STTA5012TV2

® STTA2512P STTA5012TV1/2 TURBOSWITCH ™ ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) 25A 1200V 60ns 1.9V K1 A1 K2 A1 K2 A2 A2 K1 STTA5012TV1 STTA5012TV2 FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATION. HIGH REVERSE VOLTAGE CAPABILITY. LOW INDUCTANCE PACKAGE < 5 nH. INSULATED PACKAGE : ISOTOPTM Electrical insulation : 2500VRMS Capacitance : < 45pF. K ISOTOPTM A K SOD93 STTA2512P DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IFRM IFSM T stg Tj Parameter Repetitive peak reverse voltage RMS forward current Repetitive peak forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 5 µs F = 5kHz square tp = 10ms sinusoidal Value 1200 50 300 210 - 65 to + 150 150 Unit V A A A °C °C operations. They are particularly suitable in Motor Control circuitries, or in the primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitable for secondary of SMPS as high voltage rectifier diodes. ISOTOP and TURBOSWITCH are trademarks of STMicroelectronics. November 1999 - Ed: 4B 1/9 STTA2512P / STTA5012TV1/2 THERMAL AND POWER DATA (per diode) Symbol Rth(j-c) Parameter Junction to case thermal resistance Coupling thermal resistance Conduction power dissipation IF(AV) = 25A δ =0.5 Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) Conditions Per diode Total Coupling Tc= 70°C Tc= 82°C Tc= 62°C Tc= 75°C Value 1.4 0.75 1.2 0.1 57 62.5 °C/W W W Unit °C/W ISOTOP ISOTOP SOD93 ISOTOP ISOTOP SOD93 ISOTOP SOD93 Rth(c) P1 Pmax STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VF * IR ** Vto Rd Test pulses : Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance * tp = 380 µs, δ < 2% ** tp = 5 ms , δ < 2% Test conditions IF =25A VR =0.8 x VRRM Ip < 3.IF(AV) Tj = 25°C Tj = 125 °C Tj = 25°C Tj = 125 °C Tj = 125 °C Min Typ 1.3 2.0 Max 2.1 1.9 150 8 1.52 15 Unit V V µA mA V mΩ To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + Rd x I F2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS (per diode) TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Tj = 25°C Irr = 0.25A IF = 0.5 A IR = 1A IF = 1 A dIF/dt =-50A/µs VR =30V Tj = 125 °C VR = 600V dIF/dt = -200 A/µs dIF/dt = -500 A/µs Tj = 125 °C VR = 600V dIF/dt = -500 A/µs IF =25A 35 45 IF =25A 1.2 / Min Typ 60 110 A Max Unit ns IRM S factor TURN-ON SWITCHING Symbol tfr Parameter Forward recovery time Test conditions Tj = 25°C IF =25 A, dIF/dt = 200 A/µs measured at 1.1 × VFmax Tj = 25°C IF =25A, dIF/dt = 200 A/µs IF =40A, dIF/dt = 500 A/µs Min Typ Max 900 V 30 35 Unit ns VFp Peak forward voltage 2/9 STTA2512P / STTA5012TV1/2 Fig. 1: Conduction losses versus average current (per diode). P1(W) 60 50 40 30 20 10 IF(av) (A) 0 0 5 10 15 20 δ=tp/T δ=1 δ = 0.1 δ = 0.2 δ = 0.5 Fig. 2: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 300 Tj=125°C 100 10 T tp VFM(V) 30 25 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Fig. 3-1: Relative variation of thermal impedance junction to case versus pulse duration (per diode) (ISOTOP). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 δ = 0.5 Fig. 3-2: Relative variation of thermal impedance junction to case versus pulse duration (SOD93). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 δ = 0.5 0.4 δ = 0.2 0.4 δ = 0.2 δ = 0.1 Single pulse 0.2 0.2 δ = 0.1 tp(s) 1E-2 1E-1 1E+0 5E+0 0.0 1E-4 Single pulse tp(s) 1E-2 1E-1 1E+0 0.0 1E-3 1E-3 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence, per diode). IRM(A) 55 50 45 40 35 30 25 20 15 10 5 0 VR=600V Tj=125°C IF=2*IF(av) IF=IF(av) Fig. 5: Reverse recovery time versus dIF/dt (90% confidence, per diode). trr(ns) 500 450 400 350 300 250 200 150 100 50 0 VR=600V Tj=125°C IF=2*IF(av) IF=IF(av) IF=0.5*IF(av) IF=0.5*IF(av) dIF/dt(A/µs) 0 100 200 300 400 500 dIF/dt(A/µs) 0 100 200 300 400 500 3/9 STTA2512P / STTA5012TV1/2 Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values, per diode). S factor 1.60 Tj=125°C IF