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STPS40SM120CTN

STPS40SM120CTN

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO-220-3

  • 描述:

    DIODE ARRAY SCHOTTKY 120V TO220

  • 数据手册
  • 价格&库存
STPS40SM120CTN 数据手册
STPS40SM120C Datasheet 120 V power Schottky rectifier Features A1 K A2 A1 I²PAK K K A2 A2 • • • • High current capability Avalanche rated Low forward voltage drop current High frequency operation • ECOPACK®2 compliant A1 Applications TO-220AB • • • • • Switching diode SMPS DC/DC converter LED lighting Notebook adapter Description This Schottky rectifier is suited for high frequency switch mode power supply. The voltage drop versus leakage current trade-off is in keeping with medium power hi-density adapter design. Product status link Packed in TO-220AB and I2PAK, the STPS40SM120C is optimized for use in notebook, game station and desktop adaptors, providing in these applications a good efficiency at both low and high load. STPS40SM120C Product summary Symbol Value IF(AV) 2 x 20 A VRRM 120 V Tj (max.) 150 °C VF (typ.) 0.63 V DS8940 - Rev 4 - June 2018 For further information contact your local STMicroelectronics sales office. www.st.com STPS40SM120C Characteristics 1 Characteristics Table 1. Absolute Ratings (limiting values, per diode, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 120 V IF(RMS) Forward rms current 30 A TC = 125 °C Per diode 20 TC = 115 °C Per device 40 IF(AV) Average forward current, δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 210 A PARM Repetitive peak avalanche power tp = 10 µs , Tj = 125 °C 1150 W -65 to +175 °C 150 °C Tstg Storage temperature range Tj Maximum operating junction temperature(1) A 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal resistance parameters Symbol Parameter Rth(j-c) Junction to case Rth(c) Coupling Value Per diode 1.35 Total 0.93 Unit °C/W 0.50 When the diodes 1 and 2 are used simultaneously: ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) For more information, please refer to the following application note : • AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (per diode) Symbol IR (1) VF (2) Parameter Reverse leakage current Forward voltage drop Test conditions Tj = 25 °C Tj = 125 °C VR = VRRM Min. Typ. Max. Unit - 55 275 µA - 20 50 mA Tj = 125 °C IF = 5 A - 0.46 0.51 Tj = 125 °C IF = 10 A - 0.55 0.60 Tj = 25 °C Tj = 125 °C IF = 20 A - 0.83 0.63 V 0.69 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.52 x IF(AV) + 0.0085 x IF 2 (RMS) For more information, please refer to the following application notes related to the power losses : • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode DS8940 - Rev 4 page 2/11 STPS40SM120C Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current (per diode) PF(AV) (W) 20 24 δ=0.5 16 Figure 2. Average forward current versus ambient temperature (δ = 0.5, per diode) IF(AV)(A) δ=1 Rth(j-a)=Rth(j-c) 20 δ=0.2 δ=0.1 16 δ=0.05 12 12 8 8 T T 4 4 IF(AV)( A) δ =tp/T 0 0 4 8 12 16 20 24 28 Figure 3. Normalized avalanche power derating versus pulse duration (Tj = 125 °C) 1 PARM (t p ) PARM (10 µs) 0 Tamb (°C) tp δ =tp/T tp 0 25 50 75 1 00 125 150 Figure 4. Relative variation of thermal impedance junction to case versus pulse duration 1.0 Zth(j-c)/ Rth(j-c) 0.9 0.8 0.7 0.1 0.6 0.5 0.4 0.3 0.01 0.2 0.1 0.001 t p(µs) 1 DS8940 - Rev 4 10 Single pulse t p (s) 0.0 100 1000 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 page 3/11 STPS40SM120C Characteristics (curves) Figure 5. Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 6. Junction capacitance versus reverse voltage applied (typical values, per diode) IR (mA) 1.E+02 10000 C(pF) F=1 MHz Vosc=30 mVRMS Tj=25 °C Tj=150 °C 1.E+01 Tj=125 °C Tj=100 °C 1.E+00 1000 Tj=75 °C 1.E-01 Tj=50 °C Tj=25 °C 1.E-02 V R (V) VR (V) 100 1.E-03 0 10 20 30 40 50 60 70 80 90 100 110 1 120 10 100 1000 Figure 7. Forward voltage drop versus forward current (per diode) IF (A) 1000.0 Tj=125 °C Maximum values 100.0 Tj=125 °C Typical values 10.0 Tj=25 °C Maximum values 1.0 V (V) F 0.1 0.0 DS8940 - Rev 4 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 page 4/11 STPS40SM120C Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 TO-220AB package information • • • • Epoxy meets UL 94,V0 Cooling method: by conduction (C) Recommended torque value: 0.55 N·m Maximum torque value: 0.70 N·m Figure 8. TO-220AB package outline DS8940 - Rev 4 page 5/11 STPS40SM120C TO-220AB package information Table 4. TO-220AB package mechanical data Dimensions Ref. Millimeters Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.240 0.035 b1 1.14 1.55 0.045 0.061 c 0.48 0.70 0.019 0.028 D 15.25 15.75 0.600 0.620 D1 DS8940 - Rev 4 Inches (for reference only) 1.27 typ. 0.050 typ. E 10.00 10.40 0.394 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.195 0.203 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.260 J1 2.40 2.72 0.094 0.107 L 13.00 14.00 0.512 0.551 L1 3.50 3.93 0.138 0.155 L20 16.40 typ. 0.646 typ. L30 28.90 typ. 1.138 typ. θP 3.75 3.85 0.148 0.152 Q 2.65 2.95 0.104 0.116 page 6/11 STPS40SM120C I²PAK package information 2.2 I²PAK package information • • Epoxy meets UL 94,V0 Cooling method: by conduction (C) Figure 9. I²PAK package outline DS8940 - Rev 4 page 7/11 STPS40SM120C I²PAK package information Table 5. I²PAK package mechanical data Dimensions Ref. DS8940 - Rev 4 Millimeters Inches (for reference only) Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.035 b1 1.14 1.70 0.044 0.067 c 0.49 0.70 0.019 0.028 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.195 0.203 E 10.00 10.40 0.394 0.409 L 13.00 14.00 0.512 0.551 L1 3.50 3.93 0.138 0.155 L2 1.27 1.40 0.050 0.055 page 8/11 STPS40SM120C Ordering information 3 Ordering information Table 6. Ordering information Order code Marking Package Weight Base qty. Delivery mode STPS40SM100CT PS40SM100CT TO-220AB 1.95 g 50 Tube PS40SM100CR I2PAK 1.50 g 50 Tube STPS40SM100CR DS8940 - Rev 4 page 9/11 STPS40SM120C Revision history Table 7. Document revision history DS8940 - Rev 4 Date Version Changes 02-Apr-2012 1 First issue. 04-Nov-2014 2 Added TO-220AB and TO-220FPAB package information. 11-Apr-2017 3 Updated Section 1: "Characteristics" and Section 1.1: "Characteristics (curves)". 27-Jun-2018 4 Updated Table 1. Absolute Ratings (limiting values, per diode, at 25 °C, unless otherwise specified) and Figure 3. Normalized avalanche power derating versus pulse duration (Tj = 125 °C). Removed TO-220AB narrow leads package information. page 10/11 STPS40SM120C IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS8940 - Rev 4 page 11/11
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