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T3050H-6G

T3050H-6G

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO263-3

  • 描述:

    TRIAC ALTERNISTOR 600V 30A D2PAK

  • 数据手册
  • 价格&库存
T3050H-6G 数据手册
T3035H, T3050H Datasheet 30 A - 600 V H-series Snubberless Triac Features A2 • • • • • • G A1 A2 A2 G A1 A1 TO-220AB A2 G TO-220AB Ins. A2 D²PAK High current Triac High immunity level Low thermal resistance with clip bonding Very high 3 quadrant commutations at 150 °C capabilities Packages are RoHS (2002/95/EC) compliant UL certified (ref. file E81734) Applications Thanks to its high electrical noise immunity level and its strong current robustness, the T3035H, T3050H series is designed for the control of AC actuators in appliances and industrial systems. A2 A1 G Description Specifically designed to operate at 150 °C, the 30 A triacs T3050H provide very high dynamic and enhanced performance in terms of power loss and thermal dissipation. This allows the heatsink size optimization, leading to space and cost effectiveness when compared to electro-mechanical solutions. Based on ST Snubberless technology, they offer a specified minimal commutation and high noise immunity levels valid up to the Tj max. Product status link T3035H, T3050H Product summary IT(RMS) 30 A VDRM/VRRM 600 V IGT 35 or 50 mA These devices safely optimize the control of universal motors and inductive loads found in power tools and major appliances. By using an internal ceramic pad, they provide voltage insulation (rated at 2500 VRMS). DS6689 - Rev 7 - November 2021 For further information contact your local STMicroelectronics sales office. www.st.com T3035H, T3050H Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol IT(RMS) Parameter I2t VDSM/ VRSM IGM PG(AV) Tstg Tj 30 A Tc = 121 °C TO-220AB Ins. Tc = 92 °C f = 50 Hz t = 20 ms 270 f = 60 Hz t = 16.7 ms 284 tp = 10 ms 487 A2s RMS on-state current (full sine wave) I2t value for fusing dl/dt Unit D2PAK, TO-220AB Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) ITSM Value A Critical rate of rise of on-state current, IG = 2 x IGT, tr ≤ 100 ns, f = 100 Hz f = 120 Hz Tj =150 °C 50 A/µs Non Repetitive peak off-state voltage tp = 10 ms Tj = 25 °C VDRM/VRRM +100 V Peak gate current tp = 20 µs Tj = 150 °C 4 A Tj = 150 °C 1 W Storage temperature range -40 to +150 °C Operating junction temperature range -40 to +150 °C Average gate power dissipation Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol IGT(1) VGT VGD IL I - II - III VD = VDRM, RL = 3.3 kΩ (2) Max. T2035H T2050H 35 50 Unit mA Max. 1.0 V I - II - III Max. 0.15 V I - III Max. 75 90 II Max. 90 110 Max. 60 75 mA IT = 500 mA, gate open dV/dt (2) Value Quadrants VD = 12 V, RL = 33 Ω IG = 1.2 x IGT IH (2) (dl/dt)c Test conditions mA VD = 2/3 x VDRM, gate open Tj = 150 °C Min. 1000 1500 V/µs Without snubber Tj = 150 °C Min. 33 44 A/ms 1. Minimum IGT is guaranteed at 20% of IGT max. 2. For both polarities of A2 referenced to A1. DS6689 - Rev 7 page 2/13 T3035H, T3050H Characteristics Table 3. Static characteristics Symbol VT (1) VTO (1) RD(1) Test conditions Tj = 25 °C Max. 1.55 V Threshold voltage Tj = 150 °C Max. 0.80 V Dynamic resistance Tj = 150 °C Max. 15 mΩ 10 µA 8.5 mA Tj = 25 °C Tj = 150°C IDRM/ IRRM Unit IT = 42 A, tp = 380 µs VDRM = VRRM (2) Value Max. VD = VR = 400 V, peak voltage Tj = 150 °C Max. 7 VD = VR = 200 V, peak voltage Tj = 150 °C Max. 5.5 mA 1. For both polarities of A2 referenced to A1. 