STP4NM60
STD3NM60, STD3NM60-1
N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK
Zener-protected MDmesh™ Power MOSFET
Features
Type
VDSS
RDS(on)
(@Tjmax)
max
ID
PW
STD3NM60
3
STD3NM60-1
< 1.5 Ω
650
STP4NM60
3A
42 W
4A
69 W
High dv/dt and avalanche capabilities
■
Improved ESD capability
■
Low input capacitance and gate charge
■
Low gate input resistance
■
Tight process control and high manufacturing
yields
Description
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Figure 1.
Applications
2
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(s
Switching
1
DPAK
u
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TO-220
■
■
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3
1
Pr
3
2
1
IPAK
Internal schematic diagram
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Modems technology applies the benefits of the
multiple drain process to STMicroelectronics' wellknown PowerMESH™ horizontal layout structure.
The resulting product offers low on-resistance,
high dv/dt capability and excellent avalanche
characteristics.
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Table 1.
Device summary
Order code
Marking
Package
Packing
STD3NM60
D3NM60
DPAK
Tape and reel
STD3NM60-1
D3NM60
IPAK
Tube
STP4NM60
P4NM60
TO-220
Tube
September 2009
Doc ID 8370 Rev 4
1/17
www.st.com
17
Contents
STD3NM60, STD3NM60-1, STP4NM60
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuits
.............................................. 9
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
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Doc ID 8370 Rev 4
STD3NM60, STD3NM60-1, STP4NM60
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
STD3NM60
STD3NM60-1
STP4NM60
VDS
Drain-source voltage (VGS= 0)
600
V
VGS
Gate- source Voltage
± 30
V
ID
Drain current (continuous) at TC= 25°C
4
3
ID
Drain current (continuous) at TC= 100°C
2.52
1.9
IDM
(1)
PTOT
Drain current (pulsed)
16
Total dissipation at TC= 25°C
69
Derating factor
dv/dt (2)
Tj
Tstg
ct
du
12
o
r
P
0.55
ete
Peak diode recovery voltage slope
ol
Operating junction temperature
Storage temperature
1. Pulse width limited by safe operating area
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(s)
A
A
A
42
W
0.33
W/°C
15
V/ns
°C
-65 to 150
°C
2. ISD ≤3 A, di/dt ≤400 µA, VDD ≤V(BR)DSS, Tj ≤TJMAX.
Table 3.
Symbol
od
Value
Parameter
Unit
To-220
DPAK / IPAK
1.82
3
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
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Thermal data
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Table 4.
Symbol
°C/W
Avalanche characteristics
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive (pulse
width limited by Tjmax)
1.5
A
EAS
Single pulse avalanche energy
(starting Tj= 25 °C, ID= IAR, VDD= 50 V)
200
mJ
Doc ID 8370 Rev 4
3/17
Electrical characteristics
2
STD3NM60, STD3NM60-1, STP4NM60
Electrical characteristics
(TCASE= 25 °C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
V(BR)DSS
Drain-source
breakdown voltage
ID = 250 µA, VGS =0
600
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max rating
VDS = max rating,
TC = 125°C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 1.5 A
Table 6.
Forward
transconductance
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
td(on)
tr
td(off)
tf
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Qg
Qgs
Qgd
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Pr
V
±5
µA
4
5
V
1.3
1.5
Ω
Min.
Typ.
Max.
Unit
VDS = 15 V , ID = 1.5 A
-
2.7
-
S
VDS = 25 V, f = 1 MHz,
VGS = 0
-
324
132
7.4
-
pF
pF
pF
-
ns
ns
ns
ns
)
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Test conditions
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Unit
µA
µA
Parameter
gfs (1)
Max.
1
10
Dynamic
Symbol
Typ.
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300 V, ID = 1.5 A
RG = 4.7 Ω VGS = 10 V
(see Figure 15)
-
9
4
16.5
10.5
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 3 A,
VGS = 10V
(see Figure 21)
-
10
3
4.7
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Doc ID 8370 Rev 4
14
nC
nC
nC
STD3NM60, STD3NM60-1, STP4NM60
Table 7.
Source drain diode
Symbol
Parameter
ISDM (1)
Source-drain current
Source-drain current
(pulsed)
VSD (2)
Forward on voltage
ISD
trr
Qrr
IRRM
trr
Qrr
IRRM
Electrical characteristics
Test conditions
Min.
ISD = 3 A, VGS = 0
Typ.
Max.
