VS-30BQ100-M3
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Vishay Semiconductors
High Performance Schottky Rectifier, 3 A
FEATURES
Cathode
Anode
SMC (DO-214AB)
LINKS TO ADDITIONAL RESOURCES
3D 3D
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
IF(AV)
3.0 A
VR
100 V
The VS-30BQ100-M3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC boards. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
VF at IF
0.62 V
MECHANICAL DATA
IRM
5 mA at 125 °C
TJ max.
175 °C
3D Models
PRIMARY CHARACTERISTICS
EAS
3.0 mJ
Package
SMC (DO-214AB)
Circuit configuration
Single
Case: SMC (DO-214AB)
Molding compound meets UL 94 V-0 flammability rating
Terminals: matte tin plated leads, solderable per
J-STD-002
Polarity: color band denotes cathode end
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
3.0 Apk, TJ = 125 °C
TJ
Range
VALUES
UNITS
3.0
A
100
V
800
A
0.62
V
-55 to +175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
VRWM
VS-30BQ100-M3
UNITS
100
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
SYMBOL
IF(AV)
TEST CONDITIONS
50 % duty cycle at TL = 148 °C, rectangular waveform
50 % duty cycle at TL = 138 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
VRRM applied
VALUES
UNITS
3.0
4.0
800
A
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 1.0 A, L = 6 mH
3.0
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.5
A
Repetitive avalanche current
10 ms sine or 6 ms rect. pulse
70
Revision: 26-Jul-2021
Document Number: 93360
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30BQ100-M3
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
3A
Maximum forward voltage drop
VFM (1)
TJ = 25 °C
6A
3A
TJ = 125 °C
6A
TJ = 25 °C
VALUES
UNITS
0.79
0.90
V
0.62
0.70
0.5
Maximum reverse leakage current
IRM
Maximum junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
115
pF
Typical series inductance
LS
Measured lead to lead 5 mm from package body
3.0
nH
10 000
V/μs
VALUES
UNITS
-55 to +175
°C
Maximum voltage rate of change
dV/dt
VR = Rated VR
TJ = 125 °C
Rated VR
mA
5.0
Note
(1) Pulse width = 300 μs, duty cycle = 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to lead
RthJL (2)
Maximum thermal resistance,
junction to ambient
RthJA
TEST CONDITIONS
12
DC operation
Approximate weight
Marking device
°C/W
46
Case style SMC (DO-214AB)
0.24
g
0.008
oz.
3J
Notes
(1)
(2)
dP tot
1
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dT J R thJA
Mounted 1" square PCB
Revision: 26-Jul-2021
Document Number: 93360
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30BQ100-M3
Vishay Semiconductors
10
10
1
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
www.vishay.com
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
0.1
TJ = 175 °C
1
TJ = 150 °C
TJ = 125 °C
0.1
TJ = 100 °C
0.01
TJ = 75 °C
0.001
TJ = 50 °C
0.0001
TJ = 25°C
0.00001
0
0.2
0.4
0.6
0.8
1
1.2
0
20
40
60
80
100
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
CT - Junction Capacitance (pF)
1000
100
TJ = 25 °C
10
0
20
40
60
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
100
10
PDM
t1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
1
Single pulse
(thermal resistance)
0.1
0.00001
0.0001
0.001
0.01
0.1
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 26-Jul-2021
Document Number: 93360
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30BQ100-M3
Vishay Semiconductors
180
2.5
Average Power Loss (W)
Allowable Lead Temperature (°C)
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160
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
140
Square wave (D = 0.50)
80% rated Vr applied
120
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
2.0
1.5
RMS limit
1.0
DC
0.5
See note (1)
100
0
0
1
2
3
4
0
5
0.5
1.0
1.5
2.0
2.5
3.0 3.5
4.0
4.5
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
100
At any rated load condition
and with rated VRRM applied
following surge
10
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 26-Jul-2021
Document Number: 93360
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30BQ100-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
30
B
Q
100
-M3
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Current rating
3
-
B = SMC
4
-
Q = Schottky “Q” series
5
-
Voltage rating (100 = 100 V)
6
-
Environmental digit:
-M3 = Halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-30BQ100-M3/9AT
PREFERRED PACKAGE CODE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
9AT
3500
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95402
Part marking information
www.vishay.com/doc?95403
Packaging information
www.vishay.com/doc?95404
SPICE model
www.vishay.com/doc?96932
Revision: 26-Jul-2021
Document Number: 93360
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
SMC
DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode band
Mounting Pad Layout
0.185 (4.69) MAX.
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Document Number: 95402
Revision: 09-Jul-10
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www.vishay.com
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Revision: 01-Jan-2024