VN610SPTR-E

VN610SP-E SINGLE CHANNEL HIGH SIDE DRIVER Table 1. General Features Type VN610SP-E RDS(on) 10 mΩ Figure 1. Package Iout 45 A VCC 36 V s O UTPUT s CURRENT: 45 A CMOS COMPATIBLE INPUT s PROPORTIONAL LOAD CURRENT SENSE s UNDERVOLTAGE AND OVERVOLTAGEn SHUT-DOWN s OVERVOLTAGE CLAMP THERMAL SHUT DOWN s CURRENT LIMITATION s VERY LOW STAND-BY POWER DISSIPATION s PROTECTION AGAINST: n LOSS OF GROUND AND LOSS OF VCC s REVERSE BATTERY PROTECTION (*) s IN COMPLIANCE WITH THE 2002/95/EC EUROPEAN DIRECTIVE s 10 1 PowerSO-10 ™ DESCRIPTION The VN610SP-E is a monolithic device made using STMicroelectronics VIPower M0-3 technology. It is intended for driving resistive or inductive loads with one side connected to ground. Active V CC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). This device integrates an analog current sense which delivers a current proportional to the load current (according to a known ratio). Active current limitation combined with thermal shut-down and automatic restart protect the device against overload. Device automatically turns off in case of ground pin disconnection. Table 2. Order Codes Package PowerSO-10™ Note: (*) See application schematic at page 9 Tube VN610SP-E Tape and Reel VN610SPTR-E Rev. 1 October 2004 1/18 VN610SP-E Figure 2. Block Diagram VCC VCC CLAMP OVERVOLTAGE UNDERVOLTAGE PwCLAMP DRIVER OUTPUT ILIM VDSLIM IOUT K CURRENT SENSE GND LOGIC INPUT OVERTEMP. Table 3. Absolute Maximum Ratings Symbol VCC Parameter Value Unit DC supply voltage Reverse DC supply voltage DC reverse ground pin current DC output current Reverse DC output current DC input current Current sense maximum voltage Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF) 41 -0.3 -200 Internally limited -50 +/- 10 -3 +15 V V mA A A mA V V -VCC - IGND IOUT - IOUT IIN VCSENSE VESD - INPUT - CURRENT SENSE - OUTPUT - VCC Maximum Switching Energy 4000 2000 5000 5000 V V V V EMAX Ptot Tj Tc TSTG (L=0.05mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=75A) Power dissipation at TC