2. tp = 380 μs Table 4. Thermal resistance Symbol Rth(j-c) Rth(j-a) Parameter Junction to case (AC) Junction to ambient (Scu = 2 cm2) Junction to ambient DS6689 - Rev 7 Value D2PAK, TO-220AB 0.8 TO-220AB Ins. 1.6 D2PAK, TO-220AB 45 TO-220AB Ins. 60 Unit °C/W °C/W page 3/13 T3035H, T3050H Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Maximum power dissipation versus on-state RMS current Figure 2. On-state RMS current versus case temperature IT(RMS) (A) P(W) 35 40 35 30 30 25 25 20 20 TO-220AB, D²PAK TO-220AB- ins 15 15 10 10 5 5 IT(RMS)(A) 0 0 5 10 15 20 25 30 Figure 3. On-state RMS current versus ambient temperature (free air convection) Tc(°C) 0 0 25 50 100 75 125 150 Figure 4. Variation of thermal impedance versus pulse duration K=[Zth /Rth] IT(RMS)(A) 1.0E+00 3.5 Zth(j-c) Zth(j-a) 3.0 2.5 1.0E-01 2.0 1.5 1.0E-02 1.0 0.5 0.0 0 Ta (°C) 25 50 75 tP(s) 1.0E-03 100 125 150 Figure 5. Relative variation of gate trigger current and gate trigger voltage versus junction temperature 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Figure 6. Relative variation of holding current and latching current versus junction temperature (typical value) IH, IL [Tj] / IH, IL [Tj = 25 °C] 2.0 1.5 1.0 IL IH 0.5 0.0 -50 DS6689 - Rev 7 Tj(°C) -25 0 25 50 75 100 125 150 page 4/13 T3035H, T3050H Characteristics (curves) Figure 7. Surge peak on-state current versus number of cycles Figure 8. Non-repetitive surge peak on-state current for a sinusoidal pulse with width tP < 10 ms I TSM (A) ITSM(A) 10000 Tj initial = 25°C 250 t = 20 ms 200 One cy cle Non repetitive Tj initial = 25 °C 150 1000 100 100 Repetitive 50 TC = 121 °C Number of cycles 0 1 01 100 t P (ms) 1000 Figure 9. On-state characteristics (maximum values) ITM(A) 10 0.01 0.10 1.00 10.00 Figure 10. Relative variation of critical rate of decrease of main current versus junction temperature (dI/dt)c[T j ]/(dI/dt)c [T j = 150 °C] 1000 11 10 9 8 100 7 V 6 5 4 10 3 2 1 1 0 1 2 3 4 5 Figure 11. Relative variation of static dV/dt immunity versus junction temperature Tj (°C) 0 25 50 125 150 IDRM RRM [T j;V DRM /VRRM DRM RRM 1.0E+00 VD = V R= 400 V 10 100 Figure 12. Relative variation of leakage current versus junction temperature for different values of blocking voltage dV/dt[Tj ]/dV/dt[Tj = 150 °C] 11 75 [Tj = 150 °C; 600 V] 9 8 VDRM = V RRM = 600 V 1.0E-01 7 6 VDRM = V RRM = 400 V 5 1.0E-02 4 VDRM = V RRM = 200 V 3 2 1.0E-03 1 Tj(°C) 0 25 50 75 100 125 150 25 DS6689 - Rev 7 T j (°C) 1.0E-04 50 75 100 125 150 page 5/13 T3035H, T3050H Characteristics (curves) Figure 13. Thermal resistance junction to ambient versus copper surface under tab 80 Figure 14. Acceptable junction to ambient thermal resistance versus repetitive peak off-state voltage and ambient temperature Rth(j-a) (°C/W) D²PAK 70 Epoxy printed board FR4, copper thickness = 35 µm 60 50 40 30 20 10 SCu (cm²) 0 0 DS6689 - Rev 7 5 10 15 20 25 30 35 40 page 6/13 T3035H, T3050H Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 D²PAK package information Figure 15. D²PAK package outline A E E1 E2 H D D1 L2 c2 2 3 D2 L3 1 b2 b e Max resin gate protrusion: 0.5 mm (1) G A1 A2 A3 L R Gauge Plane V2 c (1) Resin gate is accepted in each of position shown on the drawing, or their symmetrical. DS6689 - Rev 7 page 7/13 T3035H, T3050H D²PAK package information Table 5. D²PAK package mechanical data Dimensions Inches(1) Millimeters Ref. Min. Typ. Max. Min. Typ. Max. A 4.30 