20ETF..FP Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery
Rectifier Diode, 20 A
FEATURES/DESCRIPTION
The 20ETF..FP soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
Base
cathode
2
TO-220 FULL-PAK
The fully isolated package (VINS = 2500 VRMS) is UL E78996
approved.
3
Anode
1
Cathode
This product series has been designed and qualified for
industrial level.
PRODUCT SUMMARY
VF at 10 A
< 1.2 V
IFSM
300 A
VRRM
200 to 600 V
APPLICATIONS
• Output rectification and
choppers and converters
freewheeling
in
inverters,
• Input rectifications where severe restrictions on conducted
EMI should be met
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
VALUES
UNITS
Sinusoidal waveform
VRRM
20
A
200 to 600
V
300
A
1.2
V
IFSM
VF
10 A, TJ = 25 °C
trr
1 A, 100 A/µs
60
ns
- 40 to 150
°C
VRRM, MAXIMUM PEAK REVERSE
VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
20ETF02FP
200
300
20ETF04FP
400
500
20ETF06FP
600
700
TJ
VOLTAGE RATINGS
PART NUMBER
5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle non-repetitive
surge current
IFSM
Maximum I2t for fusing
I2 t
Maximum I2√t for fusing
I2√t
Document Number: 93142
Revision: 12-Jun-08
TEST CONDITIONS
VALUES
TC = 94 °C, 180° conduction half sine wave
20
10 ms sine pulse, rated VRRM applied
250
10 ms sine pulse, no voltage reapplied
300
10 ms sine pulse, rated VRRM applied
316
10 ms sine pulse, no voltage reapplied
442
t = 0.1 to 10 ms, no voltage reapplied
4420
For technical questions, contact: diodes-tech@vishay.com
UNITS
A
A2 s
A2√s
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20ETF..FP Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery
Rectifier Diode, 20 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
Forward slope resistance
VFM
TEST CONDITIONS
VALUES
20 A, TJ = 25 °C
1.30
60 A, TJ = 25 °C
1.67
rt
Threshold voltage
VF(TO)
Maximum reverse leakage current
IRM
TJ = 150 °C
TJ = 25 °C
V
12.5
mΩ
0.9
V
0.1
VR = Rated VRRM
TJ = 150 °C
UNITS
mA
5.0
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Snap factor
S
TEST CONDITIONS
IF at 20 Apk
100 A/µs
25 °C
VALUES
UNITS
160
ns
10
A
1.25
Typical
IFM
trr
ta
tb
t
dir
dt
µC
Qrr
IRM(REC)
0.6
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
TEST CONDITIONS
DC operation
Marking device
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UNITS
- 40 to 150
°C
1.5
62
Mounting surface, smooth and greased
°C/W
1.5
2
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Approximate weight
Mounting torque
VALUES
Case style TO-220 FULL-PAK
For technical questions, contact: diodes-tech@vishay.com
20ETF06FP
Document Number: 93142
Revision: 12-Jun-08
20ETF..FP Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
45
150
20ETF.. Series
RthJC (DC) = 1.5 K/W
140
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
Vishay High Power Products
130
120
Ø
Conduction angle
110
100
90
60° 90° 120° 180°
30°
80
DC
180°
120°
90°
60°
30°
40
35
30
25
20
RMS limit
10
20ETF.. Series
TJ = 150 °C
5
0
0
5
15
10
5
0
25
20
Average Forward Current (A)
15
20
25
35
30
Fig. 4 - Forward Power Loss Characteristics
300
150
At any rated load condition and with
rated VRRM applied following surge.
20ETF.. Series
RthJC (DC) = 1.5 K/W
140
Peak Half Sine Wave
Forward Current (A)
Maximum Allowable Case
Temperature (°C)
10
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
130
Ø
120
Conduction period
110
30°
100
90°
90
60°
120°
180°
0
5
10
15
20
30
25
250
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
200
150
100
20ETF.. Series
DC
50
80
1
35
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
550
35
25
180°
120°
90°
60°
30°
20
RMS limit
30
15
Ø
10
Conduction angle
20ETF.. Series
TJ = 150 °C
5
5
10
15
20
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Document Number: 93142
Revision: 12-Jun-08
450
25
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
400
350
300
250
200
150
100
0
0
Maximum non-repetitive surge current
versus pulse train duration.
500
Peak Half Sine Wave
Forward Current (A)
Maximum Average Forward
Power Loss (W)
Ø
Conduction period
15
20ETF.. Series
50
0.001
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
For technical questions, contact: diodes-tech@vishay.com
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20ETF..FP Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
1000
4.0
100
TJ = 25 °C
TJ = 150 °C
10
IFM = 20 A
2.5
2.0
IFM = 10 A
1.5
1.0
IFM = 5 A
20ETF.. Series
IFM = 1 A
1
0
1
2
3
5
4
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
0.20
10
20ETF.. Series
TJ = 25 °C
0.15
IFM = 30 A
IFM = 20 A
0.10
IFM = 10 A
0.05
20ETF.. Series
TJ = 150 °C
9
Qrr - Maximum Reverse
Recovery Charge (µC)
trr - Maximum Reverse
Recovery Time (µs)
3.0
0.5
0
IFM = 5 A
IFM = 1 A
0
IFM = 30 A
8
7
IFM = 20 A
6
5
4
IFM = 10 A
3
2
IFM = 5 A
1
IFM = 1 A
0
0
200
400
600
800
0
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
0.5
70
20ETF.. Series
TJ = 150 °C
0.4
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
0.3
0.2
0.1
20ETF.. Series
TJ = 25 °C
60
Irr - Maximum Reverse
Recovery Current (A)
trr - Maximum Reverse
Recovery Time (µs)
IFM = 30 A
20ETF.. Series
TJ = 25 °C
3.5
Qrr - Maximum Reverse
Recovery Charge (µC)
Instantaneous Forward Current (A)
Vishay High Power Products
IFM = 30 A
50
IFM = 20 A
40
IFM = 10 A
30
IFM = 5 A
20
10
0
IFM = 1 A
0
0
200
400
600
800
1000
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 93142
Revision: 12-Jun-08
20ETF..FP Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
Vishay High Power Products
100
Irr - Maximum Reverse
Recovery Current (A)
20ETF.. Series
TJ = 150 °C
IFM = 30 A
80
IFM = 20 A
60
IFM = 10 A
40
IFM = 5 A
20
IFM = 1 A
0
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
ZthJC - Transient Thermal Impedance (K/W)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
10
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Steady state value
(DC operation)
0.1
Single pulse
20ETF.. Series
0.01
0.0001
Document Number: 93142
Revision: 12-Jun-08
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
For technical questions, contact: diodes-tech@vishay.com
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5
20ETF..FP Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
20
E
T
F
06
FP
-
1
2
3
4
5
6
7
1
-
Current rating (20 = 20 A)
2
-
Circuit configuration:
E = Single diode
3
-
Package:
T = TO-220AC
4
-
Type of silicon:
F = Fast soft recovery rectifier
5
-
Voltage code x 100 = VRRM
6
-
FULL-PAK
7
-
02 = 200 V
04 = 400 V
06 = 600 V
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95005
Part marking information
http://www.vishay.com/doc?95009
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 93142
Revision: 12-Jun-08
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
Document Number: 99901
Revision: 12-Mar-07
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