STD3NM60N

STD3NM60N N-channel 600 V, 1.6 Ω, 3.3 A, MDmesh™ II Power MOSFET in DPAK package Datasheet — preliminary data Features ■ Order codes VDSS @TJmax RDS(on) max. ID STD3NM60N 650 V < 1.8 Ω 3.3 A TAB 100% avalanche tested 3 1 ■ Low input capacitance and gate charge ■ Low gate input resistance DPAK Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram $OR4!" ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging STD3NM60N 3NM60N DPAK Tape and reel May 2012 Doc ID 023056 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/15 www.st.com 15 Contents STD3NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 .............................................. 8 Doc ID 023056 Rev 1 STD3NM60N 1 Electrical ratings Electrical ratings Table 2. Symbol Absolute maximum ratings Value Unit Gate- source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 3.3 A ID Drain current (continuous) at TC = 100 °C 2.5 A IDM (1) Drain current (pulsed) 13 A PTOT Total dissipation at TC = 25 °C 50 W Peak diode recovery voltage slope 15 V/ns - 55 to 150 °C VGS dv/dt(2) TJ Tstg Parameter Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area. 2. ISD ≤ 3.3 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Table 3. Symbol Thermal data Parameter Value Unit Rthj-case Thermal resistance junction-case max 2.5 °C/W Rthj-pcb Thermal resistance junction-pcb max 50 °C/W Table 4. Symbol Avalanche characteristics Parameter Value Unit IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 1 A EAS Single pulse avalanche energy (starting TJ=25 °C, ID=IAR, VDD=50 V) 86 mJ Doc ID 023056 Rev 1 3/15 Electrical characteristics 2 STD3NM60N Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 600 V IDSS Zero gate voltage VDS = 600 V drain current (VGS = 0) VDS = 600 V, TC=125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) ±100 nA 3 4 V 1.6 1.8 Ω Min. Typ. Max. Unit VGS = ± 25 V; VDS=0 VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance Table 6. Symbol 2 VGS = 10 V, ID = 1.65A Dynamic Parameter Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 188 12.8 1.1 - pF pF pF Coss(tr)(1) Output capacitance time related VDS = 0, VGS = 0 - 96.8 - pF Rg Gate input resistance f=1 MHz open drain - 6 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 3.3A, VGS = 10 V (see Figure 15) - 9.5 2 5 - nC nC nC 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 4/15 Doc ID 023056 Rev 1 STD3NM60N Electrical characteristics Table 7. Switching times Symbol Parameter td(on) tr td(off) tf Table 8. Symbol Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 300 V, ID = 1.65 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14) Min. Typ. - 6 9.5 23 31 Max Unit - ns ns ns ns Max Unit - 3.3 13.2 A A 1.6 V Source drain diode Parameter Test conditions Min. Typ. ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 3.3 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 3.3 A, di/dt = 100 A/µs VDD= 60 V (see Figure 16) - 200 910 9.1 ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 3.3 A, di/dt = 100 A/µs VDD= 60 V TJ = 150 °C (see Figure 16) - 236 1073 9.1 ns nC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 023056 Rev 1 5/15 Electrical characteristics STD3NM60N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM11293v1 ID (A) Tj=150°C Tc=25°C Single pulse 10 10µs is ea ) ar on s DS( i th R in ax n io y m t b ra pe ed O imit L 1 100µs 1ms 10ms 0.1 0.01 0.1 Figure 4. 10 1 100 VDS(V) Output characteristics AM11294v1 ID (A) VGS=10V 5 AM11295v1 ID (A) VGS=20V 5 4 6V 4 3 3 2 2 1 5V 0 0 Figure 6. 4 8 12 16 20 VDS(V) 1 0 0 Gate charge vs gate-source voltage Figure 7. AM11296v1 VDS VGS (V) 12 (V) VDD=480V ID=3.3A VDS 500 10 2 4 8 6 VGS(V) Static drain-source on-resistance AM11297v1 RDS(on) (Ω) VGS=10V 1.66 400 1.62 8 300 6 1.58 200 4 100 2 0 0 6/15 2 4 6 8 10 0 Qg(nC) 1.54 1.50 0 Doc ID 023056 Rev 1 0.5 1 1.5 2 2.5 3 ID(A) STD3NM60N Figure 8. Electrical characteristics Capacitance variations Figure 9. AM11298v1 C (pF) Output capacitance stored energy AM11299v1 Eoss (µJ) 1.6 1000 Ciss 1.2 100 0.8 10 Coss 1 0.1 Figure 10. 1 Crss VDS(V) 100 10 0.4 0 0 200 100 300 400 500 VDS(V) Normalized gate threshold voltage Figure 11. Normalized on-resistance vs. vs. temperature temperature AM11300v1 VGS(th) 1.02 2.0 0.94 1.6 0.86 1.2 0.78 0.8 0.70 -50 50 0 TJ(°C) 100 Figure 12. Source-drain diode forward characteristics 0.4 -50 ID=1.65A 0 50 TJ(°C) AM09028v1 VDS (norm) TJ=-50°C ID=1mA 1.10 1.2 100 Figure 13. Normalized VDS vs. temperature AM11303v1 VSD (V) AM11301v1 RDS(on) (norm) ID=250µA (norm) TJ=25°C 1.08 1.1 1.06 1.0 1.04 TJ=150°C 0.9 1.02 0.8 1.00 0.98 0.7 0.96 0.6 0.5 0 0.5 1 1.5 2 2.5 3 ISD(A) 0.94 0.92 -50 -25 Doc ID 023056 Rev 1 0 25 50 75 100 TJ(°C) 7/15 Test circuits 3 STD3NM60N Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 18. Unclamped inductive waveform AM01471v1 Figure 19. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/15 0 Doc ID 023056 Rev 1 10% AM01473v1 STD3NM60N 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 023056 Rev 1 9/15 Package mechanical data Table 9. STD3NM60N DPAK (TO-252) mechanical data mm Dim. Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 1.50 L1 2.80 L2 0.80 L4 0.60 R V2 10/15 Typ. 1 0.20 0° 8° Doc ID 023056 Rev 1 STD3NM60N Package mechanical data Figure 20. DPAK (TO-252) drawing 0068772_I Figure 21. DPAK footprint(a) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 AM08850v1 a. All dimensions are in millimeters Doc ID 023056 Rev 1 11/15 Packaging mechanical data 5 STD3NM60N Packaging mechanical data Table 10. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 12/15 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Doc ID 023056 Rev 1 18.4 22.4 STD3NM60N Packaging mechanical data Figure 22. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 23. Reel for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID 023056 Rev 1 13/15 Revision history 6 STD3NM60N Revision history 12 Table 11. 14/15 Document revision history Date Revision 10-May-2012 1 Changes First release Doc ID 023056 Rev 1 STD3NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 023056 Rev 1 15/15