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TS2012IQT

TS2012IQT

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    VFQFN20_EP

  • 描述:

    IC AMP AUDIO PWR 2.8W STER 20QFN

  • 数据手册
  • 价格&库存
TS2012IQT 数据手册
TS2012 Filter-free stereo 2x2.8 W class D audio power amplifier Datasheet - production data Features TS2012 - QFN20 (4x4 mm) • Operating range from VCC = 2.5 V to 5.5 V • Standby mode active low • Output power per channel: 1.35 W @ 5 V or 0.68 W @ 3.6 V into 8 Ω with 1 % THD+N max • Output power per channel: 2.2 W @ 5 V into 4 Ω with 1 % THD+N max Pin connections (top view) Lin+ 17 • Four gains can be selected: 6, 12, 18, 24 dB 16 • Low current consumption Rin+ AGND 18 Rin- 19 Lin- 20 • PSRR: 70 dB typ @ 217 Hz with 6 dB gain 14 • Thermal shutdown protection 3 PVCC PVCC 13 • QFN20 4x4 mm lead-free package 4 PGND PGND 12 Applications 5 Lout- Rout- 11 • Cellular phone NC Rout+ AVCC Lout+ 2 STBYR • Fast startup phase: 1 ms STBYL 15 G1 NC G0 1 6 7 8 9 10 • PDA • Flat panel TV Description 20 LIN + 19 LIN - 15 G0 1 G1 Gain 3 13 PVCC PVCC AVCC 9 Block diagram H PWM Select Bridge LOUT+ 2 LOUT- 5 The device has four different gain settings utilizing two discrete pins: G0 and G1. Standby 18 PGND PGND Control 4 STBY R Bridge 12 STBY L 8 PWM Select 300k 7 H Gain AGND RIN - 300k RIN + 17 300k 300k Oscillator 16 July 2013 This is information on a product in full production. The TS2012 is a fully differential, class D, power amplifier stereo. It is able to drive up to 1.35 W into an 8 Ω load at 5 V per channel. It achieves outstanding efficiency compared to typical class AB audio amps. ROUT+ 14 ROUT- 11 Pop and click reduction circuitry provides low on/off switch noise while allowing the device to start within 1 ms. Two standby pins (active low) allow each channel to be switched off independently. The TS2012 is available in a QFN20 4x4 mm package. DocID14236 Rev 2 1/29 www.st.com Contents TS2012 Contents 1 Absolute maximum ratings and operating conditions . . . . . . . . . . . . . 3 2 Typical application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 5 3.1 Electrical characteristic tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.2 Electrical characteristic curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.1 Differential configuration principle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.2 Gain settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.3 Common mode feedback loop limitations . . . . . . . . . . . . . . . . . . . . . . . . 21 4.4 Low frequency response . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 4.5 Decoupling of the circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 4.6 Wakeup time (twu) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 4.7 Shutdown time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 4.8 Consumption in shutdown mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 4.9 Single-ended input configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 4.10 Output filter considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 5.1 QFN20 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 6 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 2/29 DocID14236 Rev 2 TS2012 1 Absolute maximum ratings and operating conditions Absolute maximum ratings and operating conditions Table 1. Absolute maximum ratings Symbol VCC Vi Parameter Value Supply voltage (1) Input voltage 6 (2) Operating free air temperature range -40 to + 85 Tstg Storage temperature -65 to +150 Rthja Pd ESD Maximum junction temperature Thermal resistance junction to ambient °C 150 (3) Power dissipation 100 Internally HBM: human body model(5) kV 200 V 200 mA GND to VCC V 260 °C MM: machine model Standby pin voltage maximum voltage °C/W limited(4) 2 (6) Latch-up Latch-up immunity VSTBY V GND to VCC Toper Tj Unit Lead temperature (soldering, 10 s) 1. All voltage values are measured with respect to the ground pin. 2. The magnitude of the input signal must never exceed VCC + 0.3 V / GND - 0.3 V. 3. The device is protected in case of over temperature by a thermal shutdown active @ 150 °C. 4. Exceeding the power derating curves over a long period causes abnormal operation. 5. Human body model: 100 pF discharged through a 1.5 kΩ resistor between two pins of the device, done for all couples of pin combinations with other pins floating. 