VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series
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Vishay Semiconductors
Power Silicon Rectifier Diodes,
(Stud Version), 35 A, 40 A, 60 A
DESCRIPTION/FEATURES
• Low leakage current series
• Good surge current capability up to 1000 A
• Can be supplied to meet stringent military,
aerospace, and other high reliability
requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DO-203AB (DO-5)
PRODUCT SUMMARY
IF(AV)
35 A, 40 A, 60 A
Package
DO-203AB (DO-5)
Circuit configuration
Single diode
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IF(AV)
IFSM
I2t
I2t
VRRM
TEST CONDITIONS
TC
50 Hz
60 Hz
50 Hz
60 Hz
Range
TJ
1N1183
35 (1)
140 (1)
480
500 (1)
1140
1040
16 100
50 to 600 (1)
1N3765
35 (1)
140 (1)
380
400 (1)
730
670
10 300
700 to 1000 (1)
1N1183A
40 (1)
150 (1)
765
800 (1)
2900
2650
41 000
50 to 600 (1)
1N2128A
60 (1)
140 (1)
860
900 (1)
3700
3400
52 500
50 to 600 (1)
UNITS
A
°C
-65 to 200
-65 to 200
-65 to 200
-65 to 200
°C
A
A2s
A2s
V
Note
(1) JEDEC® registered values
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-1N1183
VS-1N1184
VS-1N1185
VS-1N1186
VS-1N1187
VS-1N1188
VS-1N1189
VS-1N1190
VS-1N3765
VS-1N3766
VS-1N3767
VS-1N3768
VS-1N1183A
VS-1N1184A
VS-1N1185A
VS-1N1186A
VS-1N1187A
VS-1N1188A
VS-1N1189A
VS-1N1190A
VS-1N2128A
VS-1N2129A
VS-1N2130A
VS-1N2131A
VS-1N2133A
VS-1N2135A
VS-1N2137A
VS-1N2138A
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
(TJ = - 65 °C TO 200 °C (2))
V
VRM, MAXIMUM DIRECT
REVERSE VOLTAGE
(TJ = - 65 °C TO 200 °C (2))
V
50 (1)
100 (1)
150 (1)
200 (1)
300 (1)
400 (1)
500 (1)
600 (1)
700 (1)
800 (1)
900 (1)
1000 (1)
50 (1)
100 (1)
150 (1)
200 (1)
300 (1)
400 (1)
500 (1)
600 (1)
700 (1)
800 (1)
900 (1)
1000 (1)
Notes
• Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g., 1N1188R, 1N3766R, 1N1186RA, 1N2135RA
(1) JEDEC® registered values
(2) For 1N1183 Series and 1N3765 Series T = - 65 °C to 190 °C
C
Revision: 18-May-15
Document Number: 93492
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
IF(AV)
TEST CONDITIONS
1-phase operation,
180° sinusoidal conduction
Half cycle 50 Hz
sine wave or 6 ms
rectangular pulse
Maximum peak one cycle
non-repetitive surge current
IFSM
Half cycle 60 Hz
sine wave or 5 ms
rectangular pulse
Half cycle 50 Hz
sine wave or 6 ms
rectangular pulse
Half cycle 60 Hz
sine wave or 5 ms
rectangular pulse
t = 10 ms
Maximum I2t for fusing
t = 8.3 ms
I2t
t = 10 ms
Maximum I2t for individual
device fusing
I2t
Maximum
for individual
device fusing
Maximum peak forward voltage
at maximum forward current (IFM)
Maximum average
reverse current
t = 8.3 ms
I2t (2)
VFM
Following any
rated load
condition and
with rated
VRRM applied
1N1183
1N3765 1N1183A 1N2128A UNITS
35 (1)
35 (1)
40 (1)
60 (1)
A
140 (1)
140 (1)
150 (1)
140 (1)
°C
480
380
765
860
500 (1)
400 (1)
800 (1)
900 (1)
A
Following any
rated load
condition and
with ½ VRRM
applied following
surge = 0
With rated VRRM
applied following
surge, initial
TJ = TJ maximum
With VRRM = 0
following surge,
initial
TJ = TJ maximum
t = 0.1 to 10 ms,
VRRM = 0 following surge
TJ = 25 °C
570
455
910
1000
595
475
950
1050
1140
730
2900
3700
1040
670
2650
3400
A2s
1610
1030
