20ETF..S Soft Recovery Series
Vishay High Power Products
Surface Mountable Fast
Soft Recovery Rectifier Diode, 20 A
FEATURES/DESCRIPTION
The 20ETF..S soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
Base
common
cathode
+
2
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
D2PAK (SMD-220)
1
Anode -
3
- Anode
This product series has been designed and qualified for
industrial level.
APPLICATIONS
PRODUCT SUMMARY
VF at 10 A
< 1.2 V
IFSM
300 A
VRRM
200 to 600 V
• Output rectification and
choppers and converters
freewheeling
in
inverters,
• Input rectifications where severe restrictions on conducted
EMI should be met
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
VALUES
UNITS
20
A
VRRM
200 to 600
V
IFSM
300
A
IF(AV)
CHARACTERISTICS
Sinusoidal waveform
VF
10 A, TJ = 25 °C
1.2
V
trr
1 A, 100 A/µs
60
ns
TJ
Range
- 40 to 150
°C
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
20ETF02S
200
300
20ETF04S
400
500
20ETF06S
600
700
VOLTAGE RATINGS
PART NUMBER
5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
I2√t
Document Number: 93143
Revision: 22-Oct-08
TEST CONDITIONS
VALUES
TC = 97 °C, 180° conduction half sine wave
20
10 ms sine pulse, rated VRRM applied
250
10 ms sine pulse, no voltage reapplied
300
10 ms sine pulse, rated VRRM applied
316
10 ms sine pulse, no voltage reapplied
442
t = 0.1 to 10 ms, no voltage reapplied
4420
For technical questions, contact: diodes-tech@vishay.com
UNITS
A
A2s
A2√s
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20ETF..S Soft Recovery Series
Vishay High Power Products
Surface Mountable Fast
Soft Recovery Rectifier Diode, 20 A
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
VFM
TEST CONDITIONS
VALUES
20 A, TJ = 25 °C
1.30
60 A, TJ = 25 °C
1.67
rt
VF(TO)
IRM
TJ = 150 °C
TJ = 25 °C
VR = Rated VRRM
TJ = 150 °C
UNITS
V
12.5
mΩ
0.9
V
0.1
mA
5.0
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Snap factor
S
TEST CONDITIONS
IF at 20 Apk
100 A/µs
25 °C
Typical
VALUES
UNITS
160
ns
10
A
1.25
µC
IFM
trr
ta
tb
t
dir
dt
Qrr
IRM(REC)
0.6
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance
junction to ambient (PCB mount)
Soldering temperature
TEST CONDITIONS
DC operation
VALUES
UNITS
- 40 to 150
°C
0.9
°C/W
RthJA (1)
40
TS
240
Approximate weight
°C
2
g
0.07
oz.
20ETF02S
Marking device
Case style
D2PAK
(SMD-220)
20ETF04S
20ETF06S
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 93143
Revision: 22-Oct-08
20ETF..S Soft Recovery Series
Surface Mountable Fast
Vishay High Power Products
Soft Recovery Rectifier Diode, 20 A
45
20ETF.. Series
RthJC (DC) = 0.9 K/W
140
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
150
130
Ø
120
Conduction angle
110
100
90
60° 90° 120° 180°
30°
80
70
DC
180°
120°
90°
60°
30°
40
35
30
25
20
RMS limit
Ø
15
Conduction period
10
20ETF.. Series
TJ = 150 °C
5
0
0
2
4
6
8
10 12 14 16 18 20 22
5
0
Average Forward Current (A)
25
30
35
Fig. 4 - Forward Power Loss Characteristics
300
150
At any rated load condition and with
rated VRRM applied following surge.
20ETF.. Series
RthJC (DC) = 0.9 K/W
140
130
Peak Half Sine Wave
Forward Current (A)
Maximum Allowable Case
Temperature (°C)
20
15
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Ø
Conduction period
120
110
30°
60°
100
90°
90
120°
250
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
200
150
100
20ETF.. Series
DC
180°
50
80
0
5
10
15
20
30
25
1
35
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
550
35
180°
120°
90°
60°
30°
30
25
20
RMS limit
15
Ø
Conduction angle
10
5
20ETF.. Series
TJ = 150 °C
5
10
15
20
450
25
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
400
350
300
250
200
150
100
0
0
Maximum non-repetitive surge current
versus pulse train duration.
