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TSH350ID

TSH350ID

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOIC-8

  • 描述:

    IC OPAMP CFA 1 CIRCUIT 8SO

  • 数据手册
  • 价格&库存
TSH350ID 数据手册
TSH350 550MHz low noise current feedback amplifier Features ■ Bandwidth: 550MHz in unity gain ■ Quiescent current: 4.1mA ■ Slew rate: 940V/μs ■ Input noise: 1.5nV/√Hz ■ Distortion: SFDR=-66dBc (10MHz, 1Vpp) ■ 2.8Vpp minimum output swing on 100Ω load for a 5V supply ■ Tested on 5V power supply u d o r P e SO-8 t e l o Pin connections (top view) Applications ■ Communication & video test equipment ■ Medical instrumentation ■ ADC drivers )- s b O s ( t c Description VCC - 2 du o r P 4 Inv. In. NC 1 8 NC Inv. In. 2 _ 7 VCC + Non-Inv. In. 3 + 6 Output 5 NC VCC - 4 The TSH350 is a single operator available in the tiny SOT23-5 and SO-8 plastic packages, saving board space as well as providing excellent thermal and dynamic performance. June 2007 +- SOT23-5 so b O 5 VCC + Output 1 Non-Inv. In. 3 The TSH350 is a current feedback operational amplifier using a very high-speed complementary technology to provide a bandwidth up to 410MHz while drawing only 4.1mA of quiescent current. With a slew rate of 940V/µs and an output stage optimized for driving a standard 100Ω load, this circuit is highly suitable for applications where speed and power-saving are the main requirements. e t e l ) s ( ct SOT23-5 SO-8 Rev 4 1/22 www.st.com 22 Absolute maximum ratings 1 TSH350 Absolute maximum ratings Table 1. Absolute maximum ratings (AMR) Symbol Value Unit 6 V +/-0.5 V +/-2.5 V -65 to +150 °C Maximum junction temperature 150 °C Rthja Thermal resistance junction to ambient SOT23-5 SO-8 250 150 Rthjc Thermal resistance junction to case SOT23-5 SO-8 Pmax VCC Vid Parameter Supply voltage (1) (2) Differential input voltage (3) Vin Input voltage range Tstg Storage temperature Tj ESD so b O u d o Pr °C/W 80 28 °C/W Maximum power dissipation(4) (@Tamb=25°C) for Tj=150°C SOT23-5 SO-8 500 830 mW HBM: human body model (5) pins 1, 4, 5, 6, 7 and 8 pins 2 and 3 2 0.5 kV MM: machine model (6) pins 1, 4, 5, 6, 7 and 8 pins 2 and 3 200 60 V CDM: charged device model(7) pins 1, 4, 5, 6, 7 and 8 pins 2 and 3 1.5 1.5 kV Latch-up immunity 200 mA ) (s e t e ol s b O ct u d o e t e l ) s ( ct Pr 1. All voltage values are measured with respect to the ground pin. 2. Differential voltage is the non-inverting input terminal with respect to the inverting input terminal. 3. The magnitude of input and output voltage must never exceed VCC +0.3V. 4. Short-circuits can cause excessive heating. Destructive dissipation can result from short-circuits on all amplifiers. 5. Human body model: A 100pF capacitor is charged to the specified voltage, then discharged through a 1.5kΩ resistor between two pins of the device. This is done for all couples of connected pin combinations while the other pins are floating. 6. Machine model: A 200pF capacitor is charged to the specified voltage, then discharged directly between two pins of the device with no external series resistor (internal resistor < 5Ω). This is done for all couples of connected pin combinations while the other pins are floating. 