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STPS5L40RL

STPS5L40RL

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    DO-201AD

  • 描述:

    DIODE SCHOTTKY 40V 5A DO201AD

  • 数据手册
  • 价格&库存
STPS5L40RL 数据手册
® STPS5L40 POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 5A 40 V 150°C 0.44 V FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP FOR HIGHER EFFICIENCY. LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED s s s s DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency inverters. Packaged in DO-201AD, this device is intended for use in low voltage output for small battery chargers & consumer SMPS such as DVD and Set-Top-Box.. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj dV/dt *: Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage (rated VR, Tj = 25°C) Tl = 100°C δ = 0.5 DO-201AD STPS5L40 Value 40 15 5 150 2700 - 65 to + 150 150 10000 Unit V A A A W °C °C V/µs Half wave, single phase tp = 10 ms tp = 1µs Tj = 25°C dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) 1/5 July 2003 - Ed: 2A STPS5L40 THERMAL PARAMETERS Symbol Rth(j-a) Rth(j-l) Junction to ambient Junction to leads Lead length = 10 mm Parameter Value 75 15 Unit °C/W °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Tests conditions Tj = 25°C Tj = 100°C Tj = 125°C VF * Forward voltage drop Tj = 25°C Tj = 100°C Tj = 125°C Pulse test : * tp = 380 µs, δ < 2% Min. Typ. Max. 0.2 Unit mA VR = VRRM 8 25 IF = 5 A 0.44 0.40 0.38 25 75 0.50 0.46 0.44 V To evaluate the maximum conduction losses use the following equation: P = 0.34 x IF(AV) + 0.028 x IF2(RMS) Fig. 1: Conduction losses versus average current. PF(av)(W) 3.5 δ = 0.05 δ = 0.1 δ = 0.2 Fig. 2: Average forward current versus ambient temperature (δ = 0.5). IF(av)(A) 6 δ = 0.5 Rth(j-a)=Rth(j-l) 3.0 2.5 δ=1 5 4 Rth(j-a)=75°C/W 2.0 3 1.5 2 1.0 T T 0.5 1 IF(av)(A) 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 δ=tp/T 5.0 5.5 tp 0 δ=tp/T 0 25 tp Tamb(°C) 50 75 100 125 150 6.0 2/5 STPS5L40 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1µs) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25°C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(µs) 10 100 1000 Tj(°C) 0 0 25 50 75 100 125 150 Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values). IM(A) 18 16 14 12 Ta=25°C Fig. 6: Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a)/Rth(j-a) 1.0 0.9 0.8 0.7 0.6 δ = 0.5 10 8 6 4 IM Ta=100°C Ta=50°C 0.5 0.4 0.3 0.2 0.1 δ = 0.2 δ = 0.1 Single pulse T 2 0 1.E-03 t δ=0.5 t(s) 1.E-02 1.E-01 1.E+00 tp(s) 1.E+00 1.E+01 δ=tp/T 1.E+02 tp 0.0 1.E-01 1.E+03 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). IR(mA) 1.E+02 Tj=150°C Tj=125°C Fig. 8: Junction capacitance versus reverse voltage applied (typical values). C(pF) 1000 F=1MHz Vosc=30mV Tj=25°C 1.E+01 Tj=100°C Tj=75°C 1.E+00 Tj=50°C 100 1.E-01 Tj=25°C 1.E-02 VR(V) 1.E-03 0 5 10 15 20 25 30 35 40 10 1 VR(V) 10 100 3/5 STPS5L40 Fig. 9-1: Forward voltage drop versus forward current (low level). IFM(A) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Tj=125°C (Typical values) Tj=25°C (Maximum values) Tj=125°C (Maximum values) Fig. 9-2: Forward voltage drop versus forward current (high level). IFM(A) 100 Tj=125°C (Maximum values) 10 Tj=125°C (Typical values) Tj=25°C (Maximum values) VFM(V) 1 0.0 0.3 0.5 VFM(V) 0.8 1.0 1.3 1.5 Fig. 10: Thermal resistance junction to ambient versus copper surface under each lead (epoxy printed board FR4, Cu = 35µm). Rth(j-a)(°C/W) 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 9 10 Fig. 11: Thermal resistances versus leads length. Rth(°C/W) 80 70 60 50 40 30 20 Rth(j-l) Rth(j-a): Epoxy printed circuit board FR4 (Cu= 35µm) S(cm²) 10 Lleads(cm) 0 5 10 15 20 25 4/5 STPS5L40 PACKAGE MECHANICAL DATA DO-201AD plastic B A B ØC note 1 E E note 1 ØD ØD note 2 DIMENSIONS REF. A B ∅C ∅D E 25.40 5.30 1.30 1.25 Millimeters Min. Max. 9.50 Inches Min. 1.000 0.209 0.051 0.049 NOTES 1 - The lead diameter ∅ D is not controlled over zone E 2 - The minimum axial length within which the device may be placed with its leads bent at right angles is 0.59"(15 mm) Max. 0.374 Ordering type STPS5L40 STPS5L40RL s Marking STPS5L40 STPS5L40 Package DO-201AD DO-201AD Weight 1.12g 1.12g Base qty 600 1900 Delivery mode Ammopack Tape and reel s WHITE BAND INDICATES CATHODE EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5
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