STV200N55F3
N-channel 55 V, 1.8 mΩ, 200 A, PowerSO-10
STripFET™ Power MOSFET
Features
Type
VDSS
RDS(on)
max
ID (1)
55 V
< 2.5 mΩ
200 A
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Description
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STV200N55F3
10
1. Current limited by package
1
PowerSO-10
■
Conduction losses reduced
■
Low profile, very low parasitic inductance
■
Switching applications
Figure 1.
Internal schematic diagram and
connection diagram (top view)
This n-channel enhancement mode Power
MOSFET is the latest refinement of ST’s
STripFET™ process. The resulting transistor
shows extremely high packing density for low on
resistance, rugged avalanche characteristics and
low gate charge.
Table 1.
Device summary
Order code
Marking
Package
Packaging
STV200N55F3
200N55F3
PowerSO-10
Tape and reel
March 2009
Rev 3
1/12
www.st.com
12
Contents
STV200N55F3
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
3
Electrical characteristics (curves)
Test circuits
............................. 5
.............................................. 8
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4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STV200N55F3
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
55
V
VDS
Drain-source voltage (vgs = 0)
VGS
Gate-source voltage
± 20
V
Drain current (continuous) at TC = 25 °C
200
A
Drain current (continuous) at TC = 100 °C
170
A
Drain current (pulsed)
800
Total dissipation at TC = 25 °C
300
Derating factor
2.0
ID
(1)
ID
IDM
(2)
PTOT
(3)
EAS (4)
Tstg
P
e
-55 to 175
Operating junction temperature
1. Current limited by package
3. This value is rated according to Rthj-c
O
)
Starting Tj = 25 °C, ID = 60 A, VDD = 35 V
Table 3.
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c
Thermal data
Symbol
Rthj-case
u
d
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(s)
e
t
le
o
s
b
O
-
Parameter
Thermal resistance junction-case max
Pr
Rthj-pcb(1)
let
o
s
b
2. Pulse width limited by safe operating area
4.
ct
1.0
Storage temperature
Tj
A
du
ro
Single pulse avalanche energy
Thermal resistance junction-pcb max
(s)
c
u
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W
W/°C
J
)
s
t(
°C
o
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P
Value
Unit
0.5
°C/W
50
°C/W
t
c
u
1. When mounted on 1 inch2 FR-4 2 oz Cu
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3/12
Electrical characteristics
2
STV200N55F3
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
On /off states
Parameter
Drain-source
breakdown voltage
Test conditions
ID = 250 µA, VGS= 0
IDSS
VDS = Max rating,
Zero gate voltage
drain current (VGS = 0) VDS = Max rating, Tc = 125 °C
IGSS
Gate body leakage
current (VDS = 0)
Min.
Typ.
Max.
55
Unit
V
1
10
µA
µA
±100
nA
4
V
1.8
2.5
mΩ
Typ.
Max.
Unit
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VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
Table 5.
Symbol
4/12
VDS = ± 20 V
2
VGS = 10 V, ID = 75 A
Dynamic
Parameter
Test conditions
Min.
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz, VGS =0
6800
1450
15
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 44 V, ID = 120 A,
VGS = 10 V
Figure 14
100
30
26
nC
nC
nC
STV200N55F3
Electrical characteristics
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 27.5 V, ID = 60 A
RG = 4.7 Ω, VGS = 10 V,
Figure 13
25
150
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD = 27.5 V, ID = 60 A
RG= 4.7 Ω, VGS= 10 V,
Figure 13
110
50
ns
ns
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Table 7.
Source drain diode
Symbol
Parameter
ISD
ISD (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
ISD = 120 A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 120 A,di/dt = 100 A/µs
VDD = 35 V, Tj = 150 °C
Figure 18
trr
Qrr
IRRM
Test conditions
Min.
Typ.
60
110
3.5
Max. Unit
200
800
A
A
1.5
V
ns
nC
A
1. Pulse width limited by safe operating area
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
5/12
Electrical characteristics
STV200N55F3
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
ID
(A)
100
Figure 3.
Thermal impedance
AM03160v1
a
re
280tok
K
is
δ=0.5
)
a (on
S
is
th RD
in ax
n
it o y m
ra d b
pe
O mite
i
L
0.2
100µs
0.1
1ms
10
0.05
-1
10
0.02
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10ms
Tj=175°C
1
Zth=k Rthj-c
δ=tp/τ
0.01
Tc=25°C
Sinlge
pulse
τ
10
1
10 -5
10
VDS(V)
Output characteristics
VGS=10V
400
-1
10
10
tp (s)
AM00889v1
VDS=6V
400
7V
6V
350
300
250
250
200
200
150
150
100
Figure 6.
-2
-3
10
Transfer characteristics
ID
(A)
300
50
0
0
-4
10
Figure 5.
AM03161v1
ID
(A)
350
tp
-2
0.1
0.1
Figure 4.
Single pulse
100
5V
50
2
4
6
8
0
VDS(V)
Normalized BVDSS vs temperature
1
Figure 7.
RDS(on)
(Ω)
2
3
5
4
6
7
8
9 VGS(V)
Static drain-source on resistance
AM03163v1
VGS=10V
2.5
2.0
1.5
1.0
0.5
0
6/12
100
200
300
400 ID(A)
STV200N55F3
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
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Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
7/12
Test circuits
3
STV200N55F3
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
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Figure 15. Test circuit for inductive load
Figure 16. Unclamped inductive load test
switching and diode recovery times
circuit
Figure 17. Unclamped inductive waveform
8/12
Figure 18. Switching time waveform
STV200N55F3
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
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9/12
Package mechanical data
STV200N55F3
PowerSO-10 mechanical data
mm
Dim
Min
A
A1
A2
A3
b
c
D
D1
E
E1
E2
E3
e
L
<
Typ
Max
3.70
0.10
3.60
1.35
0.53
0.55
9.60
7.60
14.40
9.50
7.60
6.10
0.00
3.40
1.25
0.40
0.35
9.40
7.40
13.80
9.30
7.20
5.90
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1.27
0.95
0o
1.65
8o
0068039_E
10/12
STV200N55F3
5
Revision history
Revision history
Table 8.
Document revision history
Date
Revision
Changes
05-Mar-2008
1
First release.
10-Nov-2008
2
Document status promoted from preliminary to datasheet.
02-Mar-2009
3
Figure 2 has been updated.
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11/12
STV200N55F3
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