7. Charged device model: all pins and the package are charged together to the specified voltage and then discharged directly to the ground through only one pin. This is done for all pins. 2/22 TSH350 Absolute maximum ratings Table 2. Operating conditions Symbol Parameter (1) VCC Supply voltage Vicm Common mode input voltage Toper Operating free air temperature range Value Unit 4.5 to 5.5 V -VCC+1.5V to +VCC-1.5V V -40 to + 85 °C 1. Tested in full production at 5V (±2.5V) supply voltage. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 3/22 Electrical characteristics TSH350 2 Electrical characteristics Table 3. Electrical characteristics for VCC = ±2.5V, Tamb = 25°C (unless otherwise specified) Symbol Parameter Test conditions Min. Typ. Max. 0.8 4 Unit DC performance Tamb Vio Input offset voltage Offset voltage between both inputs Tmin < Tamb < Tmax 1 ΔVio Vio drift vs. temperature Tmin < Tamb < Tmax 0.9 Non inverting input bias current DC current necessary to bias the input + Tamb 12 Iib+ Tmin < Tamb < Tmax 13 Inverting input bias current DC current necessary to bias the input - Tamb 1 Iib- CMR SVR Supply voltage rejection ratio 20 log (ΔVCC/ΔVio) ΔVCC=+3.5V to +5V s ( t c Positive supply current DC consumption with no input signal ICC u d o 56 P e t e l o )- ) s ( t 35 20 2.5 ΔVic = ±1V Tmin < Tamb < Tmax μV/°C uc d o r Tmin < Tamb < Tmax Common mode rejection ratio 20 log (ΔVic/ΔVio) Power supply rejection ratio 20 log (ΔVCC/ΔVout) PSR mV 68 μA μA 60 dB 58 81 dB Tmin < Tamb < Tmax s b O 78 AV = +1, ΔVCC=±100mV at 1kHz 51 Tmin < Tamb < Tmax 48 No load 4.1 dB 4.9 mA Dynamic performance and output characteristics Pr Transimpedance Output voltage/input current gain in open loop of a CFA. For a VFA, the analog of this feature is the open loop gain (AVD) ΔVout = ±1V, RL = 100Ω -3dB bandwidth Frequency where the gain is 3dB below the DC gain AV Note: Gain bandwidth product criterion is not applicable for current-feedback-amplifiers Small signal Vout=20mVpp AV = +1, RL = 100Ω AV = +2, RL = 100Ω AV = +10, RL = 100Ω AV = -2, RL = 100Ω Gain flatness @ 0.1dB Band of frequency where the gain variation does not exceed 0.1dB Small signal Vout=100mVp AV = +1, RL = 100Ω 65 SR Slew rate Maximum output speed of sweep in large signal Vout = 2Vpp, AV = +2, RL = 100Ω 940 V/μs 1.56 V VOH High level output voltage e t e l ROL o s b O Bw 4/22 170 Tmin < Tamb < Tmax RL = 100Ω Tmin < Tamb < Tmax 250 1.44 270 kΩ 250 kΩ 550 390 125 370 MHz 1.49 TSH350 Electrical characteristics Table 3. Electrical characteristics for VCC = ±2.5V, Tamb = 25°C (unless otherwise specified) Symbol VOL Parameter Test conditions Low level output voltage Min. Typ. Max. RL = 100Ω -1.53 -1.44 Tmin < Tamb < Tmax -1.49 Output to GND Isink Short-circuit output current coming in the opTmin < Tamb < Tmax amp (see Figure 9) 135 Isource Output current coming out from the op-amp (see Figure 10) -140 Unit V 205 195 mA Iout Output to GND Tmin < Tamb < Tmax -210 -185 ) s ( ct Noise and distortion eN Equivalent input noise voltage See Section 5: Noise measurements F = 100kHz Equivalent input noise current (+) See Section 5: Noise measurements F = 100kHz Equivalent input noise current (-) See Section 5: Noise measurements F = 100kHz 1.5 u d o iN SFDR l o s ) (s b O 20 pA/√Hz 13 pA/√Hz -66 -57 -46 -42 dBc Closed-loop gain and feedback components VCC (V) t c u Gain Rfb (Ω) -3dB Bw (MHz) 0.1dB Bw (MHz) +10 300 125 22 -10 300 120 20 +2 300 390 110 -2 300 370 70 +1 820 550 65 -1 300 350 120 od e t e ol ±2.5 s b O ete Pr AV = +1, Vout = 1Vpp Spurious free dynamic range F = 10MHz The highest harmonic of the output spectrum F = 20MHz F = 50MHz when injecting a filtered sine wave F = 100MHz Table 4. nV/√Hz Pr 5/22 Electrical characteristics Frequency response, positive gain Figure 2. 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 Small Signal -6 Vcc=5V -8 Load=100Ω -10 1M Gain=+10 Gain=+4 Gain (dB) Gain (dB) Figure 1. TSH350 Gain=+2 Gain=+1 10M 100M 1G Frequency response, negative gain 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 Small Signal -6 Vcc=5V -8 Load=100Ω -10 1M Gain=-10 Gain=-4 Gain=-2 Gain=-1 10M Frequency (Hz) Figure 3. Compensation, gain=+4 Vin Vout )- - 4pF 300R 100R Gain=+4, Vcc=5V, Small Signal du 10M Frequency (Hz) Figure 5. o r P e t e ol 5,9 5,8 Figure 6. 300R 100R 10M 100M 1G Step response vs. capacitor load C-Load=1pF R-iso=22ohms 6 2 Output step (Volt) 4 Gain (dB) 8k2 2pF 3 s b O C-Load=10pF R-iso=39ohms 2 0 C-Load=22pF R-iso=27ohms Vin + - Vout R-iso -4 300R 300R C-Load=10pF R-iso=39ohms C-Load=22pF R-iso=27ohms 1 Vin + - 300R 300R 0 1k C-Load Vout R-iso 1k C-Load Gain=+2, Vcc=5V, Small Signal Gain=+2, Vcc=5V, Small Signal 10M 100M Frequency (Hz) 6/22 - Frequency (Hz) C-Load=1pF R-iso=22ohms 8 -10 1M Vout + Gain=+2, Vcc=5V, Small Signal 5,6 1M 10 -8 Vin 5,7 100M Frequency response vs. capacitor load 6,0 s b O s ( t c 11,7 11,6 1M Gain Flatness (dB) Gain Flatness (dB) 11,9 -6 o r P e t e ol 6,1 12,0 -2 Compensation, gain=+2 6,2 + 1G c u d Figure 4. 12,1 11,8 ) s ( t 100M Frequency (Hz) 1G -1 0,0s 2,0ns 4,0ns 6,0ns 8,0ns 10,0ns 12,0ns 14,0ns 16,0ns 18,0ns 20,0ns Time (ns) TSH350 Electrical characteristics Figure 7. Slew rate Figure 8. Output amplitude vs. load 4,0 Max. Output Amplitude (Vp-p) Output Response (V) 2,0 1,5 1,0 0,5 Gain=+2 Vcc=5V Load=100 Ω 0,0 -2ns -1ns 0s 1ns 2ns 3,5 3,0 2,5 Gain=+2 Vcc=5V Load=100Ω 2,0 3ns 10 100 Time (ns) Figure 9. Isink Figure 10. Isource 300 0 +2.5V e t e ol V OL without load + -50 -1V Isink _ Isink (mA) 200 V - 2.5V RG Amplifier in open loop without load 150 )- 100 t(s 50 0 -2,0 -1,5 -1,0 uc d o r V (V) -0,5 t e l o o r P +2.5V V OH without load + +1V -200 -300 0,0 Isource _ V RG 0,5 1,0 Amplifier in open loop without load 1,5 2,0 Figure 12. Input voltage noise vs. frequency 4.0 3.5 Pos. Current Noise 50 en (nV/sqrt(Hz)) in (pA/sqrt(Hz)) c u d -250 60 Neg. Current Noise 40 30 20 10 1k 100k V (V) P e s b O -150 ) s ( t 10k - 2.5V 0,0 Figure 11. Input current noise vs. frequency 70 -100 s b O Isource (mA) 250 1k Load (ohms) 3.0 2.5 2.0 1.5 10k 100k Frequency (Hz) 1M 10M 1.0 1k 10k 100k 1M 10M Frequency (Hz) 7/22 Electrical characteristics TSH350 Figure 13. Quiescent current vs. VCC Figure 14. Distortion vs. output amplitude 0 5 -5 4 Icc(+) -10 -15 3 -20 HD2 & HD3 (dBc) Icc (mA) 2 1 Gain=+2 Vcc=5V Input to ground, no load 0 -1 -2 -25 -30 HD2 -35 -40 -45 -50 -55 -60 -3 Gain=+2 Vcc=5V F=30MHz Load=100Ω HD3 -65 -70 -4 Icc(-) -5 1,25 -75 1,75 2,00 2,25 0 2,50 1 +/-Vcc (V) Figure 16. Noise figure 40 -20 -25 e t e ol 35 -30 -35 30 -40 -45 HD2 -60 -65 ) (s -70 -75 HD3 -80 -85 ct -90 -95 du -100 0 1 2 4 c u d o r P 15 10 Gain=+2 Vcc=5V F=10MHz Load=100Ω 3 20 5 Gain=? Vcc=5V 0 4 1 10 100 Output Amplitude (Vp-p) 1k 10k 100k Rsource (ohms) o r P Figure 17. Distortion vs. output amplitude e t e ol 3 s b O 25 -50 NF (dB) HD2 & HD3 (dBc) 2 Output Amplitude (Vp-p) Figure 15. Distortion vs. output amplitude -55 ) s ( t -80 1,50 Figure 18. Output amplitude vs. frequency -20 5 -25 -30 bs -35 4 HD2 -45 Vout max. (Vp-p) O HD2 & HD3 (dBc) -40 -50 -55 -60 -65 HD3 -70 -75 -80 Gain=+2 Vcc=5V F=20MHz Load=100Ω -85 -90 -95 1 2 Output Amplitude (Vp-p) 8/22 3 2 1 Gain=+2 Vcc=5V Load=100Ω -100 0 3 4 0 1M 10M 100M Frequency (Hz) 1G TSH350 Electrical characteristics Figure 19. Reverse isolation vs. frequency Figure 20. SVR vs. temperature 0 90 85 -20 -40 SVR (dB) Isolation (dB) 80 -60 75 70 65 60 -80 Small Signal Vcc=5V Load=100Ω -100 1M 55 Gain=+1 Vcc=5V Load=100Ω 100M 1G -40 -20 0 Frequency (Hz) 20 e t e ol 500 320 450 400 350 ) (s 300 0 20 ct du 40 60 Temperature (°C) 80 100 280 120 80 100 120 80 100 120 o r P 260 240 220 Open Loop Vcc=5V 200 -40 120 -20 0 20 40 60 Temperature (°C) o r P Figure 23. CMR vs. temperature e t e ol 100 s b O ROL (MΩ ) Bw (MHz) 300 -20 80 c u d 340 200 60 Figure 22. ROL vs. temperature 550 Gain=+1 250 Vcc=5V Load=100 Ω 40 Temperature (°C) Figure 21. Bandwidth vs. temperature -40 ) s ( t 50 10M Figure 24. Ibias vs. temperature 70 14 68 bs 12 66 8 62 IBIAS (μA) CMR (dB) O Ib(+) 10 64 60 58 6 4 Ib(-) 2 56 0 54 52 Gain=+1 Vcc=5V Load=100Ω -2 -4 Gain=+1 Vcc=5V Load=100Ω 50 -40 -20 0 20 40 60 Temperature (°C) 80 100 120 -40 -20 0 20 40 60 Temperature (°C) 9/22 Electrical characteristics TSH350 Figure 25. Vio vs. temperature Figure 26. ICC vs. temperature 6 1000 4 Icc(+) 800 0 600 ICC (mA) VIO (micro V) 2 400 -2 Icc(-) -4 -6 200 Gain=+1 Vcc=5V -8 no Load In+/In- to GND Open Loop Vcc=5V Load=100Ω -40 -20 0 20 40 60 80 100 -40 120 -20 0 Temperature (°C) 20 e t e ol 200 VOH bs Iout (mA) VOH & OL (V) 0 VOL -2 ) s ( t -3 Gain=+1 Vcc=5V Load=100Ω -20 0 c u d 20 40 Temperature (°C) e t e ol s b O 10/22 100 120 100 120 o r P Isource 100 -5 -40 80 c u d 300 -1 60 Figure 28. Iout vs. temperature 2 1 40 Temperature (°C) Figure 27. VOH and VOL vs. temperature -4 ) s ( t -10 0 o r P 60 80 -O 0 -100 Isink -200 -300 -400 Output: short-circuit Gain=+1 Vcc=5V -40 -20 0 20 40 60 Temperature (°C) 80 TSH350 3 Evaluation boards Evaluation boards An evaluation board kit optimized for high-speed operational amplifiers is available (order code: KITHSEVAL/STDL). As well as a CD-ROM containing datasheets, articles, application notes and a user manual, the kit includes the following evaluation boards: ● SOT23_SINGLE_HF BOARD Board for the evaluation of a single high-speed op-amp in SOT23-5 package. ● SO8_SINGLE_HF Board for the evaluation of a single high-speed op-amp in SO-8 package. ● SO8_DUAL_HF ) s ( ct Board for the evaluation of a dual high-speed op-amp in SO-8 package. ● SO8_S_MULTI Board for the evaluation of a single high-speed op-amp in SO-8 package in inverting and non-inverting configuration, dual and single supply. ● u d o r P e SO14_TRIPLE Board for the evaluation of a triple high-speed op-amp in SO-14 package with video application considerations. t e l o Board material: ● 2 layers ● FR4 (ε r=4.6) ● epoxy 1.6mm ● copper thickness: 35µm ) (s s b O t c u Figure 29. Evaluation kit for high-speed op-amps d o r P e t e l o s b O 11/22 Power supply considerations 4 TSH350 Power supply considerations Correct power supply bypassing is very important for optimizing performance in highfrequency ranges. Bypass capacitors should be placed as close as possible to the IC pins to improve high-frequency bypassing. A capacitor greater than 1μF is necessary to minimize the distortion. For better quality bypassing, a capacitor of 10nF can