6. Machine model: a 200 pF cap is charged to the specified voltage, then discharged directly between two pins of the device with no external series resistor (internal resistor < 5 Ω), done for all couples of pin combinations with other pins floating. DocID14236 Rev 2 3/29 29 Absolute maximum ratings and operating conditions TS2012 Table 2. Operating conditions Symbol VCC VI Vic Parameter Supply voltage Value Unit 2.5 to 5.5 Input voltage range GND to VCC Input common mode voltage (1) GND+0.5V to VCC-0.9V V (2) VSTBY Standby voltage input Device ON Device in STANDBY(3) 1.4 ≤ VSTBY ≤ VCC GND ≤ VSTBY ≤ 0.4 ≥4 RL Load resistor VIH GO, G1 - high level input voltage(4) 1.4 ≤ VIH ≤ VCC VIL GO, G1 - low level input voltage GND ≤ VIL ≤ 0.4 Rthja Thermal resistance junction to ambient(5) 40 Ω V °C/W 1. I Voo I ≤ 40 mV max with all differential gains except 24 dB. For 24 dB gain, input decoupling caps are mandatory. 2. Without any signal on VSTBY, the device is in standby (internal 300 kΩ ± 20 % pull-down resistor). 3. Minimum current consumption is obtained when VSTBY = GND. 4. Between G0, G1pins and GND, there is an internal 300kΩ (±20 %) pull-down resistor. When pins are floating, the gain is 6 dB. In full standby (left and right channels OFF), these resistors are disconnected (HiZ input). 5. With 4-layer PCB. 4/29 DocID14236 Rev 2 TS2012 Typical application 2 Typical application Figure 1. Typical application schematics Cs VCC 100nF Input capacitors are optional CsL 1μ F VCC VCC CsR 1μ F Gain Select Control LIN + Cin LIN - Left IN- PVCC AVCC Cin Differential Left Input PVCC TS2012 Left IN+ Gain H PWM Select Bridge LOUT+ Left speaker LOUT- G0 Oscillator G1 Cin Right IN- STBY L STBY R Gain H PWM Select Bridge ROUT+ ROUT- Right speaker Standby Control PGND Differential Right Input RIN - PGND Cin AGND RIN + Right IN+ Standby Control Cs VCC 100nF Input capacitors are optional CsL 1μ F VCC VCC CsR 1μ F Gain Select Control LIN + Cin LIN - Left IN- PVCC AVCC Cin Differential Left Input PVCC TS2012 Left IN+ H Gain PWM Select Bridge LOUT+ LOUT- LC Output Filter Load LC Output Filter Load G0 Oscillator G1 Right IN- Cin STBY L STBY R Gain H PWM Select Bridge ROUT+ ROUT- Standby Control PGND Differential Right Input RIN - PGND Cin AGND RIN + Right IN+ 4Ω LC Output Filter Standby Control 8Ω LC Output Filter 30μH 15μH 1μ F 2μ F 15μH DocID14236 Rev 2 2μ F 30μH 1μ F 5/29 29 Typical application TS2012 Table 3. External component descriptions Components Functional description CS, CSL, CSR Supply capacitor that provides power supply filtering. Cin Input coupling capacitors (optional) that block the DC voltage at the amplifier input terminal. The capacitors also form a high pass filter with Zin (Fcl = 1 / (2 x π x Zin x Cin)). Table 4. Pin descriptions Pin number Pin name 1 G1 2 Lout+ Left channel positive output 3 PVCC Power supply 4 PGND Power ground 5 Lout- Left channel negative output 6 NC 7 STBYL Standby pin (active low) for left channel output 8 STBYR Standby pin (active low) for right channel output 9 AVCC 10 NC 11 Rout- Right channel negative output 12 PGND Power ground 13 PVCC Power supply 14 Rout+ Right channel positive output 15 G0 16 Rin+ Right channel positive differential input 17 Rin- Right channel negative differential input 18 AGND 19 Lin- Left channel negative differential input 20 Lin+ Left channel positive differential input Thermal pad 6/29 Pin description Gain select pin (MSB) No internal connection Analog supply No internal connection Gain select pin (LSB) Analog ground Connect the thermal pad of the QFN package to PCB ground DocID14236 Rev 2 TS2012 Electrical characteristics 3 Electrical characteristics 3.1 Electrical characteristic tables Table 5. VCC = +5 V, GND = 0 V, Vic = 2.5 V, Tamb = 25 °C (unless otherwise specified) Symbol ICC ISTBY Parameters and test conditions Supply current No input signal, no load, both channels Standby current No input signal, VSTBY = GND Voo Output offset voltage Floating inputs, G = 6dB, RL = 8Ω Po Output power THD + N = 1 % max, f = 1 kHz, RL = 4 Ω THD + N = 1 % max, f = 1 kHz, RL = 8 Ω THD + N = 10 % max, f = 1 kHz, RL = 4 Ω THD + N = 10 % max, f = 1 kHz, RL = 8 Ω THD + N Total harmonic distortion + noise Po = 0.8 