STSJ100NHS3LL

STSJ100NHS3LL N-channel 30V - 0.0032Ω - 20A - PowerSO-8™ STripFET™III Power MOSFET plus monolithic schottky General features Type VDSS RDS(on) ID STSJ100NHS3LL 30V 0.0042Ω 20A(1) 1. This value is rated accordingly to Rthj-pcb ■ Optimal RDS(on) x Qg trade-off @ 4.5V ■ Reduced switching losses ■ Reduced conduction losses ■ Improved junction-case thermal resistance PowerSO-8 c u d Description This product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology and a propriertary process for integrating a monolithic scottky diode. The new Power MOSFET is optimized for the most demanding synchronous switch function in DC-DC converter for Computer and Telecom. ) s ( ct Applications ■ Switching application e t le ) s t( o r P Internal schematic diagram o s b O - u d o r P e t e l Orderocodes s b O Part number Marking Package Packaging STSJ100NHS3LL 100HS3L- PowerSO-8 Tape & reel July 2006 Rev 3 1/12 www.st.com 12 Contents STSJ100NHS3LL Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.1 Electrical characteristics (curves) ............................. 8 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 c u d e t le ) s ( ct u d o r P e t e l o s b O 2/12 o s b O - o r P ) s t( STSJ100NHS3LL 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS Gate-source voltage ±16 V ID(1) Drain current (continuous) at TC = 25°C 20 A ID (2) Drain current (continuous) at TC=25°C 100 A ID Drain current (continuous) at TC=100°C 12.6 A 80 A Total dissipation at TC = Total dissipation at TC = 25°C(1) 70 3 W W Operating junction temperature Storage temperature -55 to 150 IDM (3) Drain current (pulsed) 25°C(2) PTOT TJ Tstg c u d 1. This value is rated accordingly to Rthj-pcb 2. This value is rated according to Rthj-c 3. Pulse width limited by safe operating area Table 2. Symbol Rthj-c Rthj-pcb e t le Thermal data (1) so Parameter ) s t( °C o r P Value Unit Thermal resistance junction-case max 1.8 °C/W Thermal resistance junction-pcb max 42 °C/W Value Unit Avalanche current, not repetitive (pulse width limited by Tjmax) 10 A Single pulse avalanche energy (starting Tj=25°C, ID=IAV, VDD=24V) 1.8 J ) s ( ct b O - 1. When mounted on 1 inch² FR-4 board, 2oz Cu (t