STTH12012TV2

STTH12012TV Ultrafast recovery - 1200 V diode Main product characteristics K2 A2 A2 K1 IF(AV) VRRM Tj VF (typ) trr (typ) 2 x 60 A 1200 V 150° C K1 A1 K2 A1 1.30 V 50 ns STTH12012TV A1 K1 A2 K2 STTH12012TV2 A1 K2 K1 A2 Features and benefits ■ ■ ■ ■ ■ ■ Ultrafast, soft recovery Very low conduction and switching losses High frequency and/or high pulsed current operation High reverse voltage capability High junction temperature Insulated package: Electrical insulation = 2500 VRMS Capacitance = 45 pF ISOTOP Order codes Part Number STTH12012TV1 STTH12012TV2 Marking STTH12012TV1 STTH12012TV2 Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. March 2006 Rev 1 www.st.com 1/8 8 Characteristics STTH12012TV 1 Table 1. Symbol VRRM IF(RMS) IF(AV) IFRM IFSM Tstg Tj Characteristics Absolute ratings (limiting values per diode at 25° C, unless otherwise specified) Parameter Repetitive peak reverse voltage RMS forward current Average forward current, δ = 0.5 Repetitive peak forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tc = 45° C per diode tp = 5 µs, F = 5 kHz square tp = 10 ms Sinusoidal Value 1200 150 60 600 420 -65 to + 150 150 Unit V A A A A °C °C Table 2. Thermal parameters Symbol Rth(j-c) Rth(c) Parameter Per diode Junction to case Total Coupling thermal resistance 0.42 0.1 °C/W Value 0.74 Unit When the diodes are used simultaneously: ∆Tj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 3. Symbol IR(1) Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25° C Tj = 125° C Tj = 25° C VR = VRRM Min. Typ Max. 30 µA 30 300 2.25 IF = 60 A 1.35 1.30 2.05 1.95 V Unit VF(2) Forward voltage drop Tj = 125° C Tj = 150° C 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 1.50 x IF(AV) + 0.0075 IF2(RMS) 2/8 STTH12012TV Table 4. Symbol Characteristics Dynamic characteristics Parameter Test conditions IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25° C Min. Typ Max. 125 63 50 32 1 750 4.5 ns V 85 70 45 A ns Unit trr Reverse recovery time IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25° C IF = 1 A, dIF/dt = -200 A/µs, VR = 30 V, Tj = 25° C IRM S tfr VFP Reverse recovery current Softness factor Forward recovery time Forward recovery voltage IF = 60 A, dIF/dt = -200 A/µs, VR = 600 V, Tj = 125° C IF = 60 A, dIF/dt = -200 A/µs, VR = 600 V, Tj = 125° C dIF/dt = 100 A/µs IF = 60 A VFR = 1.5 x VFmax, Tj = 25° C IF = 60 A, dIF/dt = 100 A/µs, Tj = 25° C Figure 1. P(W) 160 Conduction losses versus average current δ=0.05 δ=0.1 δ=0.2 δ=0.5 δ=1 Figure 2. IFM(A) 200 180 160 140 Forward voltage drop versus forward current Tj=150°C (Maximum values) 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 T 120 100 80 60 40 Tj=150°C (Typical values) Tj= 25 °C (Maximum values) IF(AV)(A) δ=tp/T tp 20 0 0.0 0.5 1.0 1.5 2.0 2.5 VFM(V) 3.0 3.5 4.0 3/8 Characteristics STTH12012TV Figure 3. Relative variation of thermal impedance junction to case versus pulse duration Figure 4. Peak reverse recovery current versus dIF/dt (typical values) Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.E-03 1.E-02 1.E-01 10 Single pulse IRM(A) 80 70 60 50 40 30 20 IF=0.5 x IF(AV) VR=600V Tj=125°C IF= 2 x IF(AV) IF= IF(AV) tp(s) 0 dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 1.E+00 1.E+01 Figure 5. trr(ns) 1000 900 Reverse recovery time versus dIF/dt (typical values) VR=600V Tj=125°C IF= 2 x IF(AV) Figure 6. Qrr(µC) 12 10 8 VR=600V Tj=125°C Reverse recovery charges versus dIF/dt (typical values) IF= 2 x IF(AV) 800 700 600 500 400 300 IF=0.5 x IF(AV) IF= IF(AV ) IF= IF(AV) 6 IF=0.5 x IF(AV) 4 2 dIF/dt(A/µs) 200 0 50 100 150 200 250 300 350 400 450 500 0 0 50 100 150 200 dIF/dt(A/µs) 250 300 350 400 450 500 Figure 7. Softness factor versus dIF/dt (typical values) Figure 8. Relative variations of dynamic parameters versus junction temperature IF = IF(AV) VR=600V Reference: Tj=125°C S factor 2.00 1.75 1.50 1.25 1.00 0.75 IF = 2 x IF(AV) VR=600V Tj=125°C 2.00 1.75 Sfactor 1.50 1.25 1.00 0.75 0.50 0.25 QRR IRM tRR dIF/dt(A/µs) 0.50 0 50 100 150 200 250 300 350 400 450 500 Tj(°C) 50 75 100 125 0.00 25 4/8 STTH12012TV Characteristics Figure 9. VFP(V) 25 IF = IF(AV) Tj=125°C Transient peak forward voltage versus dIF/dt (typical values) Figure 10. Forward recovery time versus dIF/dt (typical values) tfr(ns) 1400 1200 1000 IF = IF(AV) VFR = 1.5 x V F max. Tj=125°C 20 15 800 600 400 10 5 dIF/dt(A/µs) 0 0 100 200 300 400 500 200 dIF/dt(A/µs) 0 0 100 200 300 400 500 Figure 11. Junction capacitance versus reverse voltage applied (typical values) C(pF) 1000 F=1MHz Vosc=30mVRMS Tj=25°C 100 VR(V) 10 1 10 100 1000 5/8 Package mechanical data STTH12012TV 2 Package mechanical data Epoxy meets UL94, V0 Cooling method: by conduction (C) Table 5. ISOTOP dimensions DIMENSIONS REF. E G2 C Millimeters Min. Max 12.20 9.10 8.20 0.85 2.05 38.20 31.70 25.50 24.15 Inches Min. 0.465 0.350 0.307 0.030 0.077 1.488 1.240 0.990 0.939 Max. 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951 A A1 11.80 8.90 7.8 0.75 1.95 37.80 31.50 25.15 23.85 A A1 C2 E2 F1 F B C C2 D D1 P1 E E1 D S G D1 E2 G 24.80 typ. 14.90 12.60 3.50 4.10 4.60 4.00 4.00 30.10 15.10 12.80 4.30 4.30 5.00 4.30 4.40 30.30 0.976 typ. 0.587 0.496 0.138 0.161 0.181 0.157 0.157 1.185 0.594 0.504 0.169 0.169 0.197 0.69 0.173 1.193 B G1 G2 ØP G1 E1 F F1 P P1 S In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 6/8 STTH12012TV Ordering information 3 Ordering information Part Number STTH12012TV1 STTH12012TV2 Marking STTH12012TV1 STTH12012TV2 Package ISOTOP ISOTOP Weight 27 g 27 g Base qty 10 10 Delivery mode Tube Tube 4 Revision history Date 02-Mar-2006 Revision 1 First issue. Description of Changes 7/8 STTH12012TV Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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