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20ETF10STRL

20ETF10STRL

  • 厂商:

    TFUNK(威世)

  • 封装:

    TO263

  • 描述:

    DIODE GEN PURP 1KV 20A D2PAK

  • 数据手册
  • 价格&库存
20ETF10STRL 数据手册
20ETF..S Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 20 A FEATURES/DESCRIPTION Base common cathode + 2 The 20ETF..S fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. D2PAK (SMD-220) 1 Anode - 3 - Anode This product series has been designed and qualified for industrial level. APPLICATIONS PRODUCT SUMMARY • Output rectification and choppers and converters VF at 20 A < 1.31 V IFSM 355 A VRRM 800 to 1200 V freewheeling in inverters, • Input rectifications where severe restrictions on conducted EMI should be met MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS 20 A 800 to 1200 V Sinusoidal waveform VRRM IFSM VF 20 A, TJ = 25 °C trr 1 A, 100 A/µs TJ Range 355 A 1.31 V 95 ns - 40 to 150 °C VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 20ETF08S 800 900 20ETF10S 1000 1100 20ETF12S 1200 1300 6 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t Document Number: 93141 Revision: 22-Oct-08 TEST CONDITIONS VALUES TC = 97 °C, 180° conduction half sine wave 20 10 ms sine pulse, rated VRRM applied 300 10 ms sine pulse, no voltage reapplied 355 10 ms sine pulse, rated VRRM applied 450 10 ms sine pulse, no voltage reapplied 635 t = 0.1 to 10 ms, no voltage reapplied 6350 For technical questions, contact: diodes-tech@vishay.com UNITS A A2s A2√s www.vishay.com 1 20ETF..S Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 20 A ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS VALUES 20 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C VR = Rated VRRM TJ = 150 °C UNITS 1.31 V 11.88 mΩ 0.93 V 0.1 mA 6 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Snap factor Qrr S TEST CONDITIONS VALUES UNITS 400 ns 25 A/µs 25 °C 6.1 A Typical 0.6 IF at 20 Apk 1.7 IFM trr ta tb t dir dt µC Qrr IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient (PCB mount) Soldering temperature TEST CONDITIONS DC operation VALUES UNITS - 40 to 150 °C 0.9 °C/W RthJA (1) 62 TS 240 Approximate weight °C 2 g 0.07 oz. 20ETF08S Marking device Case style D2PAK (SMD-220) 20ETF10S 20ETF12S Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994 www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 93141 Revision: 22-Oct-08 20ETF..S Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A 45 150 20ETF.. Series RthJC (DC) = 0.9 K/W Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) Vishay High Power Products 140 130 Ø Conduction angle 120 30° 60° 110 90° 120° 180° 180° 120° 90° 60° 30° 40 35 30 25 20 RMS limit 15 Ø Conduction period 10 20ETF.. Series TJ = 150 °C 5 0 100 5 0 15 10 20 25 5 0 Average Forward Current (A) 20 15 25 30 35 Fig. 4 - Forward Power Loss Characteristics 350 150 20ETF.. Series RthJC (DC) = 0.9 K/W Ø Conduction period 130 120 60° 110 30° 10 15 250 200 150 20ETF.. Series DC 50 100 5 Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 100 90° 120° 180° 0 At any rated load condition and with rated VRRM applied following surge. 300 140 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) 10 Average Forward Current (A) Fig. 1 - Current Rating Characteristics 20 30 25 1 35 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Average Forward Current (A) Fig. 2 - Current Rating Characteristics 400 35 180° 120° 90° 60° 30° 30 25 20 RMS limit 15 Ø 10 Conduction angle 5 10 15 20 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Document Number: 93141 Revision: 22-Oct-08 250 200 150 20ETF.. Series 0 5 Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 300 100 20ETF.. Series TJ = 150 °C 0 Maximum non-repetitive surge current versus pulse train duration. 350 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) DC 25 50 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 20ETF..S Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A Instantaneous Forward Current (A) Vishay High Power Products 1000 100 TJ = 25 °C TJ = 150 °C 10 20ETF.. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.5 3.0 4.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics 0.7 6 trr - Maximum Reverse Recovery Time (µs) 0.6 0.5 IFM = 30 A IFM = 20 A IFM = 10 A Qrr - Maximum Reverse Recovery Charge (µC) 20ETF.. Series TJ = 25 °C IFM = 5 A IFM = 1 A 0.4 0.3 0.2 0.1 5 IFM = 20 A 4 3 IFM = 10 A 2 IFM = 5 A 1 IFM = 1 A 0 0 0 50 100 150 0 200 dI/dt - Rate of Fall of Forward Current (A/µs) 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 1.2 10 Qrr - Maximum Reverse Recovery Charge (µC) 0.9 IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 0.6 IFM = 30 A 20ETF.. Series TJ = 150 °C 20ETF.. Series TJ = 150 °C trr - Maximum Reverse Recovery Time (µs) IFM = 30 A 20ETF.. Series TJ = 25 °C 0.3 8 IFM = 20 A 6 IFM = 10 A 4 IFM = 5 A 2 IFM = 1 A 0 0 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C www.vishay.com 4 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C For technical questions, contact: diodes-tech@vishay.com Document Number: 93141 Revision: 22-Oct-08 20ETF..S Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A Vishay High Power Products 35 20ETF.. Series TJ = 25 °C 20 IFM = 30 A IFM = 20 A IFM = 10 A 15 20ETF.. Series TJ = 150 °C 30 Irr - Maximum Reverse Recovery Current (A) Irr - Maximum Reverse Recovery Current (A) 25 IFM = 5 A 10 IFM = 1 A 5 IFM = 30 A 25 IFM = 20 A 20 IFM = 10 A 15 IFM = 5 A 10 IFM = 1 A 5 0 0 0 50 100 150 200 0 dI/dt - Rate of Fall of Forward Current (A/µs) 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C ZthJC - Transient Thermal Impedance (K/W) 50 Fig. 13 - Recovery Current Characteristics, TJ = 150 °C 1 Steady state value (DC operation) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.01 0.0001 Document Number: 93141 Revision: 22-Oct-08 0.001 0.01 20ETF.. Series 0.1 1 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 20ETF..S Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A Vishay High Power Products ORDERING INFORMATION TABLE Device code 20 E T F 12 S TRL - 1 2 3 4 5 6 7 8 1 - Current rating (20 = 20 A) 2 - Circuit configuration: E = Single diode 3 - Package: T = D2PAK (TO-220AC) 4 - Type of silicon: F = Fast soft recovery rectifier 5 - Voltage code x 100 = VRRM 6 - S = Surface mountable 7 - 08 = 800 V 10 = 1000 V 12 = 1200 V None = Tape TRR = Tape and reel (right oriented) TRL = Tape and reel (left oriented) 8 - None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95046 Part marking information http://www.vishay.com/doc?95054 Packaging information http://www.vishay.com/doc?95032 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 93141 Revision: 22-Oct-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
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