W, G = 6 dB, f =1 kHz, RL = 8 Ω Efficiency Efficiency per channel Po = 2.2 W, RL = 4 Ω +15 µH Po = 1.25 W, RL = 8 Ω+15 µH PSRR Crosstalk CMRR Min. Typ. Max. Unit 5 8 mA 0.2 2 µA 25 mV 2.2 1.35 2.8 1.65 W 0.07 % 81 89 Power supply rejection ratio with inputs grounded Cin = 1 µF (1), f = 217 Hz, RL = 8 Ω, Gain = 6 dB, Vripple = 200 mVpp 70 Channel separation Po = 0.9 W, G = 6 dB, f = 1 kHz, RL = 8 Ω 90 Common mode rejection ratio Cin = 1 µF, f = 217 Hz, RL = 8 Ω, Gain = 6 dB, ΔVICM = 200 mVpp 70 Gain value G1 = G0 = VIL G1 = VIL & G0 = VIH G1 = VIH & G0 = VIL G1 = G0 = VIH dB 5.5 11.5 17.5 23.5 6 12 18 24 6.5 12.5 18.5 24.5 Single ended input impedance All gains, referred to ground 24 30 36 kΩ FPWM Pulse width modulator base frequency 190 280 370 kHz SNR Signal to noise ratio (A-weighting) Po = 1.3 W, G = 6 dB, RL = 8 Ω 99 tWU Wakeup time 1 tSTBY Standby time 1 Gain Zin DocID14236 Rev 2 dB 3 ms 7/29 29 Electrical characteristics TS2012 Table 5. VCC = +5 V, GND = 0 V, Vic = 2.5 V, Tamb = 25 °C (unless otherwise specified) (continued) Symbol VN Parameters and test conditions Output voltage noise f = 20 Hz to 20 kHz, RL=8 Ω Unweighted (filterless, G = 6 dB) A-weighted (filterless, G = 6 dB) Unweighted (with LC output filter, G = 6 dB) A-weighted (with LC output filter, G = 6 dB) Unweighted (filterless, G = 24 dB) A-weighted (filterless, G = 24 dB) Unweighted (with LC output filter, G = 24 dB) A-weighted (with LC output filter, G = 24 dB) Min. Typ. 63 35 60 35 115 72 109 71 Max. Unit µVRMS 1. Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the superimposed sinus signal to VCC @ f = 217 Hz. 8/29 DocID14236 Rev 2 TS2012 Electrical characteristics Table 6. VCC = +3.6 V, GND = 0 V, Vic = 1.8 V, Tamb = 25 °C (unless otherwise specified) Symbol ICC ISTBY Parameter Typ. Max. Unit Supply current No input signal, no load, both channels 3.3 6.5 mA Standby current No input signal, VSTBY = GND 0.2 2 µA 25 mV Voo Output offset voltage Floating inputs, G = 6dB, RL = 8Ω Po Output power THD + N = 1 % max, f = 1 kHz, RL = 4 Ω THD + N = 1 % max, f = 1 kHz, RL = 8 Ω THD + N = 10 % max, f = 1 kHz, RL = 4 Ω THD + N = 10 % max, f = 1 kHz, RL = 8 Ω THD + N Total harmonic distortion + noise Po = 0.4 W, G = 6 dB, f =1 kHz, RL = 8 Ω Efficiency Efficiency per channel Po = 1.15 W, RL = 4 Ω +15 µH Po = 0.68 W, RL = 8 Ω +15 µH PSRR Crosstalk CMRR Min. 1.15 0.68 1.3 0.9 W 0.05 % 80 88 Power supply rejection ratio with inputs grounded Cin= 1 µF (1), f = 217 Hz, RL = 8 Ω, Gain = 6 dB, Vripple = 200 mVpp 70 Channel separation Po = 0.5 W, G = 6 dB, f =1 kHz, RL = 8 Ω 90 Common mode rejection ratio Cin = 1 µF, f = 217 Hz, RL = 8 Ω, Gain = 6 dB, ΔVICM = 200 mVpp 70 Gain value G1 = G0 = VIL G1 = VIL & G0 = VIH G1 = VIH & G0 = VIL G1 = G0 = VIH dB 5.5 11.5 17.5 23.5 6 12 18 24 6.5 12.5 18.5 24.5 Single ended input impedance All gains, referred to ground 24 30 36 kΩ FPWM Pulse width modulator base frequency 190 280 370 kHz SNR Signal to noise ratio (A-weighting) Po = 0.65 W, G = 6 dB, RL = 8 Ω 96 tWU Wakeup time 1 tSTBY Standby time 1 Gain Zin DocID14236 Rev 2 dB 3 ms 9/29 29 Electrical characteristics TS2012 Table 6. VCC = +3.6 V, GND = 0 V, Vic = 1.8 V, Tamb = 25 °C (unless otherwise specified) (continued) Symbol VN Parameter Output voltage noise f = 20 Hz to 20 kHz, RL= 4 Ω Unweighted (filterless, G = 6 dB) A-weighted (filterless, G = 6 dB) Unweighted (with LC output filter, G = 6 dB) A-weighted (with LC output filter, G = 6 dB) Unweighted (filterless, G = 24 dB) A-weighted (filterless, G = 24 dB) Unweighted (with LC output filter, G = 24 dB) A-weighted (with LC output filter, G = 24 dB) Min. Typ. 58 34 55 34 111 70 105 69 Max. Unit µVRMS 1. Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the superimposed sinus signal to VCC @ f = 217 Hz. 10/29 DocID14236 Rev 2 TS2012 Electrical characteristics Table 7. VCC = +2.5V, GND = 0V, Vic=1.25V, Tamb = 25°C (unless otherwise specified) Symbol ICC ISTBY Parameter Typ. Max. Unit Supply current No input signal, no load, both channels 2.8 4 mA Standby current No input signal, VSTBY = GND 0.2 2 µA 25 mV Voo Output offset voltage Floating inputs, G = 6dB, RL = 8Ω Po Output power THD + N = 1 % max, f = 1 kHz, RL = 4 Ω THD + N = 1 % max, f = 1 kHz, RL = 8 Ω THD + N = 10 % max, f = 1 kHz, RL = 4 Ω THD + N = 10 % max, f = 1 kHz, RL = 8 Ω THD + N Total harmonic distortion + noise Po = 0.2 W, G = 6 dB, f =1 kHz, RL = 8 Ω Efficiency Efficiency per channel Po = 0.53 W, RL = 4 Ω +15 µH Po = 0.32 W, RL = 8 Ω+15 µH PSRR Crosstalk CMRR Min. 0.53 0.32 0.75 0.45 W 0.04 % 80 88 Power supply rejection ratio with inputs grounded Cin = 1 µF (1), f = 217 Hz, RL = 8 Ω, Gain = 6 dB, Vripple = 200 mVpp 70 Channel separation Po = 0.2 W, G = 6 dB, f = 1 kHz, RL = 8 Ω 90 Common mode rejection ratio Cin = 1 µF, f = 217 Hz, RL = 8 Ω, Gain = 6 dB, ΔVICM = 200 mVpp 70 Gain value G1 = G0 = VIL G1 = VIL & G0 = VIH G1 = VIH & G0 = VIL G1 = G0 = VIH dB 5.5 11.5 17.5 23.5 6 12 18 24 6.5 12.5 18.5 24.5 Single ended input impedance All gains, referred to ground 24 30 36 kΩ FPWM Pulse width modulator base frequency 190 280 370 kHz SNR Signal to noise ratio (A-weighting) Po = 0.3 W, G = 6 dB, RL = 8 Ω 93 tWU Wakeup time 1 tSTBY Standby time 1 Gain Zin DocID14236 Rev 2 dB 3 ms 11/29 29 Electrical characteristics TS2012 Table 7. VCC = +2.5V, GND = 0V, Vic=1.25V, Tamb = 25°C (unless otherwise specified) (continued) Symbol VN Parameter Min. Output voltage noise f = 20 Hz to 20 kHz, RL = 8 Ω Unweighted (filterless, G = 6 dB) A-weighted (filterless, G = 6 dB) Unweighted (with LC output filter, G = 6 dB) A-weighted (with LC output filter, G = 6 dB) Unweighted (filterless, G = 24 dB) A-weighted (filterless, G = 24 dB) Unweighted (with LC output filter, G = 24 dB) A-weighted (with LC output filter, G = 24 dB) Typ. Max. 57 34 54 33 110 71 104 69 Unit µVRMS 1. Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the superimposed sinus signal to VCC @ f = 217 Hz. 3.2 Electrical characteristic curves The graphs shown in this section use the following abbreviations: • RL+ 15 µH or 30 µH = pure resistor + very low series resistance inductor • Filter = LC output filter (1 µF + 30 µH for 4 Ω and 0.5 µF + 60 µH for 8 Ω) All measurements are made with CSL = CSR = 1 µF and CS = 100 nF (see Figure 2), except for the PSRR where CSL,R is removed (see Figure 3). Figure 2. Test diagram for measurements Vcc CsL (CsR) 1μF GND Cin In+ Cin GND RL 4 or 8 Ω Out+ 15μH or 30μH 1/2 TS2012 In- CS 100nF Out- or LC Filter GND Audio Measurement Bandwith < 30kHz 12/29 DocID14236 Rev 2 5th order 50kHz low-pass filter TS2012 Electrical characteristics Figure 3. Test diagram for PSRR measurements VCC Cs 100nF 20Hz to 20kHz Vripple GND 1 μF Cin GND Out+ In+ RL 4 or 8 Ω 15μH or 30μH 1/2 TS2012 In- or LC Filter Out- Cin 1 μF GND Vcc 5th order 50kHz low-pass filter GND 5th order reference 50kHz RMS Selective Measurement Bandwith =1% of Fmeas low-pass filter Table 8. Index of graphics Description Figure Current consumption vs. power supply voltage Figure 4 Current consumption vs. standby voltage Figure 5 Efficiency vs. output power Figure 6 - Figure 9 Output power vs. power supply voltage Figure 10, Figure 11 PSRR vs. common mode input voltage Figure 12 PSRR vs. frequency Figure 13 CMRR vs. common mode input voltage Figure 14 CMRR vs. frequency Figure 15 Gain vs. frequency Figure 16, Figure 17 THD+N vs. output power Figure 18 - Figure 25 THD+N vs. frequency Figure 26 - Figure 37 Crosstalk vs. frequency Figure 38 - Figure 41 Power derating curves Figure 42 Startup and shutdown time Figure 43, Figure 44 DocID14236 Rev 2 13/29 29 Electrical characteristics TS2012 Figure 4. Current consumption vs. power supply voltage 4 Both channels ON One channel ON 3 2 1 0 2.5 3.0 3.5 4.0 4.5 5.0 2.0 VCC=5V 1.5 VCC=2.5V 0.5 0.0 5.5 VCC=3.6V 1.0 No Load TAMB=25°C 0 1 2 Power Supply Voltage (V) Figure 6. Efficiency vs. output power (i) 500 Efficiency 60 75 0 0.0 0.1 50 Vcc=2.5V RL=4Ω + ≥ 15μ H F=1kHz THD+N≤ 1% 0.2 0.3 Output Power (W) 0.4 25 Efficiency (%) 100 Power Dissipation (mW) Efficiency (%) 80 20 20 0 0.00 14/29 0.05 Vcc=2.5V RL=8Ω + ≥ 15μ H F=1kHz THD+N≤ 1% 0.10 0.15 0.20 Output Power (W) 0.25 200 40 80 20 Power Dissipation 40 100 30 40 300 50 10 0 0.30 Efficiency (%) 60 60 Power Dissipation 0.5 1.0 Output Power (W) Vcc=5V RL=4Ω + ≥ 15μ H F=1kHz THD+N≤ 1% 100 0 2.0 1.5 Figure 9. Efficiency vs. output power (iv) Power Dissipation (mW) Efficiency (%) Efficiency 400 0 0.0 0 0.5 100 80 20 Figure 8. Efficiency vs. output power (iii) 80 5 100 Efficiency Power Dissipation 4 Figure 7. Efficiency vs. output power (ii) 125 