STSJ3NM50

N-CHANNEL 500V - 2.5Ω - 3A PowerSO-8 Zener-Protected MDmesh™ POWER MOSFET TYPE STSJ3NM50 s s s s STSJ3NM50 VDSS 500 V RDS(on) ID(on) x RDS(on)max, ID = 3 A VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. 0.7 140 40 40 4 Max. Unit S pF pF pF Ω 2/8 STSJ3NM50 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 250 V, ID = 1.5 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) VDD = 400 V, ID = 3 A, VGS = 10 V Min. Typ. 7 10 5.5 2.5 2.4 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-Voltage Rise Time Fall Time Cross-Over Time Test Conditions VDD = 480 V, ID = 3 A, RG = 4.7Ω, VGS = 10 V (see test circuit, Figure 3) Min. Typ. 8 9 15 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (4) trr Qrr IRRM trr Qrr IRRM Note: 1. 2. 3. 4. Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions Min. Typ. Max. 3 12 Unit A A V ns nC A ns nC A ISD = 3 A, VGS = 0 ISD = 3, di/dt = 100A/µs, VDD = 100 V, Tj = 25°C (see test circuit, Figure 5) ISD = 3, di/dt = 100A/µs, VDD = 100 V, Tj = 150°C (see test circuit, Figure 5) 210 790 7.5 282 1.1 7.7 1.5 When mounted on 1inch² FR4 Board, 2oz of Cu, t ≤ 10 sec. Pulse width limited by safe operating area ISD