TN5050H-12WY

TN5050H-12WY Datasheet 50 A 1200 V automotive grade thyristor (SCR) Features A G K TAB = A A K G TO-247 uninsulated • • • AEC-Q101 qualified Blocking voltage: +/- 1200 V On-state current: 50 ARMS • • High static and dynamic commutation: – dI/dt = 200 A/μs – dV/dt = 1000 V/μs IGT = 50 mA • ECOPACK2 compliant component Applications • • • • • • • • • Product status Automotive applications: on board and off board battery charger Renewable energy inverters Solid state relay Overvoltage crowbar protection UPS (uninterruptible power supply) Bypass SSR / hybrid relay Inrush current limiter in battery charger AC-DC voltage controlled rectifier Industrial welding systems TN5050H-12WY Product summary IT(RMS) 50 A VDRM/VRRM 1200 V VDSM/VRSM 1300 V IGT 50 mA Tj 150 °C Description Available in TO-247 high power package, the TN5050H-12WY autograde is suitable in applications such as automotive / stationary battery charger, renewable energy generator, interruptible power supply, solid state relay, welding equipment and motor drive applications. Its power switching, voltage robustness and power dissipation performances are the key features for functions such as a 80 A AC switch, an AC phasing inverter and an AC-DC controlled rectifier bridge. The TN5050H-12WY is an automotive grade product and offers a superior performance in surge current handling, thermal cooling capabilities and overvoltage robustness. DS10561 - Rev 5 - February 2020 For further information contact your local STMicroelectronics sales office. www.st.com TN5050H-12WY Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values) Symbol IT(RMS) IT(AV) IT(RMS) IT(AV) ITSM (1) VDRM / VRRM dl/dt IGM PG(AV) Tstg Tj Parameter Value RMS on-state current (180 ° conduction angle) RMS on-state current (180 ° conduction angle) tp = 8.3 ms tp = 10 ms A 32 80 TC = 125 °C Average on-state current (180 ° conduction angle) Non repetitive surge peak on-state current, VR = 0 V 50 TC = 137 °C Average on-state current (180 ° conduction angle) Unit A 51 633 Tj initial = 25 °C A 580 Tj = 150 °C 1200 V f = 50 Hz Tj = 150 °C 200 A/µs tp = 20 µs Tj = 150 °C 8 A Tj = 150 °C 1 W Storage junction temperature range -40 to +150 °C Operating junction temperature -40 to +150 °C Repetitive off-state voltage (50-60 Hz) IG = 2 x IGT , tr ≤ 100 ns Critical rate of rise of on-state current Peak forward gate current Average gate power dissipation 1. ST recommend I²t value for fusing = 1680 A²s for Tj = 25 °C and tP = 10 ms Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol IGT VD = 12 V, RL = 33 Ω VGT VD = 12 V, RL = 33 Ω VGD VD = 2/3 x VDRM, RL = 3.3 kΩ Value Tj = 150 °C Unit Min. 10 Max. 50 Max. 1 V Min. 0.15 V mA IH IT = 500 mA, gate open Max. 100 mA IL IG = 1.2 x IGT Max. 125 mA tgt IT = 50 A , VD = VDRM, IG = 200 mA, dIG/dt = 0.2 A/µs Typ. 3 µs Tj = 150 °C Min. 1000 V/µs Tj = 150 °C Typ. 150 µs Max. 1.55 V dV/dt tq VD = 2/3 x VDRM, gate open IT = 33 A, dIT/dt = 10 A/µs, VR = 75 V, VD = 800 V, dVD/dt = 20 V/µs, tP = 100 µs VTM ITM = 100 A, tP = 380 µs VTO On-state threshold voltage Tj = 150 °C Max. 0.88 V RD On-state dynamic resistance Tj = 150 °C Max. 6 mΩ Tj = 25 °C Max. 5 µA Tj = 125 °C Max. 3 mA Tj = 150 °C Max. 7.5 mA Tj = 25 °C Max. 10 µA IDRM/IRRM IDSM/IRSM DS10561 - Rev 5 Test Conditions VD = VDRM, VR = VRRM VD = VDSM, VR = VRSM page 2/10 TN5050H-12WY Characteristics Table 3. Thermal parameters Symbol DS10561 - Rev 5 Parameter Rth(j-c) Junction to case (DC, max.) Rth(j-a) Junction to ambient (typ.) Value TO-247 0.3 50 Unit °C/W page 3/10 TN5050H-12WY Characteristics (curves) 1.1 Characteristics curves Figure 1. Maximum average power dissipation versus average on-state current 55 50 P(W) P(AV)(W) α = 180 ° 45 T (°C) C 50 DC R (assembly) 0 °C/W th α = 120 ° 40 α = 90 ° 35 30 R (assembly) 1 °C/W th R (assembly) 2 °C/W th 40 30 α = 30 ° 20 143.5 146 360 ° 10 5 IT(AV) (A) α 0 0 5 10 20 15 25 35 30 0 Figure 3. Average and DC on-state current versus case temperature IT(AV) (A) a 25 50 75 100 125 150 Figure 4. Average and D.C. on-state current versus ambient temperature I (A) T(AV) 4.0 DC 148.5 T (°C) TO-247 0 40 136 141 R (assembly) 3 °C/W th 20 15 10 133.5 138.5 α = 60 ° 25 55 50 45 Figure 2. Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tcase) 3.5 40 35 30 25 20 15 DC 3.0 2.5 α = 180 ° α = 90 ° 1.5 α = 60 ° 10 5 0 1.0 α = 30 ° 0.5 Tc(°C) 0 25 50 75 100 125 150 Figure 5. Relative variation of thermal impedance junction to case and junction to ambient versus pulse duration 1.0E+00 α = 180 ° 2.0 α = 120 ° K = [Z / R ] th th 0.0 Ta(°C) 0 50 25 75 100 125 150 Figure 6. Relative variation of gate trigger current and gate voltage versus junction temperature (typical values) IGT, VGT [ Tj ] / IGT, VGT [ Tj = 25 °C] 2.0 Zth(j-c) IGT 1.5 Zth(j-a) 1.0E-01 1.0 VGT 0.5 tP(s) 1.0E-03 DS10561 - Rev 5 1.0E-02 1.0E-01 1.0E+00 Tj(°C) 0.0 1.0E-02 1.0E+01 1.0E+02 1.0E+03 -40 -25 0 25 50 75 100 125 150 page 4/10 TN5050H-12WY Characteristics (curves) Figure 8. Surge peak on-state current versus number of cycles Figure 7. Relative variation of holding and latching current versus junction temperature (typical values) IH, IL [ Tj ] / IH, IL [ Tj = 25 °C] 2.0 ITSM(A) 750 700 Non repetitive Tj initial = 25 °C 650 600 550 500 450 400 350 300 250 200 Repetitive Tc = 137 °C 150 100 50 Number of cycles 0 1 10 100 IH 1.8 1.5 1.3 IL 1.0 0.8 0.5 0.3 Tj(°C) 0.0 -40 -25 0 25 50 75 100 125 150 Figure 9. Non repetitive surge peak on-state current for a sinusoidal pulse (tp < 10 ms) 10000 ITSM(A) 1000 ITM(A) Tj initial = 25 °C VR = 0 V ITSM Tj max: Vt0 = 0.88 V Rd = 6 mΩ 100 1000 10 100 10 0.01 One cycle VR = 0 V Figure 10. On-state characteristics (maximum values) 1000 dl/dt limitation: 200 A/µs tp=10ms Tp(ms) 0.10 1.00 1 Tj = 150 °C 0.0 10.00 Tj = 25 °C 1.0 2.0 VTM(V) 3.0 4.0 Figure 11. Relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values) I ,I [ T ;V ,V ]/I /I [ 150 °C ;1200 V] DRM RRM j DRM RRM DRM RRM 1.0E+00 VDRM = VRRM = 1200 V 1.0E-01 1.0E-02 1.0E-03 VDRM = VRRM = 1000 V 1.0E-04 1.0E-05 25 DS10561 - Rev 5 Tj(°C) 50 75 100 125 150 page 5/10 TN5050H-12WY Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 TO-247 package information • • • Epoxy meets UL 94,V0 Recommended torque value: 0.8 N·m Maximum torque value: 1 N·m Figure 12. TO-247 package outline 0075325_9 DS10561 - Rev 5 page 6/10 TN5050H-12WY TO-247 package information Table 4. TO-247 package mechanical data Dimensions Dim. Inches(1) Millimeters Min. Typ. Max. Min. Typ. Max. A 4.85 5.15 0.1909 0.2028 A1 2.20 2.60 0.0866 0.1024 b 1.0 1.40 0.0394 0.0551 b1 2.0 2.40 0.0787 0.0945 b2 3.0 3.40 0.1181 0.1339 c 0.40 0.80 0.0157 0.0315 D(2) 19.85 20.15 0.7815 0.7933 E 15.45 15.75 0.6083 0.6201 e 5.30 5.60 0.2087 L 14.20 14.80 0.5591 0.5827 L1 3.70 4.30 0.1457 0.1693 L2 5.45 18.50 ØP(3) 3.55 ØR 4.50 S 5.30 5.50 0.2146 0.2205 0.7283 3.65 0.1398 5.50 0.1772 5.70 0.2087 0.1437 0.2165 0.2165 0.2244 1. Inch dimensions given only for reference 2. Dimension D plus gate protrusion does not exceed 20.5 mm 3. Resin thickness around the mounting hole is not less than 0.9 mm DS10561 - Rev 5 page 7/10 TN5050H-12WY Ordering information 3 Ordering information Table 5. Ordering information DS10561 - Rev 5 Order code Marking Package Weight Base qty. Delivery mode TN5050H-12WY TN5050H12Y TO-247 4.43 g 30 Tube page 8/10 TN5050H-12WY Revision history Table 6. Document revision history DS10561 - Rev 5 Date Revision Changes 07-Jan-2015 1 Initial release. 17-Oct-2017 2 Updated TO-247 package information. 20-Dec-2017 3 Updated Table 5: "TO-247 package mechanical data". 11-Sep-2019 4 Updated Table 1 and Figure 8. Minor text change. 27-Feb-2020 5 Minor text change to improve the readability of the document. page 9/10 TN5050H-12WY IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS10561 - Rev 5 page 10/10