TN3050H-12WY

TN3050H-12WY Datasheet 30 A, 1200 V automotive grade SCR Thyristor Features A G K TAB = A A K G TO-247 uninsulated • • AEC-Q101 qualified High junction temperature: Tj = 150 °C • • AC off state voltage: +/- 1200 V Nominal on-state current: 30 ARMS • • • High noise immunity: 1000 V/μs Max. gate triggering current: 50 mA ECOPACK2 compliant component Applications • • • • • • • • • Automotive applications: on board and off board battery charger Renewable energy inverters Solid state relay 3-Phase heating or motor soft start control UPS (uninterruptible power supply) Bypass SSR / hybrid relay Inrush current limiter in battery charger AC-DC voltage controlled rectifier Industrial welding systems Product status Description TN3050H-12WY Product summary IT(RMS) 30 A VDRM/VRRM 1200 V VDSM/VRSM 1400 V IGT 50 mA Tj 150 °C The TN3050H-12WY is an automotive grade SCR Thyristor designed for applications such as automotive on-board chargers, solid state AC relays and stationary battery chargers. This SCR Thyristor, rated for a 30 A RMS power switching, offers superior performance in peak voltage robustness up to 1400 V and surge current handling up to 300 A sine wave pulse. Its key features allow the design of functions such as a 42 A RMS AC switch (dual back-to-back SCRs) and a 38 A average AC-DC controlled rectifier bridge for inrush current limitation. Available in through-hole TO-247 package, this power package allows a thermal operation up to 30 A RMS with a higher case temperature of 126 °C. DS11831 - Rev 5 - March 2020 For further information contact your local STMicroelectronics sales office. www.st.com TN3050H-12WY Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values) Symbol IT(RMS) IT(AV) ITSM (1) VDRM/VRRM dl/dt IGM PG(AV) Tstg Tj Parameter RMS on-state current (180 ° conduction angle) Value Unit 30 A 19 A TC = 126 °C Average on-state current (180 ° conduction angle) tp = 8.3 ms Tj initial = 25 °C 330 Tj = 150 °C 1200 V f = 50 Hz Tj = 150 °C 200 A/µs tp = 20 µs Tj = 150 °C 8 A Tj = 150 °C 1 W Storage junction temperature range -40 to +150 °C Operating junction temperature -40 to +150 °C Non repetitive surge peak on-state current, VR = 0 V tp = 10 ms Repetitive off-state voltage (50-60 Hz) IG = 2 x IGT , tr ≤ 100 ns Critical rate of rise of on-state current Peak forward gate current Average gate power dissipation A 300 1. ST recommend I²t value for fusing = 450 A²s for Tj = 25 °C and tP = 10 ms Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol IGT VD = 12 V, RL = 33 Ω VGT VD = 12 V, RL = 33 Ω VGD VD = 2/3 x VDRM, RL = 3.3 kΩ Value Tj = 150 °C Unit Min. 10 Max. 50 Max. 1.3 V Min. 0.2 V mA IH IT = 500 mA, gate open Max. 100 mA IL IG = 1.2 x IGT Max. 125 mA tgt IT = 60 A , VD = 2/3 x VDRM, IG = 100 mA, dIG/dt = 0.2 A/µs Typ. 1 µs Tj = 150 °C Min. 1000 V/µs Tj = 150 °C Typ. 150 µs Max. 1.65 V dV/dt tq VD = 2/3 x VDRM, gate open IT = 20 A, dIT/dt = 10 A/µs, VR = 75 V, VD = 2/3 x VDRM, dVD/dt = 20 V/µs, tP = 100 µs VTM ITM = 60 A, tP = 380 µs VTO Threshold voltage Tj = 150 °C Max. 0.88 V RD Dynamic resistance Tj = 150 °C Max. 14 mΩ Tj = 25 °C Max. 5 µA Tj = 125 °C Max. 3 mA Tj = 150 °C Max. 5 mA Tj = 25 °C Max. 10 µA IDRM/IRRM IDSM/IRSM DS11831 - Rev 5 Test Conditions VD = VDRM, VR = VRRM VD = VDSM, VR = VRSM page 2/10 TN3050H-12WY Characteristics Table 3. Thermal parameters Symbol DS11831 - Rev 5 Parameter Value Rth(j-c) Junction to case (DC, max.) 0.8 Rth(j-a) Junction to ambient (typ.) 50 Unit °C/W page 3/10 TN3050H-12WY Characteristics (curves) 1.1 Characteristics curves Figure 1. Maximum average power dissipation versus average on-state current 30 Figure 2. Average and DC on-state current versus case temperature P(W) 35 D.C α = 180 ° IT(AV) (A) α = 120 ° D.C 30 α = 90 ° 25 α = 60 ° 20 25 α = 30 ° α = 60 ° α = 90 ° α = 