STV250N55F3

STV250N55F3 N-channel 55 V, 1.5 mΩ, 250 A, PowerSO-10 STripFET™ Power MOSFET Features Type STV250N55F3 ■ ■ VDSS 55 V RDS(on) max < 2.2 mΩ ID 250 A 10 Conduction losses reduced Low profile, very low parasitic inductance 1 PowerSO-10 Application ■ Switching applications Figure 1. Internal schematic diagram and connection diagram (top view) Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge. Table 1. Device summary Order code Marking 250N55F3 Package PowerSO-10 Packaging Tape and reel STV250N55F3 March 2009 Rev 4 1/12 www.st.com 12 Contents STV250N55F3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuits .............................................. 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STV250N55F3 Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (1) (2) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Value 55 ± 20 250 175 1000 300 2.0 1 -55 to 175 Operating junction temperature Unit V V A A A W W/°C J °C PTOT EAS (3) Tstg Tj Single pulse avalanche energy Storage temperature 1. Pulse width limited by safe operating area 2. This value is rated according to Rthj-c 3. Starting Tj = 25 °C, ID = 60 A, VDD = 35 V Table 3. Symbol Rthj-case Rthj-pcb(1) Thermal data Parameter Thermal resistance junction-case max. Thermal resistance junction-pcb max. Value 0.5 50 Unit °C/W °C/W 1. When mounted on 1 inch2 FR-4 2 oz Cu 3/12 Electrical characteristics STV250N55F3 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On /off states Parameter Drain-source breakdown voltage Test conditions ID = 250 µA, VGS = 0 Min. 55 1 10 ±100 2 1.5 4 2.2 Typ. Max. Unit V µA µA nA V mΩ VDS = Max rating, Zero gate voltage drain current (VGS = 0) VDS = Max rating, Tc = 125 °C Gate body leakage current (VDS = 0) VDS = ± 20 V Gate threshold voltage VDS = VGS, ID = 250 µA Static drain-source on resistance VGS = 10 V, ID = 75 A Table 5. Symbol Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 6800 1450 15 100 30 26 Max. Unit pF pF pF nC nC nC VDS = 25 V, f = 1 MHz, VGS = 0 VDD = 44 V, ID = 120 A, VGS = 10 V Figure 14 4/12 STV250N55F3 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 27.5 V, ID = 60 A RG = 4.7 Ω, VGS = 10 V, Figure 13 VDD = 27.5 V, ID = 60 A RG = 4.7 Ω, VGS = 10 V, Figure 13 Min. Typ. 25 150 110 50 Max Unit ns ns ns ns Table 7. Symbol ISD ISD (1) VSD (2) trr Qrr IRRM 2. Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 120 A, VGS = 0 ISD = 120 A, di/dt = 100 A/µs VDD = 35 V, Tj = 150 °C Figure 18 60 110 3.5 Test conditions Min. Typ. Max. Unit 250 1000 1.5 A A V ns nC A 1. Pulse width limited by safe operating area Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/12 Electrical characteristics STV250N55F3 2.1 Figure 2. ID (A) Electrical characteristics (curves) Safe operating area AM03164v1 ar (on S is th RD in ax on y m ti ra d b pe O mite i L ea is ) Figure 3. Thermal impedance 280tok K δ=0.5 100µs 1ms 0.2 0.1 10 10ms -1 100 0.05 0.02 10 1 Tj=175°C Tc=25°C Sinlge pulse 0.01 Single pulse Zth=k Rthj-c δ=tp/τ tp τ 0.1 0.1 1 10 VDS(V) 10 -5 10 -2 10 -4 10 -3 10 -2 10 -1 tp (s) Figure 4. ID (A) 400 350 300 250 200 150 100 Output characteristics AM03165v1 Figure 5. ID (A) 400 Transfer characteristics AM03166v1 VGS=10V VDS=5V 7V 6V 350 300 250 200 150 5V 50 0 0 100 50 0 2 4 6 VDS(V) 0 1 2 3 4 5 6 7 8 9 VGS(V) Figure 6. Normalized BVDSS vs temperature Figure 7. RDS(on) (Ω) 3.0 2.5 2.0 1.5 1.0 0.5 0 Static drain-source on resistance AM03167v1 VGS=10V 100 200 300 400 ID(A) 6/12 STV250N55F3 Figure 8. Gate charge vs gate-source voltage Figure 9. Electrical characteristics Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics 7/12 Test circuits STV250N55F3 3 Test circuits Figure 14. Gate charge test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 8/12 STV250N55F3 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 9/12 Package mechanical data STV250N55F3 PowerSO-10 mechanical data mm Dim Min A A1 A2 A3 b c D D1 E E1 E2 E3 e L < 0.00 3.40 1.25 0.40 0.35 9.40 7.40 13.80 9.30 7.20 5.90 1.27 0.95 0o 1.65 8o Typ Max 3.70 0.10 3.60 1.35 0.53 0.55 9.60 7.60 14.40 9.50 7.60 6.10 0068039_E 10/12 STV250N55F3 Revision history 5 Revision history Table 8. Date 25-Oct-2007 20-Mar-2008 10-Nov-2008 02-Mar-2009 Document revision history Revision 1 2 3 4 Initial release Content reworked to improve readability, no technical changes. Document status promoted from preliminary data to datasheet. Figure 2 has been updated. Changes 11/12 STV250N55F3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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