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STPS3030CG

STPS3030CG

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO263

  • 描述:

    DIODE ARRAY SCHOTTKY 30V D2PAK

  • 数据手册
  • 价格&库存
STPS3030CG 数据手册
® STPS3030CT/CG/CR LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS A1 IF(AV) VRRM Tj (max) VF (max) 2 x 15 A 30 V 150°C 0.42 V K A2 K FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP FOR HIGHER EFFICIENCY LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED DESCRIPTION Dual Schottky rectifier suited for switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO-220AB, D2PAK and I2PAK, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection applications. s s s s s s A2 A1 A1 K A2 D2PAK STPS3030CG TO-220AB STPS3030CT K A1 A2 I2PAK STPS3030CR ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current IF(AV) IFSM IRRM IRSM PARM Tstg Tj dV/dt *: Average forward current Surge non repetitive forward current Peak repetitive reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage (rated VR, Tj = 25°C) Tc = 135°C δ = 0.5 Per diode Per device Value 30 30 15 30 250 1 3 4100 - 65 to + 150 150 10000 Unit V A A A A A W °C °C V/µs tp = 10 ms Sinusoidal tp=2 µs square F=1kHz tp = 100 µs square tp = 1µs Tj = 25°C dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) 1/6 July 2003 - Ed: 3A STPS3030CT/CG/CR THERMAL RESISTANCES Symbol Rth(j-c) Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C VR = VRRM IF = IF = IF = IF = 15 A 15 A 30 A 30 A Min. Typ. 0.23 125 0.44 0.36 0.53 0.49 Max. 1.0 180 0.49 0.40 0.58 0.53 Unit mA V Parameter Junction to case TO-220AB - D PAK - I PAK 2 2 Per diode Total Coupling Value 1.2 0.8 0.4 Unit °C/W °C/W Pulse test : * tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation : P = 0.26 x IF(AV) + 0.0107 IF2(RMS) Fig. 1: Conduction losses versus average current. P(W) 10 9 8 7 6 δ=1 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 Fig. 2: Average forward current versus ambient temperature(δ = 0.5). IF(av)(A) 18 16 14 12 10 Rth(j-a)=Rth(j-c) 5 4 3 2 1 0 0 2 4 6 8 10 12 14 T 8 6 4 2 tp Rth(j-a)=50°C/W IF(av)(A) δ=tp/T 16 18 Tamb(°C) 0 25 50 75 100 125 150 0 20 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1µs) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25°C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(µs) 10 100 1000 Tj(°C) 0 0 25 50 75 100 125 150 2/6 STPS3030CT/CG/CR Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values). IM(A) 250 225 200 175 150 125 100 75 50 25 0 1.E-03 1.E-02 1.E-01 1.E+00 TC=125°C TC=25°C Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Single pulse δ = 0.2 δ = 0.1 δ = 0.5 TC=75°C T t(s) 0.1 0.0 1.E-03 1.E-02 tp(s) 1.E-01 δ=tp/T tp 1.E+00 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). IR(mA) 1.E+03 Tj=150°C Fig. 8: Junction capacitance versus reverse voltage applied (typical values). C(nF) 10.0 F=1MHz Vosc=30mV Tj=25°C 1.E+02 Tj=125°C 1.E+01 Tj=100°C Tj=75°C 1.0 1.E+00 Tj=50°C 1.E-01 Tj=25°C VR(V) 1.E-02 0 5 10 15 20 25 30 0.1 1 VR(V) 10 100 Fig. 9: Forward voltage drop versus forward current. IFM(A) 100 Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4, Cu = 35µm). Rth(j-a)(°C/W) 80 D²PAK 70 Tj=125°C (Maximum values) 60 Tj=125°C (Typical values) 50 Tj=25°C (Maximum values) 10 40 30 20 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 10 0 0 5 10 15 S(cm²) 20 25 30 35 40 3/6 STPS3030CT/CG/CR PACKAGE MECHANICAL DATA I²PAK REF. Min. A E L2 c2 DIMENSIONS Millimeters Inches Min. 0.173 0.098 0.028 0.044 0.044 0.018 0.048 0.352 0.094 0.394 0.516 0.137 0.050 Max. 0.181 0.106 0.037 0.046 0.046 0.024 0.054 0.368 0.106 0.409 0.535 0.149 0.055 Max. 4.60 2.69 0.93 1.17 1.17 0.60 1.36 9.35 2.70 10.4 13.6 3.78 1.40 A 4.40 2.49 0.70 1.14 1.14 0.45 1.23 8.95 2.40 10.0 13.1 3.48 1.27 A1 b b1 b2 c c2 D L1 b2 L b1 b e A1 D e E L c L1 L2 4/6 STPS3030CT/CG/CR PACKAGE MECHANICAL DATA D²PAK REF. Min. A E L2 C2 DIMENSIONS Millimeters Max. 4.60 2.69 0.23 0.93 1.70 0.60 1.36 9.35 10.40 5.28 15.85 1.40 1.75 3.20 8° Inches Min. 0.173 0.098 0.001 0.027 0.045 0.017 0.048 0.352 0.393 0.192 0.590 0.050 0.055 0.094 0° Max. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 0.409 0.208 0.624 0.055 0.069 0.126 8° A A1 A2 D 4.40 2.49 0.03 0.70 1.14 0.45 1.23 8.95 10.00 4.88 15.00 1.27 1.40 2.40 0° B B2 C L L3 A1 B2 B G A2 C R C2 D E G L L2 M * V2 L3 M R V2 * FLAT ZONE NO LESS THAN 2mm 0.40 typ. 0.016 typ. FOOTPRINT 16.90 10.30 1.30 5.08 3.70 8.90 5/6 STPS3030CT/CG/CR PACKAGE MECHANICAL DATA TO-220AB REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 4.95 5.15 0.194 0.202 2.40 2.70 0.094 0.106 10 10.40 0.393 0.409 16.4 typ. 0.645 typ. 13 14 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.20 6.60 0.244 0.259 3.50 3.93 0.137 0.154 2.6 typ. 0.102 typ. 3.75 3.85 0.147 0.151 H2 Dia L5 C A L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. s s s COOLING METHOD : C RECOMMENDED TORQUE VALUE : 0.55 M.N MAXIMUM TORQUE VALUE : 0.70 M.N Ordering type STPS3030CT STPS3030CG STPS3030CG-TR STPS3030CR Marking STPS3030CT STPS3030CG STPS3030CG STPS3030CR Package TO-220AB D²PAK D²PAK I²PAK Weight 2.2 g 1.48 g 1.48 g 1.49 g Base qty 50 50 1000 50 Delivery mode Tube Tube Tape & reel Tube s EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6
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