4150
5250
1470
940
3750
4750
16 100
10 300
41 500
52 500
A2s
1.7 (1)
1.8 (1)
1.3 (1)
1.3 (1)
V
110
110
A
126
188
(1)
VRRM = 700
-
5.0
-
-
VRRM = 800
-
4.0 (1)
-
-
-
3.0 (1)
-
-
-
2.0 (1)
-
-
10 (1)
-
2.5 (1)
10 (1)
VRRM = 900
IR(AV)
Maximum rated IF(AV) and TC
VRRM = 1000
Maximum rated IF(AV), VRRM and TC
mA
Notes
(1) JEDEC® registered values
(2) I2t for time t = I2t x t
x
x
Revision: 18-May-15
Document Number: 93492
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating
case temperature range
TEST CONDITIONS
1N1183 1N3765 1N1183A 1N2128A UNITS
TC
- 65 to 190 (1)
- 65 to 200
Maximum storage
temperature range
TStg
- 65 to 175 (1)
- 65 to 200
Maximum internal thermal
resistance, junction to case
RthJC
DC operation
Thermal resistance,
case to sink
RthCS
Mounting surface, smooth, flat and greased
°C
1.00 (1)
1.1 (1)
0.65 (1)
°C/W
0.25
Not lubricated thread, tighting on nut (2)
Maximum allowable
mounting torque
(+ 0 %, - 10 %)
Lubricated thread, tighting on nut
3.4 (30)
(2)
2.3 (20)
Not lubricated thread, tighting on hexagon (3)
4.2 (37)
Lubricated thread, tighting on hexagon (3)
3.2 (28)
Approximate weight
JEDEC®
Case style
N·m
(lbf · in)
17
g
0.6
oz.
DO-203AB (DO-5)
70
190
180
Ø
170
Conduction Period
160
150
DC
140
+60 °C +120 °C
+180 °C
130
120
110
Average Forward Power Loss
Over Full Cycle (W)
Maximum Allowable Case Temperature (°C)
Notes
(1) JEDEC registered values®
(2) Recommended for pass-through holes
(3) Recommended for holed threaded heatsinks
+60 °C +120 °C
TJ = 190 °C
60
50
+180 °C
40
DC
30
20
Ø
10
Conduction Period
0
100
0
10
20
30
40
50
60
0
10
20
30
40
50
Average Forward Current Over Full Cycle (A)
Average Forward Current Over Full Cycle (A)
Fig. 1 - Maximum Allowable Case Temperature vs.
Average Forward Current, 1N1183 and 1N3765 Series
Fig. 2 - Typical Low Level Forward Power Loss vs.
Average Forward Current (Sinusoidal Current Waveform),
1N1183 and 1N3765 Series
Revision: 18-May-15
Document Number: 93492
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series
www.vishay.com
100
105
TJ = 140 °C
90
DC
+180 °C
+120 °C
+60 °C
104
10
Average Forward Current
Over Full Cycle (A)
Average Forward Current
Over Full Cycle (A)
Vishay Semiconductors
3
102
Conduction Period
102
10
103
+180 °C
Wave
+120 °C
&
60
50
+180 °C
Wave
Wave
40
30
+60 °C
20
&
Wave
+Conduction Period
Maximum Allowable CaseTemperature (°C)
Fig. 6 - Average Forward Current vs. Maximum Allowable Case
Temperature, 1N1183A Series
100
103
Average Forward Power Loss
Over Full Cycle (W)
IF - Instantaneous Forward Current (A)
DC
0
110 120 130 140 150 160 170 180 190 200
104
Average Forward Power Loss
Over Full Cycle (W)
Fig. 3 - Typical High Level Forward Power Loss vs.
Average Forward Current (Sinusoidal Current Waveform),
1N1183 and 1N3765 Series
TJ = 190 °C
Typical
102
101
TJ = 25 °C
+180 °C
Wave
+180 °C
Wave
90
80
+120 °C
70
+60 °C
&
&
DC
Wave
Wave
60
50
40
TJ = 200 °C
30
20
+Conduction Period
10
0
1
0
1
2
3
4
5
0
6
10
20
30
40
50
60
70
IF - Instantaneous Forward Voltage (V)
Average Forward Current Over Full Cycle (A)
Fig. 4 - Typical Forward Voltage vs. Forward Current,
1N1183 and 1N3765 Series
Fig. 7 - Maximum Low Level Forward Power Loss vs.