100 40 3 Standby Voltage (V) Power Dissipation (mW) No Loads 200 160 Efficiency 120 60 80 40 Power Dissipation 20 0 0.0 DocID14236 Rev 2 0.2 0.4 0.6 0.8 Output Power (W) Vcc=5V RL=8Ω + ≥ 15μ H F=1kHz THD+N≤ 1% 1.0 1.2 40 0 1.4 Power Dissipation (mW) 5 2.5 TAMB=25°C Current Consumption (mA) Current Consumption (mA) 6 Figure 5. Current consumption vs. standby voltage (one channel) TS2012 Electrical characteristics Figure 10. Output power vs. power supply voltage (i) Figure 11. Output power vs. power supply voltage (ii) 3.5 2.5 1.6 Output Power (W) Output Power (W) 3.0 2.0 RL = 4Ω + ≥ 15μ H F = 1kHz BW < 30kHz Tamb = 25°C THD+N=10% 2.0 1.5 1.0 THD+N=1% 3.0 3.5 4.0 4.5 Power Supply Voltage (V) 5.0 1.2 0.8 0.0 2.5 5.5 Figure 12. PSRR vs. common mode input voltage Vcc=3V -20 Vcc=5V PSRR (dB) PSRR(dB) Vcc=2.5V Gain=24dB Gain=6dB -50 -40 -70 -70 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Common Mode Input Voltage (V) 4.5 -80 5.0 Gain=24dB -50 -60 20 10k 20k Δ Vicm=200mVpp, Vcc = 2.5, 3.6, 5V RL ≥ 4Ω + ≥ 15μ H, Cin=1μ F, Tamb=25° C -10 -20 Gain=24dB Gain=6dB -50 Vcc=2.5V CMRR (dB) CMRR(dB) 1k 0 Δ Vicm=200mVpp, F = 217Hz RL ≥ 4Ω + ≥ 15μ H, Tamb = 25° C -20 Vcc=3V Vcc=5V -30 -40 -60 -70 -70 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Common Mode Input Voltage (V) 4.5 5.0 Gain=24dB Gain=6dB -50 -60 -80 0.0 100 Gain=6dB Figure 15. CMRR vs. frequency 0 -40 5.5 Frequency (Hz) Figure 14. CMRR vs. common mode input voltage -30 5.0 -30 -60 -10 3.5 4.0 4.5 Power Supply Voltage (V) Inputs grounded, Vripple = 200mVpp RL ≥ 4Ω + ≥ 15μ H, Cin=1μ F, Tamb=25° C Vcc = 2.5, 3.6, 5V -10 -30 -80 0.0 3.0 0 Vripple = 200mVpp, F = 217Hz RL ≥ 4Ω + ≥ 15μ H, Tamb = 25° C -20 -40 THD+N=1% Figure 13. PSRR vs. frequency 0 -10 THD+N=10% 0.4 0.5 0.0 2.5 RL = 8Ω + ≥ 15μ H F = 1kHz BW < 30kHz Tamb = 25° C -80 20 100 1k 10k 20k Frequency (Hz) DocID14236 Rev 2 15/29 29 Electrical characteristics TS2012 Figure 16. Gain vs. frequency (i) Figure 17. Gain vs. frequency (ii) 26 8 no load no load 24 4 Gain (dB) Gain (dB) 6 RL=8Ω +15μ H 22 RL=8Ω +15μ H RL=8Ω +30μ H RL=8Ω +30μ H Gain = 6dB Vin = 500mV Cin = 4.7μ F TAMB = 25° C 2 0 20 RL=4Ω +15μ H RL=4Ω +30μ H 100 1k Frequency (Hz) 10k 20k 18 Vcc=3.6V THD + N (%) THD + N (%) Vcc=5V Vcc=2.5V 1k 10k 20k 1 RL = 4Ω + 30μ H F = 1kHz G = 6dB BW < 30kHz Tamb = 25° C Vcc=5V Vcc=3.6V Vcc=2.5V 0.1 1E-3 0.01 0.1 Output Power (W) 1 1E-3 3 Figure 20. THD+N vs. output power (iii) 0.01 0.1 Output Power (W) 1 3 Figure 21. THD+N vs. output power (iv) 10 10 RL = 8Ω + 15μ H F = 1kHz G = 6dB BW < 30kHz Tamb = 25° C Vcc=5V Vcc=3.6V THD + N (%) THD + N (%) 100 10 RL = 4Ω + 15μ H F = 1kHz G = 6dB BW < 30kHz Tamb = 25° C 0.1 Vcc=2.5V 0.1 1E-3 16/29 RL=4Ω +30μ H Figure 19. THD+N vs. output power (ii) 10 1 20 RL=4Ω +15μ H Frequency (Hz) Figure 18. THD+N vs. output power (i) 1 Gain = 24dB Vin = 5mV Cin = 4.7μ F TAMB = 25° C 20 1 RL = 8Ω + 30μ H F = 1kHz G = 6dB BW < 30kHz Tamb = 25° C Vcc=5V Vcc=3.6V Vcc=2.5V 0.1 0.01 0.1 Output Power (W) 1 2 1E-3 DocID14236 Rev 2 0.01 0.1 Output Power (W) 1 2 TS2012 Electrical characteristics Figure 22. THD+N vs. output power (v) Figure 23. THD+N vs. output power (vi) 10 RL = 4Ω + 15μ H F = 100Hz G = 6dB BW < 30kHz Tamb = 25° C 1 Vcc=3.6V Vcc=2.5V 0.01 1E-3 0.01 0.1 Output Power (W) 1 0.01 1E-3 3 Figure 24. THD+N vs. output power (vii) Vcc=2.5V 0.01 0.1 Output Power (W) Vcc=5V RL = 8Ω + 30μ H F = 100Hz G = 6dB BW < 30kHz Tamb = 25° C Vcc=3.6V THD + N (%) 1 Vcc=2.5V 3 1 Vcc=5V Vcc=3.6V Vcc=2.5V 0.1 0.01 1E-3 0.01 0.1 Output Power (W) 1 0.01 1E-3 2 Figure 26. THD+N vs. frequency (i) 0.01 0.1 Output Power (W) 1 2 Figure 27. THD+N vs. frequency (ii) 10 10 Po=0.4W RL=4Ω + 30μ H G=6dB BW < 30kHz Vcc=2.5V Tamb = 25° C 1 THD + N (%) RL=4Ω + 15μ H G=6dB BW < 30kHz Vcc=2.5V Tamb = 25° C 0.1 Po=0.4W 0.1 Po=0.2W Po=0.2W 0.01 1 10 RL = 8Ω + 15μ H F = 100Hz G = 6dB BW < 30kHz Tamb = 25° C 0.1 THD + N (%) Vcc=3.6V Figure 25. THD+N vs. output power (viii) 10 THD + N (%) 1 Vcc=5V 0.1 0.1 1 RL = 4Ω + 30μ H F = 100Hz G = 6dB BW < 30kHz Tamb = 25° C Vcc=5V THD + N (%) THD + N (%) 10 20 100 1000 Frequency (Hz) 10000 20k 0.01 20 DocID14236 Rev 2 100 1000 Frequency (Hz) 10000 20k 17/29 29 Electrical characteristics TS2012 Figure 28. THD+N vs. frequency (iii) Figure 29. THD+N vs. frequency (iv) 10 10 RL=8Ω + 15μ H G=6dB BW < 30kHz Vcc=2.5V Tamb = 25° C Po=0.2W 1 THD + N (%) THD + N (%) 1 RL=8Ω + 30μ H G=6dB BW < 30kHz Vcc=2.5V Tamb = 25° C 0.1 Po=0.2W 0.1 Po=0.1W 0.01 20 100 Po=0.1W 10000 20k 1000 Frequency (Hz) 0.01 Figure 30. THD+N vs. frequency (v) 100 1000 Frequency (Hz) 10000 20k Figure 31. THD+N vs. frequency (vi) 10 10 RL=4Ω + 30μ H G=6dB BW < 30kHz Vcc=3.6V Tamb = 25° C Po=0.9W 1 THD + N (%) RL=4Ω + 15μ H G=6dB BW < 30kHz Vcc=3.6V Tamb = 25° C 1 THD + N (%) 20 0.1 Po=0.9W 0.1 Po=0.45W Po=0.45W 0.01 20 100 1000 Frequency (Hz) 10000 20k 0.01 Figure 32. THD+N vs. frequency (vii) 1000 Frequency (Hz) RL=8Ω + 30μ H G=6dB BW < 30kHz Vcc=3.6V Tamb = 25°C Po=0.5W 1 0.1 Po=0.5W 0.1 Po=0.25W 0.01 18/29 10000 20k 10 RL=8Ω + 15μ H G=6dB BW < 30kHz Vcc=3.6V Tamb = 25°C THD + N (%) THD + N (%) 100 Figure 33. THD+N vs. frequency (viii) 10 1 20 20 100 1000 Frequency (Hz) 10000 20k Po=0.25W 0.01 20 DocID14236 Rev 2 100 1000 Frequency (Hz) 10000 20k TS2012 Electrical characteristics Figure 34. THD+N vs. frequency (ix) Figure 35. THD+N vs. frequency (x) 10 10 THD + N (%) 1 Po=1.5W RL=4Ω + 30μ H G=6dB BW < 30kHz Vcc=5V Tamb = 25° C 1 THD + N (%) RL=4Ω + 15μ H G=6dB BW < 30kHz Vcc=5V Tamb = 25° C 0.1 Po=1.5W 0.1 Po=0.75W 0.01 20 100 1000 Frequency (Hz) Po=0.75W 0.01 10000 20k 20 Figure 36. THD+N vs. frequency (xi) 1000 Frequency (Hz) 10 RL=8Ω + 30μ H G=6dB BW < 30kHz Vcc=5V Tamb = 25° C Po=0.9W 1 THD + N (%) RL=8Ω + 15μ H G=6dB BW < 30kHz Vcc=5V Tamb = 25° C 1 0.1 Po=0.9W 0.1 Po=0.45W 0.01 20 100 1000 Frequency (Hz) Po=0.45W 0.01 10000 20k Figure 38. Crosstalk vs. frequency (i) 0 0 R -> L -60 -80 -100 -120 100 1k 10k 1000 Frequency (Hz) 10000 20k -40 -60 R -> L -80 -100 L -> R 20 100 Vcc=2.5, 3.6, 5V RL=8Ω +30μ H Gain = 6dB TAMB = 25° C -20 Crosstalk (dB) -40 20 Figure 39. Crosstalk vs. frequency (ii) Vcc=2.5, 3.6, 5V RL=4Ω +30μ H Gain = 6dB TAMB = 25° C -20 Crosstalk (dB) 10000 20k Figure 37. THD+N vs. frequency (xii) 10 THD + N (%) 100 L -> R 20k -120 20 Frequency (Hz) 100 1k 10k 20k Frequency (Hz) DocID14236 Rev 2 19/29 29 Electrical characteristics Figure 40. Crosstalk vs. frequency (iii) Figure 41. Crosstalk vs. frequency (iv) 0 0 Vcc = 2.5, 3.6, 5V RL = 4Ω +30μ H Gain = 24dB TAMB = 25° C -40 R -> L -60 -80 -100 QFN20 Package Power Dissipation (W) -120 100 1k 10k -40 R -> L -60 -80 -100 L -> R 20 Vcc=2.5, 3.6, 5V RL=8Ω +30μ H Gain = 24dB TAMB = 25° C -20 Crosstalk (dB) -20 Crosstalk (dB) TS2012 20k -120 L -> R 20 Figure 43. Startup and shutdown phase (i) With 4-layer PCB 2.5 2.0 No Heat sink 1.5 1.0 0.5 25 50 75 100 Ambient Temperature (° C) 125 150 Figure 44. Startup and shutdown phase (ii) 20/29 10k Figure 42. Power derating curves 3.0 0 1k Frequency (Hz) 3.5 0.0 100 Frequency (Hz) DocID14236 Rev 2 20k TS2012 Application information 4 Application information 4.1 Differential configuration principle The TS2012 is a monolithic fully-differential input/output class D power amplifier. The TS2012 also includes a common-mode feedback loop that controls the output bias value to average it at VCC/2 for any DC common mode input voltage. This allows the device to always have a maximum output voltage swing, and by consequence, maximize the output power. Moreover, as the load is connected differentially compared with a single-ended topology, the output is four times higher for the same power supply voltage. The advantages of a full-differential amplifier are: 4.2 • High PSRR (power supply rejection ratio) • High common mode noise rejection • Virtually zero pop without additional circuitry, giving a faster startup time compared with conventional single-ended input amplifiers • Easier interfacing with differential output audio DAC • No input coupling capacitors required thanks to common mode feedback loop Gain settings In the flat region of the frequency-response curve (no input coupling capacitor or internal feedback loop + load effect), the differential gain can be set to 6, 12 18, or 24 dB depending on the logic level of the G0 and G1 pins, as shown in Table 9. Table 9. Gain settings with G0 and G1 pins G1 G0 Gain (dB) Gain (V/V) 0 0 6 2 0 1 12 4 1 0 18 8 1 1 24 16 Note: Between pins G0, G1 and GND there is an internal 300 kΩ (±20 %) resistor. When the pins are floating, the gain is 6 dB. In full standby (left and right channels OFF), these resistors are disconnected (HiZ input). 