VNP5N07-E

VNP5N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNP5N07 ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ V clamp R DS(on) I lim 70 V 0.2 Ω 5A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET STANDARD TO-220 PACKAGE DESCRIPTION The VNP5N07 is a monolithic device made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built in thermal shut-down, linear current limi- 3 1 2 TO-220 tation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. BLOCK DIAGRAM March 2004 1/11 VNP5N07 ABSOLUTE MAXIMUM RATING Symbol Parameter Value Unit Internally Clamped V Input Voltage 18 V ID Drain Current Internally Limited A IR Reverse DC Output Current -7 A 2000 V V DS Drain-source Voltage (V in = 0) V in V esd Ptot Tj Tc T stg Electrostatic Discharge (C= 100 pF, R=1.5 KΩ) o Total Dissipation at T c = 25 C 31 Operating Junction Temperature Case Operating Temperature W Internally Limited o C Internally Limited o C -55 to 150 o C Storage Temperature THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 4 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit 70 80 V V CLAMP Drain-source Clamp Voltage I D = 200 mA V in = 0 60 V CLTH Drain-source Clamp Threshold Voltage I D = 2 mA V in = 0 55 V INCL Input-Source Reverse Clamp Voltage I in = -1 mA I DSS Zero Input Voltage Drain Current (V in = 0) V DS = 13 V V DS = 25 V V in = 0 V in = 0 II SS Supply Current from Input Pin V DS = 0 V Vin = 10 V V -1 -0.3 V 50 200 µA µA 250 500 µA Typ. Max. Unit 3 V 0.200 0.280 Ω Ω Max. Unit ON (∗) Symbol Parameter Test Conditions Min. ID + I in = 1 mA 0.8 V IS(th) Input Threshold Voltage V DS = Vin R DS(on) Static Drain-source On Resistance V in = 10 V I D = 2.5 A V in = 5 V I D = 2.5 A DYNAMIC Symbol g fs (∗) C oss 2/11 Parameter Test Conditions Forward Transconductance V DS = 13 V I D = 2.5 A Output Capacitance V DS = 13 V f = 1 MHz V in = 0 Min. Typ. 3 4 200 S 300 pF VNP5N07 ELECTRICAL CHARACTERISTICS (continued) SWITCHING (∗∗) Symbol Parameter Test Conditions t d(on) tr t d(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time V DD = 15 V V gen = 10 V (see figure 3) I d = 2.5 A R gen = 10 Ω t d(on) tr t d(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time V DD = 15 V V gen = 10 V (see figure 3) I d = 2.5 A R gen = 1000 Ω Turn-on Current Slope V DD = 15 V V in = 10 V I D = 2.5 A R gen = 10 Ω Total Input Charge V DD = 12 V (di/dt) on Qi I D = 2.5 A Min. V in = 10 V Typ. Max. Unit 50 60 150 40 100 100 300 80 ns ns ns ns 150 400 3900 1100 250 600 5000 1600 ns ns ns ns 35 A/µs 18 nC SOURCE DRAIN DIODE Symbol Parameter Test Conditions V SD (∗) Forward On Voltage I SD = 2.5 A t rr (∗∗) Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 2.5 A di/dt = 100 A/µs V DD = 30 V T j = 25 o C (see test circuit, figure 5) Q rr (∗∗) I RRM (∗∗) Min. Typ. V IN =0 Max. Unit 1.6 V 150 ns 0.3 µC 5.7 A PROTECTION Symbol Parameter Test Conditions Min. Typ. Max. Unit V DS = 13 V V DS = 13 V 3.5 3.5 5 5 7 7 A A 15 40 20 60 µs Drain Current Limit V in = 10 V V in = 5 V t dlim (∗∗) Step Response Current Limit V in = 10 V V in = 5 V T jsh (∗∗) Overtemperature Shutdown 150 o C T jrs (∗∗) Overtemperature Reset 135 o C I gf (∗∗) Fault Sink Current V in = 10 V V in = 5 V E as (∗∗) Single Pulse Avalanche Energy starting T j = 25 o C V DD = 20 V V in = 10 V R gen = 1 KΩ L = 30 mH I lim V DS = 13 V V DS = 13 V 50 20 0.2 mA J (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (∗∗) Parametes guaranteed by design/characterization 3/11 VNP5N07 PROTECTION FEATURES During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user’s standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry. The device integrates: - OVERVOLTAGE CLAMP PROTECTION: internally set at 70V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. - LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh. 4/11 - OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150oC. The device is automatically restarted when the chip temperature falls below 135oC. - STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin. The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 Ω. The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)). VNP5N07 Thermal Impedance Derating Curve Output Characteristics Transconductance Static Drain-Source On Resistance vs Input Voltage Static Drain-Source On Resistance 5/11 VNP5N07 Static Drain-Source On Resistance Input Charge vs Input Voltage Capacitance Variations Normalized Input Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Normalized On Resistance vs Temperature 6/11 VNP5N07 Turn-on Current Slope Turn-on Current Slope Turn-off Drain-Source Voltage Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load Switching Time Resistive Load 7/11 VNP5N07 Switching Time Resistive Load Current Limit vs Junction Temperature Step Response Current Limit Source Drain Diode Forward Characteristics 8/11 VNP5N07 Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Input Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 6: Waveforms 9/11 VNP5N07 TO-220 MECHANICAL DATA mm. DIM. MIN. MAX. A 4.40 4.60 b 0.61 0.88 b1 1.15 1.70 c 0.49 0.70 D 15.25 15.75 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Package Weight 10/11 TYP 1.9Gr. (Typ.) VNP5N07 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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