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20ETS12S

20ETS12S

  • 厂商:

    TFUNK(威世)

  • 封装:

    TO263

  • 描述:

    DIODE GEN PURP 1.2KV 20A D2PAK

  • 数据手册
  • 价格&库存
20ETS12S 数据手册
20ETS...S High Voltage Series Vishay High Power Products Input Rectifier Diode, 20 A DESCRIPTION/FEATURES The 20ETS...S rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 °C junction temperature. Base cathode 2 D2PAK 1 Anode 3 Anode Typical applications are in input rectification and these products are designed to be used with Vishay HPP switches and output rectifiers which are available in identical package outlines. PRODUCT SUMMARY VF at 10 A 1V IFSM 300 A VRRM 800/1200 V This product series has been designed and qualified for industrial level. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS 16.3 21 A Capacitive input filter TA = 55 °C, TJ = 125 °C common heatsink of 1 °C/W MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Sinusoidal waveform VALUES UNITS 20 A VRRM 800/1200 V IFSM 300 A VF 20 A, TJ = 25 °C TJ 1.1 V - 40 to 150 °C VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 20ETS08S 800 900 20ETS12S 1200 1300 1 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 105 °C, 180° conduction half sine wave 20 Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2 t Maximum I2√t for fusing I2√t Document Number: 93501 Revision: 28-Jul-08 10 ms sine pulse, rated VRRM applied 250 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated VRRM applied 316 10 ms sine pulse, no voltage reapplied 442 t = 0.1 to 10 ms, no voltage reapplied 4420 For technical questions, contact: diodes-tech@vishay.com UNITS A A2s A2√s www.vishay.com 1 20ETS...S High Voltage Series Vishay High Power Products Input Rectifier Diode, 20 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM Forward slope resistance rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS 20 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C VR = Rated VRRM TJ = 150 °C VALUES UNITS 1.1 V 10.4 mΩ 0.85 V 0.1 mA 1.0 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA (1) Typical thermal resistance, case to heatsink TEST CONDITIONS TJ, TStg RthCS Marking device UNITS °C DC operation 1.3 For D2PAK version 62 Mounting surface, smooth and greased 0.5 °C/W 2 g 0.07 oz. minimum 6.0 (5.0) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque VALUES - 40 to 150 Case style D2PAK (SMD-220) 20ETS08S 20ETS12S Note (1) When mounted on 1” square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994 www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 93501 Revision: 28-Jul-08 20ETS...S High Voltage Series Input Rectifier Diode, 20 A 35 20ETS.. Series RthJC (DC) = 1.3 °C/W Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 140 Ø 130 Conduction angle 120 110 100 60° 30° Vishay High Power Products 90° 120° 25 20 RMS limit 15 Conduction period 20ETS.. Series TJ = 150 °C 5 0 0 2 4 6 8 0 10 12 14 16 18 20 22 150 300 20ETS.. Series RthJC (DC) = 1.3 °C/W Peak Half Sine Wave Forward Current (A) 140 130 Ø Conduction period 120 30° 110 60° 90° 100 5 10 15 20 25 Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics Average Forward Current (A) Fig. 1 - Current Rating Characteristics Maximum Allowable Case Temperature (°C) Ø 10 180° 10 120° At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 250 200 150 100 20ETS.. Series 180° DC 50 90 0 5 10 15 20 30 25 1 35 Fig. 2 - Current Rating Characteristics 300 180° 120° 90° 60° 30° 25 20 Peak Half Sine Wave Forward Current (A) 30 10 RMS limit 15 Ø 10 Conduction angle 20ETS.. Series TJ = 150 °C 5 100 Number of Equal Amplitude Half Cycle Current Pulse (N) Fig. 5 - Maximum Non-Repetitive Surge Current Average Forward Current (A) Maximum Average Forward Power Loss (W) DC 180° 120° 90° 60° 30° 30 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 250 200 150 100 20ETS.. Series 0 50 0 4 8 12 16 20 24 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Document Number: 93501 Revision: 28-Jul-08 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 20ETS...S High Voltage Series Instantaneous Forward Current (A) Vishay High Power Products Input Rectifier Diode, 20 A 1000 TJ = 25°C 100 TJ = 150°C 10 20ETS.. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forwad Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics ZthJC - Transient Thermal Impedance (°C/W) 10 Steady state value (DC operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 Single pulse 0.01 0.0001 0.001 20ETS.. Series 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 93501 Revision: 28-Jul-08 20ETS...S High Voltage Series Input Rectifier Diode, 20 A Vishay High Power Products ORDERING INFORMATION TABLE Device code 20 E T S 12 S TRL - 1 2 3 4 5 6 7 8 1 - 2 - Current rating (20 = 20 A) Circuit configuration E = Single diode 3 - Package: 4 - 5 - Voltage code x 100 = VRRM 6 - S = TO-220 D2PAK (SMD-220) version 7 - T = TO-220AC Type of silicon: S = Standard recovery rectifier 08 = 800 V 12 = 1200 V None = Tube TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 8 - None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95046 Part marking information http://www.vishay.com/doc?95054 Packaging information http://www.vishay.com/doc?95032 Document Number: 93501 Revision: 28-Jul-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
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