TN3050H-12GY-TR

TN3050H-12GY-TR Datasheet 30 A – 1200 V automotive grade SCR Thyristor Features A G K A K A G D²PAK • • AEC-Q101 qualified High junction temperature: Tj = 150 °C • • AC off state voltage: +/- 1200 V Nominal on-state current: 30 ARMS • • High noise immunity: 1000 V/μs Max. gate triggering current: 50 mA • ECOPACK®2 compliant component Applications • • • • • • • • • Automotive applications: on board and off board battery charger Renewable energy inverters Solid state relay 3-Phase heating or motor soft start control UPS (uninterruptible power supply) Bypass SSR / hybrid relay Inrush current limiter in battery charger AC-DC voltage controlled rectifier Industrial welding systems Product status link TN3050H-12GY-TR Description Product summary The TN3050H-12GY-TR is an automotive grade SCR Thyristor designed for applications such as automotive on-board chargers, AC solid state relays and stationary battery chargers. IT(RMS) 30 A VDRM/VRRM 1200 V VDSM/VRSM 1400 V IGT 50 mA Tj 150 °C Rated for a 30 ARMS power switching, This SCR Thyristor offers superior performance in terms of peak voltage robustness (up to 1400 V) and surge current handling (sine wave pulse up to 300 A). Its key features allow the design of functions such as a 42 ARMS AC switch (dual back-to-back SCRs) and a 38 A average AC-DC controlled rectifier bridge for inrush current limitation. Available in D²PAK package, it is ideal for compact SMD designs on surface mount boards or insulated metal substrate boards. DS11813 - Rev 3 - September 2019 For further information contact your local STMicroelectronics sales office. www.st.com TN3050H-12GY-TR Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values) Symbol IT(RMS) Parameter RMS on-state current (180 ° conduction angle) IT(AV) Average on-state current (180 ° conduction angle) ITSM(1) Non repetitive surge peak on-state current, VR = 0 V VDRM / VRRM Repetitive off-state voltage (50-60 Hz) dl/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns VGM Peak forward gate voltage IGM Peak forward gate current TC = 126 °C tp = 8.3 ms tp = 10 ms Tj initial = 25 °C Value Unit 30 A 19 A 330 300 A Tj = 150 °C 1200 V f = 50 Hz Tj = 150 °C 200 A/µs tp = 20 µs Tj = 150 °C 10 V 8 A PG(AV) Average gate power dissipation Tj = 150 °C 1 W VRGM Peak reverse gate voltage Tj = 25 °C 5 V Storage junction temperature range -40 to +150 °C Operating junction temperature -40 to +150 °C Tstg Tj 1. ST recommend I²t value for fusing = 450 A²s for Tj = 25 °C and tP = 10 ms Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol IGT VD = 12 V, RL = 33 Ω VGT VD = 12 V, RL = 33 Ω VGD VD = 2/3 x VDRM, RL = 3.3 kΩ Value Tj = 150 °C Unit Min. 10 Max. 50 Max. 1.3 V Min. 0.2 V mA IH IT = 500 mA, gate open Max. 100 mA IL IG = 1.2 x IGT Max. 125 mA tgt IT = 60 A , VD = 2/3 x VDRM, IG = 100 mA, dIG/dt = 0.2 A/µs Typ. 1 µs VD = 2/3 x VDRM, gate open Tj = 150 °C Min. 1000 V/µs IT = 20 A, dIT/dt = 10 A/µs, VR = 75 V, VD = 2/3 x VDRM, dVD/dt = 20 V/µs, tP = 100 µs Tj = 150 °C Typ. 150 µs Max. 1.65 V dV/dt tq VTM ITM = 60 A, tP = 380 µs VTO Threshold voltage Tj = 150 °C Max. 0.88 V RD Dynamic resistance Tj = 150 °C Max. 14 mΩ Tj = 25 °C Max. 5 µA Tj = 125 °C Max. 3 mA Tj = 150 °C Max. 5 mA Tj = 25 °C Max. 10 µA IDRM/IRRM IDSM/IRSM DS11813 - Rev 3 Test conditions VD = VDRM, VR = VRRM VD = VDSM, VR = VRSM page 2/11 TN3050H-12GY-TR Characteristics Table 3. Thermal parameters Symbol DS11813 - Rev 3 Parameter Rth(j-c) Junction to case (DC, max.) Rth(j-a) Junction to ambient (DC, typ., Scu = 1 cm2) Value Unit 0.8 D²PAK 45 °C/W page 3/11 TN3050H-12GY-TR Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Maximum average power dissipation versus average on-state current 30 Figure 2. Average and DC on-state current versus case temperature P(W) 35 D.C α = 180 ° IT(AV) (A) α = 120 ° 25 α = 60 ° 20 D.C 30 α = 90 ° 25 α = 30 ° α = 60 ° α = 90 ° α = 120 ° α = 180 ° α = 30 ° 20 15 15 10 10 5 5 IT(AV) (A) T C (°C) 0 0 0 5 10 15 20 Figure 3. On-state characteristics (maximum values) 1000 0 25 25 50 75 100 125 150 Figure 4. Average and D.C. on-state current versus ambient temperature ITM(A) 4.0 IT(AV) (A) 3.5 D.C 3.0 100 2.5 α = 180 ° 2.0 1.5 10 Tj = 150 °C VTM (V) Tj = 25 °C At Tj max : Vto = 0.88 V Rd = 14 mΩ 1 0.0 DS11813 - Rev 3 1.0 2.0 3.0 4.0 1.0 Tamb(°C) 0.5 0.0 0 25 50 75 100 125 150 page 4/11 TN3050H-12GY-TR Characteristics (curves) Figure 5. Relative variation of thermal impedance junction to case and junction to ambient versus pulse duration 1.0E+00 K = [Zth/Rth] Figure 6. Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35 μm) Rth(j-a) (°C/W) 80 D²PAK Zth(j-c) 70 Zth(j-a) Epoxy printed board FR4, copper thickness = 35 µm 60 1.0E-01 50 40 30 1.0E-02 20 10 t P(s) 1.0E-03 1.0E-03 0 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 0 1.0E+03 5 10 15 20 25 30 35 40 SCu (cm²) Figure 7. Surge peak on-state current versus number of cycles 350 ITSM(A) Figure 8. Non repetitive surge peak on-state current for a sinusoidal pulse (tp < 10 ms) 10000 ITSM(A) dI/dt limitation: 200 A/µs Tj initial = 25 °C VR = 0 V 300 ITSM 250 1000 Non repetitive Tj initial = 25 °C 200 150 100 100 VR = 0 V Repetitive TC = 126 °C 50 tP (ms) Number of cycles 10 0.01 0 1 10 100 1000 Figure 9. Relative variation of holding and latching current versus junction temperature (typical values) 2.0 IH , IL [T j ]/ IH , IL [T j = 25 °C] 2.0 10.00 IGT,VGT [T j ] / IGT,VGT [T j = 25 °C] IGT IH 1.5 1.5 IL 1.0 1.0 VGT 0.8 0.5 0.5 0.3 -50 1.00 Figure 10. Relative variation of gate triggering current and voltage versus junction temperature 1.8 1.3 0.10 Tj(°C) Tj(°C) -25 DS11813 - Rev 3 0 25 50 75 100 125 150 0.0 -50 -25 0 25 50 75 100 125 150 page 5/11 TN3050H-12GY-TR Characteristics (curves) Figure 11. Relative variation of leakage current versus junction temperature for different values of blocking voltage 1.0E+00 IDRM,IRRM [T j ;V DRM,VRRM] / IDRM,IRRM [150 °C; 1200 V] Figure 12. Relative variation of the static dV/dt immunity versus junction temperature (typical values) 7 dV/dt[Tj ]/dV/dt[Tj = 150 °C] VD = 0.67 x V DRM 6 1.0E-01 5 VDRM = VRRM = 1200 V 4 1.0E-02 3 1.0E-03 VDRM = VRRM = 1000 V 2 1.0E-04 1 Tj(°C) 1.0E-05 25 DS11813 - Rev 3 50 75 100 125 Tj(°C) 0 150 25 50 75 100 125 150 page 6/11 TN3050H-12GY-TR Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 D²PAK package information • • • Package molding resin is halogen free and meets UL94 level V0 Lead-free package leads Cooling method: by conduction (C) Figure 13. D²PAK package outline DS11813 - Rev 3 page 7/11 TN3050H-12GY-TR D²PAK package information Table 4. D²PAK package mechanical data Dimensions Ref. Inches(1) Millimeters Min. Typ. Max. Min. Typ. Max. A 4.40 4.60 0.1732 0.1811 A1 0.03 0.23 0.0012 0.0091 b 0.70 0.93 0.0276 0.0366 b2 1.14 1.70 0.0449 0.0669 c 0.45 0.60 0.0177 0.0236 c2 1.23 1.36 0.0484 0.0535 D 8.95 9.35 0.3524 0.3681 D1 7.50 7.75 8.00 0.2953 0.3051 0.3150 D2 1.10 1.30 1.50 0.0433 0.0511 0.0591 E 10 10.40 0.3937 E1 8.50 8.70 8.90 0.3346 0.3425 0.3504 E2 6.85 7.05 7.25 0.2697 0.2776 0.2854 e 2.54 0.4094 0.1000 e1 4.88 5.28 0.1921 0.2079 H 15 15.85 0.5906 0.6240 J1 2.49 2.69 0.0980 0.1059 L 2.29 2.79 0.0902 0.1098 L1 1.27 1.40 0.0500 0.0551 L2 1.30 1.75 0.0512 0.0689 R V2 0.4 0° 0.0157 8° 0° 8° 1. Dimensions in inches are given for reference only Figure 14. D²PAK recommended footprint (dimensions are in mm) Footprint DS11813 - Rev 3 page 8/11 TN3050H-12GY-TR Ordering information 3 Ordering information Table 5. Ordering information DS11813 - Rev 3 Order code Marking Package Weight Base qty. Delivery mode TN3050H-12GY-TR TN3050H12Y D²PAK 1.4 g 1000 Tape and reel page 9/11 TN3050H-12GY-TR Revision history Table 6. Document revision history DS11813 - Rev 3 Date Revision Changes 01-Sep-2016 1 Initial release. 24-Aug-2017 2 Minor text changes to improve readability. Updated Section "Features", Table 2: "Absolute ratings (limiting values)" and Section 2: "Package information". 17-Sep-2019 3 Updated Section Description and Table 1. Absolute ratings (limiting values). page 10/11 TN3050H-12GY-TR IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS11813 - Rev 3 page 11/11