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20ETF04FP

20ETF04FP

  • 厂商:

    TFUNK(威世)

  • 封装:

    TO220FP

  • 描述:

    Diode Standard 400V 20A Through Hole TO-220AB Full-Pak

  • 数据手册
  • 价格&库存
20ETF04FP 数据手册
20ETF..FP Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 20 A FEATURES/DESCRIPTION The 20ETF..FP soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. Base cathode 2 TO-220 FULL-PAK The fully isolated package (VINS = 2500 VRMS) is UL E78996 approved. 3 Anode 1 Cathode This product series has been designed and qualified for industrial level. PRODUCT SUMMARY VF at 10 A < 1.2 V IFSM 300 A VRRM 200 to 600 V APPLICATIONS • Output rectification and choppers and converters freewheeling in inverters, • Input rectifications where severe restrictions on conducted EMI should be met MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS Sinusoidal waveform VRRM 20 A 200 to 600 V 300 A 1.2 V IFSM VF 10 A, TJ = 25 °C trr 1 A, 100 A/µs 60 ns - 40 to 150 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA 20ETF02FP 200 300 20ETF04FP 400 500 20ETF06FP 600 700 TJ VOLTAGE RATINGS PART NUMBER 5 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2 t Maximum I2√t for fusing I2√t Document Number: 93142 Revision: 12-Jun-08 TEST CONDITIONS VALUES TC = 94 °C, 180° conduction half sine wave 20 10 ms sine pulse, rated VRRM applied 250 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated VRRM applied 316 10 ms sine pulse, no voltage reapplied 442 t = 0.1 to 10 ms, no voltage reapplied 4420 For technical questions, contact: diodes-tech@vishay.com UNITS A A2 s A2√s www.vishay.com 1 20ETF..FP Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 20 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop Forward slope resistance VFM TEST CONDITIONS VALUES 20 A, TJ = 25 °C 1.30 60 A, TJ = 25 °C 1.67 rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TJ = 150 °C TJ = 25 °C V 12.5 mΩ 0.9 V 0.1 VR = Rated VRRM TJ = 150 °C UNITS mA 5.0 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor S TEST CONDITIONS IF at 20 Apk 100 A/µs 25 °C VALUES UNITS 160 ns 10 A 1.25 Typical IFM trr ta tb t dir dt µC Qrr IRM(REC) 0.6 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS TEST CONDITIONS DC operation Marking device www.vishay.com 2 UNITS - 40 to 150 °C 1.5 62 Mounting surface, smooth and greased °C/W 1.5 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque VALUES Case style TO-220 FULL-PAK For technical questions, contact: diodes-tech@vishay.com 20ETF06FP Document Number: 93142 Revision: 12-Jun-08 20ETF..FP Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A 45 150 20ETF.. Series RthJC (DC) = 1.5 K/W 140 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) Vishay High Power Products 130 120 Ø Conduction angle 110 100 90 60° 90° 120° 180° 30° 80 DC 180° 120° 90° 60° 30° 40 35 30 25 20 RMS limit 10 20ETF.. Series TJ = 150 °C 5 0 0 5 15 10 5 0 25 20 Average Forward Current (A) 15 20 25 35 30 Fig. 4 - Forward Power Loss Characteristics 300 150 At any rated load condition and with rated VRRM applied following surge. 20ETF.. Series RthJC (DC) = 1.5 K/W 140 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) 10 Average Forward Current (A) Fig. 1 - Current Rating Characteristics 130 Ø 120 Conduction period 110 30° 100 90° 90 60° 120° 180° 0 5 10 15 20 30 25 250 Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 200 150 100 20ETF.. Series DC 50 80 1 35 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Average Forward Current (A) Fig. 2 - Current Rating Characteristics 550 35 25 180° 120° 90° 60° 30° 20 RMS limit 30 15 Ø 10 Conduction angle 20ETF.. Series TJ = 150 °C 5 5 10 15 20 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Document Number: 93142 Revision: 12-Jun-08 450 25 Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 400 350 300 250 200 150 100 0 0 Maximum non-repetitive surge current versus pulse train duration. 500 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) Ø Conduction period 15 20ETF.. Series 50 0.001 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 20ETF..FP Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A 1000 4.0 100 TJ = 25 °C TJ = 150 °C 10 IFM = 20 A 2.5 2.0 IFM = 10 A 1.5 1.0 IFM = 5 A 20ETF.. Series IFM = 1 A 1 0 1 2 3 5 4 0 200 400 600 800 1000 dI/dt - Rate of Fall of Forward Current (A/µs) Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 0.20 10 20ETF.. Series TJ = 25 °C 0.15 IFM = 30 A IFM = 20 A 0.10 IFM = 10 A 0.05 20ETF.. Series TJ = 150 °C 9 Qrr - Maximum Reverse Recovery Charge (µC) trr - Maximum Reverse Recovery Time (µs) 3.0 0.5 0 IFM = 5 A IFM = 1 A 0 IFM = 30 A 8 7 IFM = 20 A 6 5 4 IFM = 10 A 3 2 IFM = 5 A 1 IFM = 1 A 0 0 200 400 600 800 0 1000 dI/dt - Rate of Fall of Forward Current (A/µs) 200 400 600 800 1000 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C 0.5 70 20ETF.. Series TJ = 150 °C 0.4 IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 0.3 0.2 0.1 20ETF.. Series TJ = 25 °C 60 Irr - Maximum Reverse Recovery Current (A) trr - Maximum Reverse Recovery Time (µs) IFM = 30 A 20ETF.. Series TJ = 25 °C 3.5 Qrr - Maximum Reverse Recovery Charge (µC) Instantaneous Forward Current (A) Vishay High Power Products IFM = 30 A 50 IFM = 20 A 40 IFM = 10 A 30 IFM = 5 A 20 10 0 IFM = 1 A 0 0 200 400 600 800 1000 0 200 400 600 800 1000 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 12 - Recovery Current Characteristics, TJ = 25 °C www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 93142 Revision: 12-Jun-08 20ETF..FP Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A Vishay High Power Products 100 Irr - Maximum Reverse Recovery Current (A) 20ETF.. Series TJ = 150 °C IFM = 30 A 80 IFM = 20 A 60 IFM = 10 A 40 IFM = 5 A 20 IFM = 1 A 0 0 200 400 600 800 1000 dI/dt - Rate of Fall of Forward Current (A/µs) ZthJC - Transient Thermal Impedance (K/W) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C 10 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Steady state value (DC operation) 0.1 Single pulse 20ETF.. Series 0.01 0.0001 Document Number: 93142 Revision: 12-Jun-08 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 20ETF..FP Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A Vishay High Power Products ORDERING INFORMATION TABLE Device code 20 E T F 06 FP - 1 2 3 4 5 6 7 1 - Current rating (20 = 20 A) 2 - Circuit configuration: E = Single diode 3 - Package: T = TO-220AC 4 - Type of silicon: F = Fast soft recovery rectifier 5 - Voltage code x 100 = VRRM 6 - FULL-PAK 7 - 02 = 200 V 04 = 400 V 06 = 600 V None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95005 Part marking information http://www.vishay.com/doc?95009 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 93142 Revision: 12-Jun-08 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below. Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN® are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners. Document Number: 99901 Revision: 12-Mar-07 www.vishay.com 1
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