (max)
150 °C
• Extremely fast switching
VF (typ)
0.36 V
• Low forward voltage drop for higher efficiency
and extented battery life
• Low thermal resistance
• Avalanche capability specified
July 2015
This is information on a product in full production.
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Characteristics
1
STPS120M
Characteristics
Table 2. Absolute ratings (limiting values at Tamb = 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
20
V
IF(RMS)
Forward rms current
2
A
IF(AV)
Average forward current, δ = 0.5, square wave
Tc = 140 °C
1
A
IFSM
Surge non repetitive forward current
tp = 8.3 ms sinusoidal
50
A
Repetitive peak avalanche power
Tj = 125 °C, tp = 10 µs
100
W
-65 to +150
°C
150
°C
PARM
(1)
Tstg
Tj
Storage temperature range
Maximum operating junction temperature
(2)
1. For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy measurements
and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, “Admissible
avalanche power of Schottky diodes” and AN2025, “Converter improvement using Schottky rectifier avalanche
specification”.
1
dPtot <
condition to avoid thermal runaway for a diode on its own heatsink
Rth(j-a)
dTj
2.
Table 3. Thermal resistance
Symbol
Rth(j-c)
Rth(j-a)(1)
Parameter
Value
Unit
Junction to case
20
°C/W
Junction to ambient
250
°C/W
Unit
1. Mounted with minimum recommended pad size, PC board FR4.
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
Tj = 25 °C
Tj = 100 °C
IR(1)
Reverse leakage current
Tj = 25 °C
Tj = 100 °C
Tj = 25 °C
Tj = 100 °C
Tj = 25 °C
VF(1)
Forward voltage drop
Tj = 100 °C
Tj = 25 °C
Tj = 100 °C
VR = VRRM
VR = 10 V
VR = 5 V
IF = 1 A
IF = 2 A
Min.
Typ.
Max.
-
1.3
3.9
-
275
850
-
0.6
2.0
-
145
450
-
0.4
1.0
-
105
300
-
0.44
0.49
-
0.36
0.41
-
0.48
0.54
-
0.42
0.48
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.34 x IF(AV) + 0.07 x IF2(RMS)
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µA
V
STPS120M
Characteristics
Figure 1. Average forward power dissipation
versus average forward current
Figure 2. Average forward current versus
ambient temperature (δ = 0.5)
PF(AV)(W)
0.6
δ = 0.2
δ = 0.1
δ = 0.5
0.5
δ = 0.05
0.4
δ=1
0.3
0.2
T
0.1
IF(AV)(A)
δ=tp/T
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
tp
1.1
3$50W33$50V
5
WKMD
5
WKMF
7
į WS7
1.2
Figure 3. Normalized avalanche power derating
versus pulse duration (Tj = 125 °C)
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Figure 4. Relative variation of thermal
impedance junction to case versus pulse
duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
0.3
0.2
W3V
0.1
Figure 5. Reverse leakage current versus
reverse voltage applied (typical values)
T
δ = 0.1
Single pulse
0.0
1.E-04
δ = 0.2
tp(s)
1.E-03
δ=tp/T
1.E-02
tp
1.E-01
Figure 6. Junction capacitance versus reverse
voltage applied (typical values)
C(pF)
IR(mA)
1000
1.E+01
F=1MHz
VOSC=30mVRMS
Tj=25°C
Tj=150°C
1.E+00
Tj=125°C
1.E-01
Tj=100°C
100
1.E-02
Tj=75°C
Tj=50°C
1.E-03
Tj=25°C
VR(V)
VR(V)
10
1.E-04
0
2
4
6
8
10
12
14
16
18
20
1
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Characteristics
STPS120M
Figure 7. Forward voltage drop versus forward Figure 8. Forward voltage drop versus forward
current (low level)
current (high level)
IFM(A)
IFM(A)
100.0
2.0
1.8
1.6
Tj=100°C
(maximum values)
Tj=100°C
(maximum values)
1.4
10.0
1.2
Tj=100°C
(typical values)
1.0
Tj=100°C
(typical values)
0.8
Tj=25°C
(maximum values)
1.0
0.6
Tj=25°C
(maximum values)
0.4
0.2
VFM(V)
VFM(V)
0.1
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.0
0.6
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Figure 9. Thermal resistance junction to ambient versus copper surface under tab (typical values)
5 WKMD &:
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STPS120M
2
Package information
Package information
•
Epoxy meets UL94, V0
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
2.1
STmite package information
Figure 10. STmite package outline
L3
D
b2
b
H
L2
L
E
R
C
A
A1
0° to 6°
R1
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Package information
STPS120M
Table 5. STmite package mechanical data
Dimensions
Ref.
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
0.85
1.00
1.15
0.033
0.039
0.045
A1
-0.05
0.05
-0.002
0.002
b
0.40
0.65
0.016
0.025
b2
0.70
1.00
0.027
0.039
c
0.10
0.25
0.004
0.010
D
1.75
1.90
2.05
0.069
0.007
0.081
E
1.75
1.90
2.05
0.069
0.007
0.081
H
3.60
3.75
3.90
0.142
0.148
0.154
L
0.50
0.63
0.80
0.020
0.025
0.031
L2
1.20
1.35
1.50
0.047
0.053
0.059
L3
0.50
0.019
R
0.07
0.003
R1
0.07
0.03
Figure 11. Footprint
1.82
1.38
2.03
0.75
1.10
0.50
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STPS120M
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Ordering information
Ordering information
Table 6. Ordering information
4
Order code
Marking
Package
Weight
Base qty
Delivery mode
STPS120M
120
STmite
15.5 mg
12000
Tape and reel
Revision history
Table 7. Document revision history
Date
Revision
Changes
Jul-2003
2A
13-Sep-2004
3
STmite package dimensions reference A1 change: from blank (min)
to -0.05mm and from 0.10 (max) to 0.05mm.
16-Feb-2011
4
Migrated from EDOCS.
20-Jul-2015
5
Updated Table 4 and reformatted to current standard.
Last update.
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STPS120M
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2015 STMicroelectronics – All rights reserved
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