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STSJ50NH3LL

STSJ50NH3LL

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOIC8_150MIL

  • 描述:

    MOSFET N-CH 30V 12A 8-PWRSOIC

  • 数据手册
  • 价格&库存
STSJ50NH3LL 数据手册
STSJ50NH3LL N-channel 30V - 0.008Ω - 12A - PowerSO-8™ Ultra low gate charge STripFET™ Power MOSFET General features Type STSJ50NH3LL ■ ■ ■ ■ VDSS 30V RDS(on) < 0.0105Ω ID 12A(1) Optimal RDS(on) x Qg trade-off @ 4.5V Reduced switching losses Reduced conduction losses Improved junction-case thermal resistance PowerSO-8™ Description This series utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology, and a propriertary process for integrating a monolithic Scottky diode. The new Power MOSFET is optimized for the most demanding synchronous switch function in DC-DC converter for Computer and Telecom. Internal schematic diagram Applications ■ Switching application DRAIN CONTACT ALSO ON THE BACKSIDE Order codes Part number STSJ50NH3LL Marking 50H3LLPackage PowerSO-8 Packaging Tape & reel April 2006 Rev 5 1/13 www.st.com 13 Contents STSJ50NH3LL Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STSJ50NH3LL Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS(1) VGS(2) ID(4) ID(3) ID(4) ID(3) IDM(5) PTOT TJ Tstg Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=25°C Drain current (continuous) at TC=100°C Drain current (continuous) at TC=100°C Drain current (pulsed) Total dissipation at T C = 25°C Total dissipation at T C = 25°C (4) Operating junction temperature Storage temperature (3) Value 30 ±16 ±18 50 12 31.3 7.5 48 3 50 -55 to 150 Unit V V V A A A A A W W °C 1. Continuous mode 2. Guaranteed for test time < 15ms 3. This value is rated accordingly to Rthj-pcb 4. This value is rated accordingly to Rthj-c 5. Pulse width limited by safe operating area Table 2. Symbol Rthj-c Rthj-pcb(1) Thermal resistance Parameter Thermal resistance junction-case Max Thermal resistance junction-pcb Max Value 2.5 42 Unit °C/W °C/W 1. When mounted on 1 inch² FR-4 board, 2oz Cu (t
STSJ50NH3LL 价格&库存

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