be added which should also be placed as close as possible to the IC pins. Bypass capacitors must be incorporated for both the negative and the positive supply. Note: On the SO8_SINGLE_HF board, these capacitors are C6, C7, C8, C9. ) s ( ct Figure 30. Circuit for power supply bypassing +VCC u d o 10µF + r P e 10nF t e l o + s b O - ) (s t c u d o r 10nF 10µF + -VCC P e Single power supply t e l o s b O In the event that a single supply system is used, biasing is necessary to obtain a positive output dynamic range between 0V and +VCC supply rails. Considering the values of VOH and VOL, the amplifier will provide an output swing from +0.9V to +4.1V on a 100Ω load. The amplifier must be biased with a mid-supply (nominally +VCC/2), in order to maintain the DC component of the signal at this value. Several options are possible to provide this bias supply, such as a virtual ground using an operational amplifier or a two-resistance divider (which is the cheapest solution). A high resistance value is required to limit the current consumption. On the other hand, the current must be high enough to bias the non-inverting input of the amplifier. If we consider this bias current (35μA maximum) as 1% of the current through the resistance divider, to keep a stable mid-supply, two resistances of 750Ω can be used. The input provides a high-pass filter with a break frequency below 10Hz which is necessary to remove the original 0 volt DC component of the input signal, and to fix it at +VCC/2. Figure 31 illustrates a 5V single power supply configuration for the SO8_S_MULTI evaluation board (see Evaluation boards on page 11). 12/22 TSH350 Power supply considerations A capacitor CG is added in the gain network to ensure a unity gain in low frequency to keep the right DC component at the output. CG contributes to a high-pass filter with Rfb//RG and its value is calculated with a consideration of the cut off frequency of this low-pass filter. Figure 31. Circuit for +5V single supply (using evaluation board SO8_S_MULTI) +5V 10µF + IN +5V Rin 1k 100µF ) s ( ct _ 100 R1 750 Rfb + ) (s u d o r P e RG 10nF + 1µF R2 750 OUT t e l o CG s b O t c u d o r P e t e l o s b O 13/22 Noise measurements 5 TSH350 Noise measurements The noise model is shown in Figure 32: ● eN is the input voltage noise of the amplifier ● iNn is the negative input current noise of the amplifier ● iNp is the positive input current noise of the amplifier Figure 32. Noise model ) s ( ct + iN+ R3 HP3577 Input noise: 8nV/√Hz _ N3 r P e eN iN- N2 R1 N1 ) (s u d o output t e l o R2 s b O t c u The thermal noise of a resistance R is d o r 4kTR Δ F P e t e l o where ΔF is the specified bandwidth. s b O On a 1Hz bandwidth the thermal noise is reduced to: 4kTR where k is the Boltzmann's constant, equal to 1,374.10-23J/°K. T is the temperature (°K). The output noise eNo is calculated using the Superposition Theorem. However, eNo is not the simple sum of all noise sources, but rather the square root of the sum of the square of each noise source, as shown in Equation 1: Equation 1 eNo = 14/22 2 2 2 2 2 V1 + V2 + V3 + V4 + V5 + V6 2 TSH350 Noise measurements Equation 2 2 2 2 2 2 2 2 2 2 R2 R2- 2 × 4kTR3 eNo = eN × g + iNn × R2 + iNp × R3 × g + -------- × 4kTR1 + 4kTR2 + 1 + ------R1 R1 The input noise of the instrumentation must be extracted from the measured noise value. The real output noise value of the