4.60 0.1693 0.1811 A1 2.49 2.69 0.0980 0.1059 A2 0.03 0.23 0.0012 0.0091 A3 0.25 0.0098 b 0.70 0.93 0.0276 0.0366 b2 1.25 1.7 0.0492 0.0669 c 0.45 0.60 0.0177 0.0236 c2 1.21 1.36 0.0476 0.0535 D 8.95 9.35 0.3524 0.3681 D1 7.50 8.00 0.2953 0.3150 D2 1.30 1.70 0.0512 0.0669 e 2.54 E 10.00 10.28 0.3937 0.4047 E1 8.30 8.70 0.3268 0.3425 E2 6.85 7.25 0.2697 0.2854 G 4.88 5.28 0.1921 0.2079 H 15 15.85 0.5906 0.6240 L 1.78 2.28 0.0701 0.0898 L2 1.27 1.40 0.0500 0.0551 L3 1.40 1.75 0.0551 0.0689 R V2 0.1 0.40 0° 0.0157 8° 0° 8° 1. Dimensions in inches are given for reference only Figure 16. D²PAK recommended footprint (dimensions are in mm) 16.90 10.30 5.08 1.30 8.90 DS6689 - Rev 7 3.70 page 8/13 T3035H, T3050H TO-220AB package information 2.2 TO-220AB package information • • • • Molding compound resin is halogen-free and meets flammability standard UL94 level 0 Lead-free package leads finishing ECOPACK2 compliant Recommended torque: 0.4 to 0.6 N.m Figure 17. TO-220AB package outline C B b2 I Resin gate 0.5 mm max. protusion(1) L F A I4 l3 c2 a1 l2 a2 M b1 e Resin gate 0.5 mm max. protusion(1) c1 (1)Resin gate position accepted in one of the two positions or in the symmetrical opposites. DS6689 - Rev 7 page 9/13 T3035H, T3050H TO-220AB package information Table 6. TO-220AB package mechanical data Dimensions Min. A Inches(1) Millimeters Ref. Typ. 15.20 a1 Max. Min. 15.90 0.5984 3.75 Typ. Max. 0.6260 0.1476 a2 13.00 14.00 0.5118 0.5512 B 10.00 10.40 0.3937 0.4094 b1 0.61 0.88 0.0240 0.0346 b2 1.23 1.32 0.0484 0.0520 C 4.40 4.60 0.1732 0.1811 c1 0.49 0.70 0.0193 0.0276 c2 2.40 2.72 0.0945 0.1071 e 2.40 2.70 0.0945 0.1063 F 6.20 6.60 0.2441 0.2598 I 3.73 3.88 0.1469 0.1528 L 2.65 2.95 0.1043 0.1161 I2 1.14 1.70 0.0449 0.0669 I3 1.14 1.70 0.0449 0.0669 I4 15.80 16.80 0.6220 M 16.40 2.6 0.6457 0.6614 0.1024 1. Inch dimensions are for reference only. DS6689 - Rev 7 page 10/13 T3035H, T3050H Ordering information 3 Ordering information Figure 18. Ordering information scheme Table 7. T 30 xx H - 6 y -TR Triac series Current 30 = 30 A Sensitivity 35 = 35 mA 50 = 50 mA High temperature Voltage 6 = 600 V Package T = TO-220AB I = TO-220AB insulated G = D²PAK Delivery mode Blank = tube (TO-220AB, TO-220AB ins) -TR = Tape and reel (D²PAK) Ordering information DS6689 - Rev 7 Order code Marking T3035H-6G T2035H-6G T3035H-6G-TR T2035H-6G T3035H-6I Package Weight Base qty. Delivery mode D²PAK 1.5 g 50 Tube 1000 Tape and reel 13" T3035H-6I TO-220AB Ins. 2.3 g 50 Tube T2035H-6T T3035H-6T TO-220AB 2.3 g 50 Tube T2050H-6G T3050H-6G D²PAK 1.5 g 50 Tube T2050H-6G-TR T3050H-6G 1000 Tape and reel 13" T2050H-6T T3050H-6T TO-220AB 2.3 g 50 Tube page 11/13 T3035H, T3050H Revision history Table 8. Document revision history DS6689 - Rev 7 Date Version Changes 28-Jan-2010 1 Initial release. 17-May-2010 2 Updated maximum Tj in Table 2. 14-Dec-2010 3 Updated IGT in Table 1. 20-Sep-2011 4 Updated: Features. 21-Jul-2015 5 Update Table 2 and reformatted to current standard. 20-Jan-2017 6 D²PAK package added. 17-Nov-2021 7 Updated Description and Table 2. Minor text changes. page 12/13 T3035H, T3050H IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS6689 - Rev 7 page 13/13
T3050H-6G 价格&库存

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T3050H-6G
  •  国内价格 香港价格
  • 1000+7.926811000+0.96082
  • 2000+7.889772000+0.95633
  • 3000+7.889593000+0.95631
  • 4000+7.889424000+0.95629
  • 5000+7.889255000+0.95627

库存:0