STSJ80N4LLF3

STSJ80N4LLF3 N-channel 40V - 0.0042Ω - 18A - PowerSO-8™ STripFET™III Power MOSFET for DC-DC conversion General features Type STSJ80N4LLF3 VDSS 40V RDS(on) 0.005Ω ID 18A(1) 1. This value is rated according to Rthj-pcb ■ ■ ■ ■ Optimal RDS(on) x Qg trade-off @ 4.5V Switching losses reduced Low threshold device Improved junction-case thermal resistance PowerSO-8 Description This series of product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This process coupled to unique metallization techniques realizes the most advanced low voltage Power MOSFET in SO-8 ever produced. The exposed slug reduces the Rthj-c improving the current capability. Internal schematic diagram Applications ■ Switching application DRAIN CONTACT ALSO ON THE BACKSIDE Order codes Part number STSJ80N4LLF3 Marking 80N4LLPackage PowerSO-8 Packaging Tape & reel November 2006 Rev 3 1/12 www.st.com 12 Contents STSJ80N4LLF3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STSJ80N4LLF3 Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS VGS (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate- source voltage Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Total dissipation at TC = 25°C Maximum operating junction temperature Storage temperature Value 40 ± 16 ±18 80 18 50 72 70 3 -55 to 150 Unit V V V A A A A W W °C ID (2) ID ID (3) (2) (4) IDM Ptot(2) Ptot(3) Tj Tstg 1. Guaranteed for test time < 15ms 2. This value is rated according to Rthj-c 3. This value is rated according to Rthj-pcb 4. Pulse with limited by safe operating area Table 2. Symbol Rthj-c Rthj-pcb (1) Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-pcb max Value 1.8 42 Unit °C/W °C/W 1. When mounted on 1 inch² FR-4 board, 2oz Cu (t