STD2NM60T4

STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh™Power MOSFET TYPE VDSS RDS(on) ID STD2NM60 STD2NM60-1 600V 600V < 3.2 Ω < 3.2 Ω 2A 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS ■ ■ ■ ■ ■ ■ DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products. u d o ) s ( ct 3 1 DPAK TO-252 e t e l o s b c u d o r P 2 1 ) s t( IPAK TO-251 c u d o r P INTERNAL SCHEMATIC DIAGRAM O ) s ( t c ) s ( t 3 e t le o s b O - APPLICATIONS The MDmesh™ family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies. r P e t e l o u d o ABSOLUTE MAXIMUM RATINGS bs r P e Symbol O VDS VGS bs O Parameter Unit 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage t e l o VDGR ID Value Drain-source Voltage (VGS = 0) ID IDM (●) PTOT ±30 V Drain Current (continuous) at TC = 25°C 2 A Drain Current (continuous) at TC = 100°C 1.26 A Drain Current (pulsed) 8 A Total Dissipation at TC = 25°C 46 W Derating Factor VESD(G-S) dv/dt(1) Tstg Tj 0.37 W/°C Gate source ESD(HBM-C=100pF, R=1.5KΩ) 1 kV Peak Diode Recovery voltage slope 15 V/ns –65 to 150 °C 150 °C Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area September 2002 (1)ISD