120 ° α = 180 ° α = 30 ° 20 15 15 10 10 5 5 IT(AV) (A) T C (°C) 0 0 0 5 10 15 20 Figure 3. On-state characteristics (maximum values) 1000 0 25 25 50 75 100 125 150 Figure 4. Average and D.C. on-state current versus ambient temperature ITM(A) IT(AV) (A) 4.0 3.5 DC 3.0 100 2.5 α = 180 ° 2.0 10 1.5 Tj = 150 °C VTM (V) Tj = 25 °C At Tj max : Vto = 0.88 V Rd = 14 mΩ 1 0.0 1.0 2.0 3.0 4.0 Figure 5. Relative variation of thermal impedance junction to case and junction to ambient versus pulse duration 1.0E+00 K = [Zth/Rth] 1.0 0.5 T a (°C) 0.0 0 25 75 100 tp=10ms One cycle 250 1.0E-01 150 ITSM(A) 300 Zth(j -a) 125 Figure 6. Surge peak on-state current versus number of cycles 350 Zth(j -c) 50 Non repetitive,Tj initial = 25 °C 200 VR = 0 V 150 1.0E-02 100 Repetitive, TC = 126 °C 50 t P (s) 1.0E-03 1.0E-03 DS11831 - Rev 5 Number of cycles 0 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1 10 100 1000 page 4/10 TN3050H-12WY Characteristics (curves) Figure 7. Non repetitive surge peak on-state current for a sinusoidal pulse (tp < 10 ms) 10000 Figure 8. Relative variation of holding and latching current versus junction temperature (typical values) ITSM(A) dI/dt limitation: 200 A/µs 2.0 Tj initial = 25 °C VR = 0 V IH , IL [T j ]/ IH , IL [T j = 25 °C] 1.8 ITSM IH 1.5 1000 1.3 IL 1.0 100 0.8 0.5 tP (ms) 10 0.01 0.10 1.00 0.3 -50 10.00 Figure 9. Relative variation of gate triggering current and voltage versus junction temperature 2.0 Tj(°C) -25 0 25 50 75 100 125 150 Figure 10. Relative variation of the static dV/dt immunity versus junction temperature (typical values) IGT,VGT [T j ] / I GT,VGT [T j = 25 °C] dV/dt[Tj]/dV/dt[Tj = 150 °C] 7 6 IGT VD = 0.67 x V DRM 1.5 5 4 1.0 3 VGT 2 0.5 1 Tj(°C) 0.0 -50 -25 0 25 50 75 100 125 Tj (°C) 0 150 25 50 75 100 125 150 Figure 11. Relative variation of leakage current versus junction temperature for different values of blocking voltage 1.0E+00 IDRM,IRRM [T j ;V DRM,VRRM] / IDRM,IRRM [150 °C; 1200 V] 1.0E-01 VDRM = VRRM = 1200 V 1.0E-02 1.0E-03 VDRM = VRRM = 1000 V 1.0E-04 Tj(°C) 1.0E-05 25 DS11831 - Rev 5 50 75 100 125 150 page 5/10 TN3050H-12WY Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 TO-247 package information • • • Epoxy meets UL 94,V0 Recommended torque value: 0.8 N·m Maximum torque value: 1 N·m Figure 12. TO-247 package outline 0075325_9 DS11831 - Rev 5 page 6/10 TN3050H-12WY TO-247 package information Table 4. TO-247 package mechanical data Dimensions Dim. Inches(1) Millimeters Min. Typ. Max. Min. Typ. Max. A 4.85 5.15 0.1909 0.2028 A1 2.20 2.60 0.0866 0.1024 b 1.0 1.40 0.0394 0.0551 b1 2.0 2.40 0.0787 0.0945 b2 3.0 3.40 0.1181 0.1339 c 0.40 0.80 0.0157 0.0315 D(2) 19.85 20.15 0.7815 0.7933 E 15.45 15.75 0.6083 0.6201 e 5.30 5.60 0.2087 L 14.20 14.80 0.5591 0.5827 L1 3.70 4.30 0.1457 0.1693 L2 5.45 18.50 ØP(3) 3.55 ØR 4.50 S 5.30 5.50 0.2146 0.2205 0.7283 3.65 0.1398 5.50 0.1772 5.70 0.2087 0.1437 0.2165 0.2165 0.2244 1. Inch dimensions given only for reference 2. Dimension D plus gate protrusion does not exceed 20.5 mm 3. Resin thickness around the mounting hole is not less than 0.9 mm DS11831 - Rev 5 page 7/10 TN3050H-12WY Ordering information 3 Ordering information Table 5. Ordering information DS11831 - Rev 5 Order code Marking Package Weight Base qty. Delivery mode TN3050H-12WY TN3050H12Y TO-247 4.4 g 50 Tube page 8/10 TN3050H-12WY Revision history Table 6. Document revision history DS11831 - Rev 5 Date Revision Changes 16-Sep-2016 1 Initial release. 03-Oct-2016 2 Updated Table 3. Thermal parameters. 15-Jan-2019 3 Updated Table 5. Ordering information. 05-Aug-2019 4 Updated Section Description and Table 1. Absolute ratings (limiting values). 31-Mar-2020 5 Updated Figure 6 and Figure 7. page 9/10 TN3050H-12WY IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS11831 - Rev 5 page 10/10