driver is: Equation 3 eNo = 2 ( Measured ) – ( instrumentation ) 2 ) s ( ct The input noise is called equivalent input noise because it is not directly measured but is evaluated from the measurement of the output divided by the closed loop gain (eNo/g). u d o After simplification of the fourth and the fifth term of Equation 2 we obtain: r P e Equation 4 2 2 2 2 2 2 2 2 R2- 2 × 4kTR3 eNo = eN × g + iNn × R2 + iNp × R3 × g + g × 4kTR2 + 1 + ------R1 t e l o s b O Measurement of the input voltage noise eN If we assume a short-circuit on the non-inverting input (R3=0), from Equation 4 we can derive: ) (s Equation 5 t c u 2 2 2 2 eN × g + iNn × R2 + g × 4kTR2 d o r eNo = P e In order to easily extract the value of eN, the resistance R2 will be chosen to be as low as possible. In the other hand, the gain must be large enough: t e l o s b O R3=0, gain: g=100 Measurement of the negative input current noise iNn To measure the negative input current noise iNn, we set R3=0 and use Equation 5. This time, the gain must be lower in order to decrease the thermal noise contribution: R3=0, gain: g=10 Measurement of the positive input current noise iNp To extract iNp from Equation 3, a resistance R3 is connected to the non-inverting input. The value of R3 must be chosen in order to keep its thermal noise contribution as low as possible against the iNp contribution: R3=100W, gain: g=10 15/22 Intermodulation distortion product 6 TSH350 Intermodulation distortion product The non-ideal output of the amplifier can be described by the following series: V out = C 0 + C 1 V in + C 2 V 2 in + …+ Cn V n in where the input is Vin=Asinωt, C0 is the DC component, C1(Vin) is the fundamental and Cn is the amplitude of the harmonics of the output signal Vout. A one-frequency (one-tone) input signal contributes to harmonic distortion. A two-tone input signal contributes to harmonic distortion and to the intermodulation product. ) s ( ct The study of the intermodulation and distortion for a two-tone input signal is the first step in characterizing the driving capability of multi-tone input signals. u d o In this case: r P e V in = A sin ω1 t + A sin ω2 t t e l o then: bs 2 V out = C 0 + C 1 ( A sin ω1 t + A sin ω2 t ) + C 2 ( A sin ω1 t + A sin ω2 t ) …+ C n ( A sin ω1 t + A sin ω2 t ) n O ) From this expression, we can extract the distortion terms, and the intermodulation terms from a single sine wave: s ( t c ● second order intermodulation terms IM2 by the frequencies (ω1-ω2) and (ω1+ω2) with an amplitude of C2A2 ● third order intermodulation terms IM3 by the frequencies (2ω1-ω2), (2ω1+ω2), (−ω1+2ω2) and (ω1+2ω2) with an amplitude of (3/4)C3A3 u d o r P e The intermodulation product of the driver is measured by using the driver as a mixer in a summing amplifier configuration (see Figure 33). In this way, the non-linearity problem of an external mixing device is avoided. t e l o bs O Figure 33. Inverting summing amplifier (using evaluation board SO8_S_MULTI) Vin1 R1 Vin2 R2 Rfb _ Vout + R 16/22 100 TSH350 7 Inverting amplifier biasing Inverting amplifier biasing A resistance is necessary to achieve good input biasing, such as resistance R shown in Figure 34. The magnitude of this resistance is calculated by assuming the negative and positive input bias current. The aim is to compensate for the offset bias current, which could affect the input offset voltage and the output