Unit
-
3
12
A
A
-
1.5
V
Reverse recovery time
ISD = 3 A, di/dt = 100 A/µs,
Reverse recovery charge VDD = 100 V, Tj = 25°C
Reverse recovery current (see Figure 17)
-
224
1
9
Reverse recovery time
ISD = 3 A, di/dt = 100 A/µs,
Reverse recovery charge VDD = 100 V, Tj = 150°C
Reverse recovery current (see Figure 17)
-
296
1.4
9.3
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Gate-source Zener diode (1)
Symbol
BVGSO
Parameter
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Test conditions
Gate-source breakdown
voltage
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ns
µC
A
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1. Pulse width limited by safe operating area.
Table 8.
ns
nC
A
bs
Igs=± 1mA (open drain)
Min.
Typ.
Max.
Unit
30
-
-
V
O
)
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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Doc ID 8370 Rev 4
5/17
Electrical characteristics
STD3NM60, STD3NM60-1, STP4NM60
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220
Figure 3.
Thermal impedance for TO-220
)
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Figure 4.
Safe operating area for DPAK and
IPAK
)
(s
Figure 5.
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Thermal impedance for DPAK and
IPAK
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let
Figure 6.
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Output characterisics
Figure 7.
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Doc ID 8370 Rev 4
Transfer characteristics
STD3NM60, STD3NM60-1, STP4NM60
Figure 8.
Electrical characteristics
Transconductance
Figure 9.
Static drain-source on resistance
)
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Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
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Figure 12. Normalized gate threshold voltage
vs temperature
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Figure 13. Normalized on resistance vs
temperature
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Electrical characteristics
STD3NM60, STD3NM60-1, STP4NM60
Figure 14. Source-drain diode forward
characteristics
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STD3NM60, STD3NM60-1, STP4NM60
3
Test circuits
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
µF
2200
RL
µF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
µF
D.U.T.
)
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(
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VG
2.7kΩ
c
u
d
PW
47kΩ
1kΩ
PW
D.U.T.
AM01468v1
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AM01469v1
Figure 17. Test circuit for inductive load
Figure 18. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
A
D
G
S
s
(
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c
3.3
µF
B
25 Ω
D
1000
µF
RG
S
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2200
µF
3.3
µF
VDD
ID
Vi
D.U.T.
Pw
let
AM01470v1
Figure 19. Unclamped inductive waveform
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VD
VDD
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G
so
)-
L=100µH
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AM01471v1
Figure 20. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
Doc ID 8370 Rev 4
10%
AM01473v1
9/17
Test circuits
STD3NM60, STD3NM60-1, STP4NM60
Figure 21. Gate charge waveform
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
)
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Qgd
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STD3NM60, STD3NM60-1, STP4NM60
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
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Package mechanical data
STD3NM60, STD3NM60-1, STP4NM60
TO-220 type A mechanical data
mm
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Typ
Max
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
)
s
(
ct
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
u
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bs
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)
3.75
2.65
r
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10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
16.40
28.90
3.85
2.95
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0015988_Rev_S
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Doc ID 8370 Rev 4
STD3NM60, STD3NM60-1, STP4NM60
Package mechanical data
TO-252 (DPAK) mechanical data
mm.
DIM.
min.
ty p
ma x .
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
)
s
(
ct
6.20
D1
5.10
E
6.40
6.60
E1
4. 70
e
u
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2.28
e1
4.40
H
9.35
L
1
t
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L1
2.80
L2
0.80
L4
0.60
R
0o
V2
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)
(s
s
b
O
4.60
10.10
1
0.20
8o
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0068772_G
Doc ID 8370 Rev 4
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Package mechanical data
STD3NM60, STD3NM60-1, STP4NM60
TO-251 (IPAK) mechanical data
mm.
DIM.
min.
typ
max.
A
2.20
2.40
A1
0.90
1.10
b
0.64
0.90
5.20
5.40
b2
0.95
b4
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
E
6.40
6.60
e
)
s
(
ct
u
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2.28
e1
4.40
H
r
P
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16.10
L
9.00
(L1)
0.80
t
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L2
V1
)
(s
s
b
O
4.60
9.40
1.20
0.80
10 o
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Doc ID 8370 Rev 4
STD3NM60, STD3NM60-1, STP4NM60
5
Packaging mechanical data
Packaging mechanical data
D 2 PAK FOOTPRINT
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TAPE AND REEL SHIPMENT
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TAPE MECHANICAL DATA
e
t
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ol
DIM.
O
bs
mm
inch
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
MAX.
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
0.933 0.956
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Revision history
6
STD3NM60, STD3NM60-1, STP4NM60
Revision history
Table 9.
Document revision history
Date
Revision
14-Jan-2004
3
02-Sep-2009
4
Changes
Inserted VDSS value @ Tjmax = 150 °C on cover page
Document reformatted to improve readability
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STD3NM60, STD3NM60-1, STP4NM60
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Please Read Carefully:
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Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
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Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
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UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
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Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
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ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
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