STPS2530CG

® STPS2530C LOW DROP POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF(AV) VRRM Tj VF(max) FEATURES AND BENEFITS ■ ■ ■ ■ ■ 2 x 12.5 A 30 V 150°C 0.45 V K Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop for higher efficiency Low thermal resistance A2 A1 D2PAK DESCRIPTION Dual Schottky rectifier suited for switch Mode Power Supply and high frequency DC to DC converters. Packaged in D2PAK, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection applications. Table 3: Absolute Ratings (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) Repetitive peak reverse voltage RMS forward voltage Average forward current Tc = 140°C δ = 0.5 Per diode Per device tp = 10ms sinusoidal tp = 2 µs square F=1kHz tp = 100 µs square tp = 1µs Tj = 25°C bs O IRSM Tstg Tj IFSM IRRM let o ro P e du (s) ct so Ob - Table 2: Order Codes Part Numbers STPS2530CG STPS2530CG-TR te le ro P uc d s) t( Marking STPS2530CG STPS2530CG Parameter Value 30 30 12.5 25 180 1 2 3000 -65 to + 150 150 10000 Unit V A A A A A W °C °C V/µs Surge non repetitive forward current Peak repetitive reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * PARM dV/dt Critical rate of rise of reverse voltage (rated VR, Tj = 25°C) dPtot 1 * : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink dTj Rth ( j – a ) April 2005 REV. 1 1/5 STPS2530C Table 4: Thermal Parameters Symbol Rth(j-c) Rth(c) Junction to case Coupling Parameter Per diode Total Value 2.2 1.3 0.3 Unit °C/W When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 5: Static Electrical Characteristics (per diode) Symbol IR * Tests conditions Tj = 25°C VR = VRRM Reverse leakage current Tj = 125°C Tj = 25°C IF = 12.5A Tj = 125°C Forward voltage drop Tj = 25°C IF = 25A Tj = 125°C * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% Parameter Min. VF ** Typ 0.15 80 0.47 0.39 0.54 0.49 Max. 1.0 160 0.53 0.45 0.64 0.59 Unit mA V Pulse test: To evaluate the conduction losses use the following equation: P = 0.31 x IF(AV) + 0.0112 IF (RMS) 2 Figure 1: Conduction losses versus average current PF(AV)(W) 6 Figure 2: Average forward current versus ambient temperature (δ = 0.5, per diode) IF(AV)(A) 11 δ = 0.1 δ = 0.05 δ = 0.2 δ = 0.5 5 δ=1 4 3 2 1 IF(AV)(A) 0 0 1 2 3 Figure 3: Normalized avalanche derating versus pulse duration bs O 1 0.1 0.01 0.001 0.01 PARM(tp) PARM(1µs) let o ro P e 4 5 6 7 du 8 9 (s) ct T so Ob 9 8 7 6 5 4 3 2 1 0 13 0 10 te le ro P Rth(j-a)=Rth(j-c) Rth(j-a)=50°C/W uc d s) t( δ=tp/T tp Tamb(°C) 25 50 75 100 125 150 10 11 12 power Figure 4: Normalized avalanche derating versus junction temperature PARM(tp) PARM(25°C) 1.2 1 0.8 0.6 0.4 0.2 power tp(µs) 0.1 1 10 100 1000 Tj(°C) 0 25 50 75 100 125 150 2/5 STPS2530C Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values) IM(A) 175 150 125 100 75 50 25 0 1.E-03 1.E-02 1.E-01 1.E+00 IM t Figure 6: Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 δ = 0.5 Ta=25°C 0.5 Ta=75°C 0.4 0.3 δ = 0.2 δ = 0.1 Ta=125°C 0.2 Single pulse T δ=0.5 t(s) 0.1 0.0 1.E-03 1.E-02 tp(s) 1.E-01 δ=tp/T tp 1.E+00 Figure 7: Reverse leakage current versus reverse voltage applied (typical values) IR(mA) 1.E+03 Tj=150°C Figure 8: Junction capacitance versus reverse voltage applied (typical values) C(pF) 10.0 1.E+02 Tj=125°C Tj=100°C Tj=75°C 1.E+01 1.E+00 Tj=50°C 1.E-01 Tj=25°C 1.E-02 VR(V) 1.E-03 0 5 10 15 20 Figure 9: Forward voltage drop versus forward current IFM(A) 100 O bs 1 0.0 let o ro P e uc d (s) t 25 30 so Ob 0.1 1 1.0 eP let ro uc d s) t( F=1MHz VOSC=30mVRMS Tj=25°C VR(V) 10 100 Figure 10: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4, Cu = 35µm) Rth(j-a)(°C/W) 80 70 60 Tj=125°C (maximum values) Tj=125°C (typical values) Tj=25°C (maximum values) 50 40 30 20 10 10 VFM(V) 0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 S(mm²) 20 25 30 35 40 3/5 STPS2530C Figure 11: D2PAK Package Mechanical Data DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 0.70 0.93 0.027 0.037 1.14 1.70 0.045 0.067 0.45 0.60 0.017 0.024 1.23 1.36 0.048 0.054 8.95 9.35 0.352 0.368 10.00 10.40 0.393 0.409 4.88 5.28 0.192 0.208 15.00 15.85 0.590 0.624 1.27 1.40 0.050 0.055 1.40 1.75 0.055 0.069 2.40 3.20 0.094 0.126 0.40 typ. 0.016 typ. 0° 8° 0° 8° A E L2 C2 REF. A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 D L L3 A1 B2 B G A2 R C M * V2 * FLAT ZONE NO LESS THAN 2mm Figure 12:Foot Print Dimensions (in millimeters) 16.90 10.30 8.90 bs O ■ Table 6: Ordering Information Ordering type STPS2530CG Marking STPS2530CG STPS2530CG Package D2PAK Weight 1.48 g Base qty 50 1000 Delivery mode Tube Tape & reel let o ro P e 3.70 du (s) ct 5.08 1.30 so Ob - te le ro P uc d s) t( STPS2530CG-TR Epoxy meets UL94, V0 Table 7: Revision History Date 16-Apr-2005 Revision 1 First issue. Description of Changes 4/5 STPS2530C bs O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. 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