STTA3006CP

® STTA3006CW/CP TURBOSWITCH ™ ULTRA-FAST HIGH VOLTAGE DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) 2 x 15A 600V A2 A1 K 35ns 1.6V FEATURES AND BENEFITS SPECIFICTO ”FREEWHEEL MODE”OPERATIONS: FREEWHEEL OR BOOSTER DIODE. ULTRA-FAST AND SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY OPERATIONS. A2 K A1 K A1 A2 TO-247 STTA3006CW SOT93 STTA3006CP DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all ”freewheel mode” operations and is particularly suitable and efficient in motor ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM VRSM IF(RMS) IFRM IFSM Tj T stg Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current Repetitive peak forward current Surge non repetitive forward current Storage temperature range tp = 5 µs F = 5kHz square tp=10 ms sinusoidal Value 600 600 30 200 230 150 -65 to 150 Unit V V A A A °C °C control freewheelapplicationsand in booster diode applications in power factor control circuitries. Packaged either in TO-247 or SOT93, these 600V devices are particularly intended for use on 240V domestic mains. Maximum operating junction temperature TM : TURBOSWITCH is a trademark of STMicroelectronics November 1999 Ed : 4B 1/8 STTA3006CW/CP THERMAL AND POWER DATA Symbol Rth(j-c) Parameter Junction to case Test conditions Per diode Total Coupling Per diode IF(AV) = 30A δ =0.5 Tc= 110 °C Per diode Tc=105°C Value 1.9 1.0 0.1 20.5 Unit °C/W P1 Conduction power dissipation W Pmax Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) 22.5 W STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VF * IR ** Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance Test conditions IF =15A VR =0.8 x VRRM Ip < 3.IAV Tj = 25°C Tj = 125 °C Tj = 25°C Tj = 125 °C Tj = 125 °C Min Typ 1.3 2 Max 1.8 1.6 100 5 1.06 177 Unit V V µA mA V mΩ Vto rd Test pulse : * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS (per diode) TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Test conditions Tj = 25°C Irr = 0.25A IF = 0.5 A IR = 1A IF = 1A dIF/dt =-50A/µs VR = 30V IF = 15A 12.5 17.5 IF = 15A 0.5 / Min Typ 35 65 A Max Unit ns IRM Maximum Tj = 125 °C VR = 400V reverse recovery dIF/dt = -120 A/µs dIF/dt = -500 A/µs current Softness factor Tj = 125 °C VR = 400V dIF/dt = -500 A/µs S factor TURN-ON SWITCHING Symbol tfr Parameter Forward recovery time Peak forward voltage Test conditions Tj = 25°C IF = 15A, dIF/dt = 120 A/µs measured at, 1.1 × VFmax Tj = 25°C IF = 15A, dIF/dt = 120 A/µs Min Typ Max 500 V 9 Unit ns VFp 2/8 STTA3006CW/CP Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current (maximum values). VFM(V) δ = 0.1 δ = 0.2 δ = 0.5 P1(W) 25 20 δ= 1 200 100 Tj=125°C 15 10 T 10 5 IF(av) (A) 0 0 2 4 6 8 10 12 δ=tp/T tp IFM(A) 18 14 16 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Fig. 3: Relative variation of thermal transient impedance junction to case versus pulse duration. K 1.0 K= Zth(j-c) (tp, δ) Rth(j-c) Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) 45 40 35 30 VR=400V Tj=125 °C IF=IF(av) IF=2*IF(a v) 0.8 0.6 0.4 0.2 δ = 0.5 25 20 IF=0.5*IF(a v) δ = 0.2 δ = 0.1 Single pulse T 15 10 5 0 0 100 200 300 tp(s) 1E-2 δ=tp/T tp dIF/dt(A/ µs) 400 500 600 700 800 900 1000 0.0 1E-4 1E-3 1E-1 1E+0 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). trr(ns) 200 180 160 140 120 100 80 60 40 20 0 VR=400V Tj=125°C IF=2*IF(a v) IF=IF(av) Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values). S factor 1.0 0.8 0.6 0.4 IF