4.3 Common mode feedback loop limitations The common mode feedback loop allows the output DC bias voltage to be averaged at VCC/2 for any DC common mode bias input voltage. Due to the Vic limitation of the input stage (see Table 2: Operating conditions), the common mode feedback loop can fulfill its role only within the defined range. DocID14236 Rev 2 21/29 29 Application information 4.4 TS2012 Low frequency response If a low frequency bandwidth limitation is required, it is possible to use input coupling capacitors. In the low frequency region, the input coupling capacitor, Cin, starts to have an effect. Cin, with the input impedance Zin, forms a first order, high-pass filter with a -3 dB cutoff frequency (see Table 5 to Table 7) as shown in Equation 1: Equation 1 1 F CL = -------------------------------------------2 ⋅ π ⋅ Z in ⋅ C in So, for a desired cut-off frequency, FCL, Cin is calculated as shown in Equation 2: Equation 2 1 C in = ---------------------------------------------2 ⋅ π ⋅ Z in ⋅ F CL with FCL in Hz, Zin in Ω and Cin in F. The input impedance Zin is typically 30 kΩ for the whole power supply voltage range. There is also a tolerance around the typical value (see Table 5 to Table 7). The maximum and minimum tolerance of the FCL can be calculated using Equation 3 and Equation 4 respectively. Equation 3 F CLmax = 1.103 ⋅ F CL Equation 4 F CLmin = 0.915 ⋅ FCL 4.5 Decoupling of the circuit Power supply capacitors, referred to as CS, CSL, and CSR are needed to correctly bypass the TS2012. The TS2012 has a typical switching frequency of 280 kHz and an output fall and rise time of about 5 ns. Due to these very fast transients, careful decoupling is mandatory. A 1 µF ceramic capacitor between each PVCC and PGND and also between AVCC and AGND is enough, but they must be located very close to the TS2012 in order to avoid any extra parasitic inductance created by a long track wire. Parasitic loop inductance, in relation to di/dt, introduces overvoltage that decreases the global efficiency of the device and may also cause a TS2012 breakdown if the parasitic inductance is too high. In addition, even if a ceramic capacitor has an adequate high frequency ESR value, its current capability is also important. A 0603 size is a good compromise, particularly when a 4 Ω load is used. 22/29 DocID14236 Rev 2 TS2012 Application information Another important parameter is the rated voltage of the capacitor. A 1 µF/6.3 V capacitor used at 5 V, loses about 50 % of its value. With a power supply voltage of 5 V, the decoupling value, instead of 1 µF, could be reduced to 0.5 µF. As CS has particular influence on the THD+N in the medium to high frequency region, this capacitor variation becomes decisive. In addition, less decoupling means higher overshoots which can be problematic if they reach the power supply AMR value (6 V). 4.6 Wakeup time (twu) When standby is released to set the device ON, there is typically a delay of 1 ms. The TS2012 has an internal digital delay that mutes the outputs and releases them after this delay time to avoid any pop noise. Note: The gain increases smoothly (see Figure 44) from the mute to the gain selected by the G1 and G0 pin (Section 4.2). 4.7 Shutdown time When the standby command is set, the time required to set the output stage to high impedance and to put the internal circuitry in shutdown mode, is typically 1 ms. This time is used to decrease the gain and avoid any pop noise during shutdown. Note: The gain decreases smoothly until the outputs are muted (see Figure 44). 4.8 Consumption in shutdown mode Between the shutdown pin and GND there is an internal 300 kΩ (±20 %) resistor. This resistor forces the TS2012 to be in shutdown when the shutdown input is left floating. However, this resistor also introduces additional shutdown power consumption if the shutdown pin voltage is not 0 V. For example, with a 0.4 V shutdown voltage pin, the following typical and maximum values respectively for each shutdown pin must be added to the standby current specified in Table 5 to Table 7: 0.4 V/300 kΩ = 1.3 µA and 0.4 V/240 kΩ = 1.66 µA. This current is provided by the external control device for standby pins. DocID14236 Rev 2 23/29 29 Application information 4.9 