Average Forward Current, 1N1183A Series
1.0
At any rated load condition and with
rated VRRM applied following surge
Series
Per Unit Base-A
1N1183
500
1N3765
400
0.9
0.8
0.7
0.6
50 Hz
60 Hz
0.5
0.4
0.3
1
2
4
6 8 10
20
40 60
Number of Equal Amplitude
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N1183 and 1N3765 Series
104
Average Forward Power Loss
Over Full Cycle (W)
Peak Half Sine Wave
Forward Current (Per Unit)
70
10
Ø
10
80
103
+180 °C
Wave
+180 °C
Wave
+120 °C
&
+60 °C
&
DC
Wave
Wave
102
TJ = 200 °C
+Conduction Period
101
10
102
103
Average Forward Current Over Full Cycle (A)
Fig. 8 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 1N1183A Series
Revision: 18-May-15
Document Number: 93492
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series
Vishay Semiconductors
104
103
102
TJ = 25 °C
10
TJ = 200 °C
1
10-1
0
0.5
1
1.5
2
2.5
3
3.5
Instantaneous Forward Voltage (V)
Fig. 9 - Maximum Forward Voltage vs. Forward Current,
1N1183A Series
Maximum Allowable Case Temperature (°C)
Instantaneous Forward Current (A)
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180
Wave
Wave
Wave
Wave
160
140
DC
120
100
+Conduction Period
80
60
0
10
20
30
40
50
60
70
80
90 100
Average Forward Current Over Full Cycle (A)
70
At any rated load condition and with
rated VRRM applied following surge
Series
Per Unit Base-A
1N1183A
800
0.9
0.8
0.7
0.6
60 Hz
0.5
50 Hz
0.4
Average Forward Power Loss
Over Full Cycle (W)
Maximum Peak Half Sine Wave
Forward Current (Per Unit)
+60 °C
&
+120 °C
&
+180 °C
+180 °C
Fig. 12 - Maximum Allowable Case Temperature vs.
Average Forward Current, 1N2128A Series
1.0
60
TJ = 140 °C
50
+60 °C
&
+120 °C
&
+180 °C
+180 °C
40
30
Wave
Wave
Wave
Wave
+Conduction Period
20
DC
10
0
0.3
1
2
4
6 8 10
20
0
40 60
Number of Equal Amplitude
Current Pulses (N)
Fig. 10 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N1183A Series
0.9
0.8
0.7
0.6
60 Hz
0.5
0.4
50 Hz
20
103 +60 °C
&
+90 °C
&
+180 °C
+180 °C
1
2
4
6 8 10
20
40 60
Number of Equal Amplitude
Current Pulses (N)
Fig. 11 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N2128A Series
40
50
105
Wave
Wave
Wave
Wave
TJ = 140 °C
102
+Conduction
Period
104
DC
DC
+180 °C
+180 °C
+120 °C
&
+60 °C
&
10
0.3
30
Fig. 13 - Maximum Low Level Forward Power Loss vs.
Average Forward Current, 1N2128A Series
Average Forward Power Loss
Over Full Cycle (W)
At any rated load condition and with
rated VRRM applied following surge
Series
Per Unit Base-A
1N2128A
900
10
Average Forward Current Over Full Cycle (A)
1.0
Maximum Peak Half Sine Wave
Forward Current (Per Unit)
200
10
102
103
Wave
Wave
Wave
Wave
104
103
Average Forward Current Over Full Cycle (A)
Fig. 14 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 1N2128A Series
Revision: 18-May-15
Document Number: 93492
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series
Instantaneous Forward Current (A)
www.vishay.com
Vishay Semiconductors
104
103
102
TJ = 140 °C
101
TTJJ == 25 °C
°C
1.0
0
1
2
3
4
5
6
7
Instantaneous Forward Voltage (V)
Fig. 15 - Maximum Forward Voltage vs. Forward Current,
1N2128A Series
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95360
Revision: 18-May-15
Document Number: 93492
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Outline Dimensions
Vishay Semiconductors
DO-203AB (DO-5) for
1N1183, 1N3765, 1N1183A, 1N2128A, 1N3208 Series
DIMENSIONS in millimeters (inches)
Ø 14.6 (0.57)
6.1 (0.24)
7.0 (0.28)
Ø 4.10 (0.16)
Ø 3.80 (0.15)
1.03 (0.04)
MAX.
4 (0.16) MIN.
25.4 (1.0) MAX.
10.8 (0.43)
11.4 (0.45)
10.7 (0.42)
11.5 (0.45)
1/4" 28UNF-2A
for metric devices: M6 x 1
1.0 (0.04)
MAX.
Document Number: 95360
Revision: 29-Sep-08
17.40 (0.68) MIN.
Across flats
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000