DC component. Assuming Iib-, Iib+, Rin, Rfb and a zero volt output, the resistance R is: R in × R fb R = ----------------------R in + R fb ) s ( ct Figure 34. Compensation of the input bias current Rfb Rin Iib- _ s b O + Iib+ ) (s t c u r P e t e l o VCC+ VCC- u d o Output Load R d o r P e t e l o s b O 17/22 Active filtering 8 TSH350 Active filtering Figure 35. Low-pass active filtering, Sallen-Key C1 R2 R1 + IN OUT C2 _ 100 ) s ( ct Rfb 910 RG u d o r P e From the resistors Rfb and RG we can directly calculate the gain of the filter in a classic noninverting amplification configuration: t e l o R fb A V = g = 1 + -------Rg s b O We assume the following expression as the response of the system: ) (s t c u Vout jω g T jω = ---------------- = ---------------------------------------Vin jω j----ω- ( j ω) 2 1 + 2 ζ + -----------ωc ω 2 c The cut-off frequency is not gain-dependent and so becomes: d o r P e t e l o 1 ωc = -----------------------------------R1R2C1C2 The damping factor is calculated by the following expression: s b O 1 ζ = --- ωc ( C 1 R 1 + C 1 R 2 + C 2 R1 – C 1 R 1 g ) 2 The higher the gain, the more sensitive the damping factor is. When the gain is higher than 1, it is preferable to use some very stable resistor and capacitor values. In the case of R1=R2=R: R fb 2C 2 – C 1 -------Rg ζ = -------------------------------2 C1 C2 Due to a limited selection of values of capacitors in comparison with resistors, we can set C1=C2=C, so that: R fb 2R 2 – R 1 -------Rg ζ = -------------------------------2 R1 R2 18/22 TSH350 9 Package information Package information Figure 36. SOT23-5 package mechanical data Dimensions Ref. Millimeters Min. Typ. Mils Max. Min. Typ. Max. A 0.90 1.45 35.4 57.1 A1 0.00 0.15 0.00 5.9 A2 0.90 1.30 35.4 b 0.35 0.50 13.7 C 0.09 0.20 3.5 D 2.80 3.00 110.2 E 2.60 3.00 102.3 E1 1.50 1.75 e t e ol e 0.95 e1 1.9 L 0.35 s b O 0.55 ) (s 59.0 13.7 ) s ( ct 51.2 19.7 du o r P 7.8 118.1 118.1 68.8 37.4 74.8 21.6 t c u d o r P e t e l o s b O 19/22 Package information TSH350 Figure 37. SO-8 package mechanical data Dimensions Ref. Millimeters Min. Typ. Inches A Max. 0.25 0.069 0.10 A2 1.25 0.004 b 0.28 0.48 0.011 0.019 c 0.17 0.23 0.007 0.010 D 4.80 4.90 5.00 0.189 0.193 H 5.80 6.00 6.20 0.228 0.236 E1 3.80 3.90 4.00 0.150 1.27 h 0.25 0.50 L 0.40 1.27 k 1° s ( t c u d o 0.010 e t e l o s b 8° 0.10 r P e 0.010 0.049 O ) 20/22 Max. A1 ccc s b O Typ. 1.75 e t e l o Min. 0.016 1° u d o ) s ( ct 0.154 Pr 0.197 0.244 0.157 0.050 0.020 0.050 8° 0.004 TSH350 10 Ordering information Ordering information Table 5. Order codes Temperature range Part number TSH350ILT TSH350ID -40°C to +85°C TSH350IDT 11 Package Packing Marking SOT23-5 Tape & reel K305 SO-8 Tube TSH350I SO-8 Tape & reel TSH350I ) s ( ct Revision history u d o r P e Date Revision Changes 1-Oct-2004 1 First release corresponding to Preliminary Data version of datasheet. 10-Dec-2004 2 Release of mature product datasheet. 21-Jun-2005 3 In Table 1 on page 2, Rthjc thermal resistance junction to ambient replaced by thermal resistance junction to case. 8-Jun-2007 4 Format update. t e l o ) (s s b O t c u d o r P e t e l o s b O 21/22 TSH350 ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. r P e All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. t e l o No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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