TS2012 Single-ended input configuration It is possible to use the TS2012 in a single-ended input configuration. However, input coupling capacitors are mandatory in this configuration. The schematic diagram in Figure 45 shows a typical single-ended input application. Figure 45. Typical application for single-ended input configuration Cs VCC 100nF CsL 1μ F VCC VCC CsR 1μ F Gain Select Control Cin LIN + PVCC AVCC Cin PVCC TS2012 Left Input Gain H PWM Select LIN - Bridge LOUT+ LOUT- Left speaker G0 Oscillator G1 RIN + H PWM Select STBY L STBY R Bridge ROUT+ ROUT- Right speaker Standby Control PGND Cin Gain RIN - PGND Cin AGND Right Input Standby Control 4.10 Output filter considerations The TS2012 is designed to operate without an output filter. However, due to very sharp transients on the TS2012 output, EMI radiated emissions may cause some standard compliance issues. These EMI standard compliance issues can appear if the distance between the TS2012 outputs and the loudspeaker terminal are long (typically more than 50 mm or 100 mm, in both directions, to the speaker terminals). As the PCB layout and internal equipment device are different for each configuration, it is difficult to provide a one-size-fits-all solution. However, to decrease the probability of EMI issues, the following simple rules should be followed: 24/29 • Reduce as much as possible the distance between the TS2012 output pins and the speaker terminals. • Use a ground plane for “shielding” sensitive wires. • Place, as close as possible to the TS2012 and in series with each output, a ferrite bead with a minimum rated current of 2.5 A and an impedance greater than 50 Ω at frequencies above 30 MHz. If, after testing, these ferrite beads are not necessary, replace them by a short-circuit. • Allow extra footprint to place, if necessary, a capacitor to short perturbations to ground (see Figure 46). DocID14236 Rev 2 TS2012 Application information Figure 46. Ferrite chip bead placement From output Ferrite chip bead to speaker about 100pF gnd If the distance between the TS2012 output and the speaker terminals is too long, it is possible to have low frequency EMI issues due to the fact that the typical operating frequency is 280 kHz. In this configuration, it is necessary to place the output filter shown in Figure 1: Typical application schematics as close as possible to the TS2012. DocID14236 Rev 2 25/29 29 Package information 5 TS2012 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 5.1 QFN20 package information The QFN20 package has an exposed pad E2 x D2. For enhanced thermal performance, the exposed pad must be soldered to a copper area on the PCB, acting as a heatsink. This copper area can be electrically connected to pin 4, 12, 18 (PGND, AGND) or left floating. Figure 47. QFN20 package mechanical drawing 26/29 DocID14236 Rev 2 TS2012 Package information Table 10. QFN20 package mechanical data Dimensions in mm Dimensions in inches Ref Min Typ Max Min Typ Max 0.8 0.9 1 0.031 0.035 0.039 A1 0.02 0.05 0.001 0.002 A2 0.65 1 0.026 0.039 A3 0.25 A 0.010 b 0.18 0.23 0.3 0.007 0.009 0.012 D 3.85 4 4.15 0.152 0.157 0.163 D2 2.6 E 3.85 E2 0.102 4 4.15 0.152 2.6 0.157 0.163 0.102 e 0.45 0.5 0.55 0.018 0.020 0.022 L 0.3 0.4 0.5 0.012 0.016 0.020 ddd 0.08 0.003 Figure 48. QFN20 footprint recommendation Table 11. QFN20 footprint data Ref. Dimensions in mm Dimensions in inches 4.55 0.179 C 0.50 0.020 D 0.35 0.014 E 0.65 0.026 F 2.45 0.096 G 0.40 0.016 A B DocID14236 Rev 2 27/29 29 Ordering information 6 TS2012 Ordering information Table 12. Order code Part number TS2012IQT 7 Temperature range Package Packaging Marking -40 °C to +85 °C QFN20 Tape and reel K012 Revision history Table 13. Document revision history Date Revision 17-Dec-2007 1 First release. 2 Small text changes throughout document. Updated titles of Figure 6 to Figure 11 and Figure 16 to Figure 44 Table 10: QFN20 package mechanical data: added package mechanical dimensions in inches. Added Table 11: QFN20 footprint data Table 12: Order code; updated “Marking” 17-Jul-2013 28/29 Changes DocID14236 Rev 2 TS2012 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2013 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com DocID14236 Rev 2 29/29 29
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