500
Peak Half Sine Wave
Forward Current (A)
Maximum Average Forward
Power Loss (W)
10
20ETF.. Series
50
0.001
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Document Number: 93143
Revision: 22-Oct-08
0.01
1
0.1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
For technical questions, contact: diodes-tech@vishay.com
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3
20ETF..S Soft Recovery Series
Surface Mountable Fast
Soft Recovery Rectifier Diode, 20 A
1000
4.0
100
TJ = 25 °C
TJ = 150 °C
10
20ETF.. Series
IFM = 20 A
2.5
2.0
IFM = 10 A
1.5
1.0
IFM = 5 A
IFM = 1 A
0
1
2
3
4
5
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
0.20
10
20ETF.. Series
TJ = 25 °C
0.15
IFM = 30 A
IFM = 20 A
0.10
IFM = 10 A
IFM = 5 A
0.05
20ETF.. Series
TJ = 150 °C
9
Qrr - Maximum Reverse
Recovery Charge (µC)
trr - Maximum Reverse
Recovery Time (µs)
3.0
0.5
1
0
IFM = 1 A
IFM = 30 A
8
7
IFM = 20 A
6
5
4
IFM = 10 A
3
2
IFM = 5 A
1
IFM = 1 A
0
0
0
200
400
600
800
0
1000
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
0.5
70
20ETF.. Series
TJ = 150 °C
0.4
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
0.3
0.2
20ETF.. Series
TJ = 25 °C
60
Irr - Maximum Reverse
Recovery Current (A)
trr - Maximum Reverse
Recovery Time (µs)
IFM = 30 A
20ETF.. Series
TJ = 25 °C
3.5
Qrr - Maximum Reverse
Recovery Charge (µC)
Instantaneous Forward Current (A)
Vishay High Power Products
0.1
IFM = 30 A
50
IFM = 20 A
40
IFM = 10 A
30
IFM = 5 A
20
10
0
IFM = 1 A
0
0
200
400
600
800
1000
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 93143
Revision: 22-Oct-08
20ETF..S Soft Recovery Series
Surface Mountable Fast
Vishay High Power Products
Soft Recovery Rectifier Diode, 20 A
100
Irr - Maximum Reverse
Recovery Current (A)
20ETF.. Series
TJ = 150 °C
IFM = 30 A
80
IFM = 20 A
60
IFM = 10 A
40
IFM = 5 A
20
IFM = 1 A
0
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
ZthJC - Transient Thermal Impedance (K/W)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
10
Steady state value
(DC operation)
1
0.1
0.01
0.0001
Document Number: 93143
Revision: 22-Oct-08
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
0.001
0.01
20ETF.. Series
0.1
1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
For technical questions, contact: diodes-tech@vishay.com
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20ETF..S Soft Recovery Series
Vishay High Power Products
Surface Mountable Fast
Soft Recovery Rectifier Diode, 20 A
ORDERING INFORMATION TABLE
Device code
20
E
T
F
06
S
TRL
-
1
2
3
4
5
6
7
8
1
-
Current rating (20 = 20 A)
2
-
Circuit configuration:
E = Single diode
3
-
Package:
T = D2PAK (TO-220AC)
4
-
Type of silicon:
F = Fast soft recovery rectifier
5
-
Voltage code x 100 = VRRM
6
-
S = Surface mountable
7
-
02 = 200 V
04 = 400 V
06 = 600 V
None = Tube
TRR = Tape and reel (right oriented)
TRL = Tape and reel (left oriented)
8
-
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95046
Part marking information
http://www.vishay.com/doc?95054
Packaging information
http://www.vishay.com/doc?95032
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 93143
Revision: 22-Oct-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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