STSJ2NM60

N-CHANNEL 600V - 2.8Ω - 2A PowerSO-8 Zener-Protected MDmesh™ POWER MOSFET TYPE STSJ2NM60 s s s s STSJ2NM60 VDSS 600 V RDS(on) < 3.2 Ω ID 2A s s TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS PowerSO-8 DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS The MDmesh™ family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TA = 25°C (1) Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Total Dissipation at TA = 25°C (1) Derating Factor (1) dv/dt (3) Tstg Tj August 2002 Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature DRAIN CONTACT ALSO ON THE BACKSIDE Value 600 600 ± 30 2 0.37 1.26 8 70 3 0.02 15 – 65 to 150 Unit V V V A A A A W W W/°C V/ns °C IDM (2) PTOT PTOT 1/8 STSJ2NM60 THERMAL DATA Rthj-c Rthj-amb Tj Tstg Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max (1) Max. Operating Junction Temperature Storage Temperature 1.78 42 150 – 65 to 150 °C/W °C/W °C °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20V Min. 600 1 10 ±5 Typ. Max. Unit V µA µA µA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA VGS = 10 V, ID = 1 A Min. 3 Typ. 4 2.8 Max. 5 3.2 Unit V Ω DYNAMIC Symbol gfs (4) Ciss Coss Crss RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Input Resistance f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain Test Conditions VDS > ID(on) x RDS(on)max, ID = 2 A VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. 1.4 160 67 4 3.5 Max. Unit S pF pF pF Ω 2/8 STSJ2NM60 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 300 V, ID = 1 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) VDD = 480 V, ID = 2 A, VGS = 10 V Min. Typ. 13 8 6 1.8 3.3 8.4 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-Voltage Rise Time Fall Time Cross-Over Time Test Conditions VDD = 480 V, ID = 2 A, RG = 4.7Ω, VGS = 10 V (see test circuit, Figure 3) Min. Typ. 12 25 30 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (4) trr Qrr IRRM trr Qrr IRRM Note: 1. 2. 3. 4. Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions Min. Typ. Max. 2 8 Unit A A V ns nC A ns nC A ISD = 2 A, VGS = 0 ISD = 2, di/dt = 100A/µs, VDD = 100 V, Tj = 25°C (see test circuit, Figure 5) ISD = 2, di/dt = 100A/µs, VDD = 100 V, Tj = 150°C (see test circuit, Figure 5) 516 516 2 808 890 2.2 1.5 When mounted on 1inch² FR4 Board, 2oz of Cu, t ≤ 10 sec. Pulse width limited by safe operating area ISD