STTH1302CT

® STTH1302CT/CG/CFP HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) 2 x 6.5 A 200 V 175 °C 0.95 V 25 ns A1 K A2 K FEATURES AND BENEFITS Suited for SMPS Low losses Low forward and reverse recovery times High surge current capability High junction temperature Insulated package: TO-220FPAB: Insulation voltage = 2000 VDC Capacitance = 12 pF s s s s s s K A1 A2 K TO-220AB STTH1302CT A2 A1 D2PAK STTH1302CG A2 K A1 DESCRIPTION Dual center tap rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. This device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) RMS forward current Average forward current δ = 0.5 TO-220AB / D PAK TO-220FPAB IFSM Tstg Tj Surge non repetitive forward current Storage temperature range Maximum operating junction temperature 2 TO-220FPAB STTH1302CFP Parameter Repetitive peak reverse voltage Tc = 155°C Tc = 145°C Tc = 135°C Tc = 110°C Per diode Per device Per diode Per device Value 200 20 6.5 13 6.5 13 70 - 65 to + 175 175 Unit V A A A A °C °C tp = 10 ms sinusoïdal August 2002 - Ed: 1A 1/7 STTH1302CT/CG/CFP THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter TO-220AB / D PAK TO-220FPAB TO-220AB / D PAK TO-220FPAB Rth (c) Coupling TO-220AB / D PAK TO-220FPAB When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * V F* Parameter Reverse leakage Current Forward Voltage drop Tests Conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Pulse test : * tp = 380 µs, δ < 2% 2 2 2 Value Per diode Total 3 5.5 1.9 4.5 0.8 3.5 Unit °C/W °C/W °C/W Min. Typ. 3 Max. 6 60 1.1 Unit µA V VR = VRRM IF = 6.5 A IF = 6.5 A IF = 13 A IF = 13 A 0.95 0.81 0.95 1.25 1.1 To evaluate the conduction losses use the following equation : P = 0.80 x IF(AV) + 0.023 x IF2(RMS) DYNAMIC CHARACTERISTICS (per diode) Symbol trr Parameter Reverse recovery time Test Conditions Tj = 25°C IF = 0.5 A Irr = 0.25 A IR = 1 A IF = 6.5 A dIF/dt = 100 A/µs VFR = 1.1 x VF max IF = 6.5 A dIF/dt = 100 A/µs Min. Typ. 16 Max. 25 Unit ns tfr Forward recovery time Tj = 25°C 70 ns VFP Forward recovery voltage Tj = 25°C 2.2 V 2/7 STTH1302CT/CG/CFP Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(AV)(W) 8 δ = 0.1 δ = 0.2 δ = 0.5 Fig. 2: Peak current versus factor (per diode). IM(A) 60 IM T 7 6 5 4 3 δ = 0.05 δ=1 50 δ=tp/T 40 tp 30 P=10W P=5W P=2W 20 2 1 0 0 1 2 3 4 5 6 T IF(AV)(A) 10 δ=tp/T 7 tp 8 0 0.0 0.1 0.2 0.3 0.4 δ 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 3: Forward voltage drop versus forward current (per diode). IFM(A) 100.0 Tj=125°C Typical values Fig. 4-1: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AB / D2PAK). Zth(j-c) / Rth(j-c) 1.0 δ = 0.5 10.0 Tj=125°C Maximum values δ = 0.2 Tj=25°C Maximum values δ = 0.1 1.0 Single pulse T VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0.1 1.E-03 1.E-02 tp(s) 1.E-01 δ=tp/T tp 1.E+00 Fig. 4-2: Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB). Zth(j-c) / Rth(j-c) 1.0 Fig. 5-1: Non repetitive surge peak forward current versus overload duration per diode (TO-220AB / D2PAK). IM(A) 100 90 80 δ = 0.5 δ = 0.2 δ = 0.1 70 60 50 40 TC=125°C TC=25°C TC=75°C 30 Single pulse T 20 IM t tp(s) 0.1 1.E-02 1.E-01 1.E+00 δ=tp/T tp 10 0 1.E-03 δ=0.5 t(s) 1.E-02 1.E-01 1.E+00 1.E+01 3/7 STTH1302CT/CG/CFP Fig. 5-2: Non repetitive surge peak forward current versus overload duration per diode (TO-220FPAB). IM(A) 70 60 50 40 30 TC=125°C TC=25°C Fig. 6: Average forward current versus ambient temperature (δ=0.5, per diode). IF(AV)(A) 8 7 6 5 4 3 2 D²PAK (S=1cm²) Rth(j-a)=50°C/W TO-220FPAB Rth(j-a)=Rth(j-c) TO-220AB/D²PAK TC=75°C 20 10 0 1.E-03 IM 1 t δ=0.5 t(s) 0 Tamb(°C) 1.E-01 1.E+00 0 25 50 75 100 125 150 175 1.E-02 Fig. 7: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 100 F=1MHz VOSC=30VRMS Tj=25°C Fig. 8: Reverse recovery charges versus dIF/dt (90% confidence, per diode). QRR(nC) 240 220 200 180 160 140 120 100 80 Tj=25°C Tj=125°C IF=6.5A VR=200V 60 40 VR(V) 10 1 10 100 1000 20 0 10 dIF/dt(A/µs) 100 1000 Fig. 9: Reverse recovery time versus dIF/dt (90% confidence, per diode). trr(ns) 80 70 60 50 40 30 20 Tj=25°C Tj=125°C IF=6.5A VR=100V Fig. 10: Reverse recovery current versus dIF/dt (90% confidence, per diode). IRM(A) 12 IF=6.5A VR=100V 10 Tj=125°C 8 6 4 Tj=25°C 2 10 dIF/dt(A/µs) 0 10 100 1000 0 10 dIF/dt(A/µs) 100 1000 4/7 STTH1302CT/CG/CFP Fig. 11: Dynamic parameters versus junction temperature. QRR;IRM[Tj]/QRR;IRM[Tj=125°C] 1.4 IF=6.5A VR=100V Fig. 12: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4, Cu = 35µm)(D2PAK). Rth(j-a)(°C/W) 80 70 1.2 1.0 0.8 IRM 60 50 40 0.6 0.4 0.2 QRR 30 20 10 Tj(°C) 0.0 0 25 50 75 100 125 150 S(cm²) 0 2 4 6 8 10 12 14 16 18 20 0 PACKAGE MECHANICAL DATA TO-220AB REF. Min. A H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A DIMENSIONS Millimeters Max. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 14 2.95 15.75 6.60 3.93 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 13 2.65 15.25 6.20 3.50 Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.511 0.104 0.600 0.244 0.137 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.066 0.202 0.106 0.409 0.551 0.116 0.620 0.259 0.154 C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M 16.4 typ. 0.645 typ. 2.6 typ. 0.102 typ. 5/7 STTH1302CT/CG/CFP PACKAGE MECHANICAL DATA D2PAK REF. A E L2 C2 DIMENSIONS Millimeters Min. Max. 4.60 2.69 0.23 0.93 1.70 0.60 1.36 9.35 10.40 5.28 15.85 1.40 1.75 3.20 Inches Min. 0.173 0.098 0.001 0.027 0.045 0.017 0.048 0.352 0.393 0.192 0.590 0.050 0.055 0.094 Max. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 0.409 0.208 0.624 0.055 0.069 0.126 A A1 A2 D 4.40 2.49 0.03 0.70 1.14 0.45 1.23 8.95 10.00 4.88 15.00 1.27 1.40 2.40 L L3 A1 B2 B G A2 C R B B2 C C2 D E G L L2 L3 M R M * V2 * FLAT ZONE NO LESS THAN 2mm 0.40 typ. 0.016 typ. FOOTPRINT 16.90 10.30 1.30 5.08 3.70 8.90 6/7 STTH1302CT/CG/CFP PACKAGE MECHANICAL DATA TO-220FPAB REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.6 0.173 0.181 2.5 2.7 0.098 0.106 2.5 2.75 0.098 0.108 0.45 0.70 0.018 0.027 0.75 1 0.030 0.039 1.15 1.70 0.045 0.067 1.15 1.70 0.045 0.067 4.95 2.4 5.20 2.7 0.195 0.094 0.205 0.106 A H B Dia L6 L2 L3 L5 D F1 L4 F2 L7 A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia. F G1 G E 10 10.4 16 Typ. 28.6 30.6 9.8 10.6 2.9 3.6 15.9 9.00 3.00 16.4 9.30 3.20 0.393 0.409 0.63 Typ. 1.126 1.205 0.386 0.417 0.114 0.142 0.626 0.354 0.118 0.646 0.366 0.126 Ordering type STTH1302CT STTH1302CFP STTH1302CG STTH1302CG-TR s Marking STTH1302CT STTH1302CFP STTH1302CG STTH1302CG Package TO-220AB TO-220FPAB D PAK D PAK 2 2 Weight 2.20 g 2.0 g 1.48 g 1.48 g Base qty 50 50 50 1000 Delivery mode Tube Tube Tube Tape & reel Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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