30EPF10

30EPF..PbF, 30CPF..PbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 30 A 30EPF..PbF FEATURES/DESCRIPTION 30CPF..PbF The 30EPF..PbF and 30CPF..PbF soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. Base common cathode 2 Base common cathode 2, 4 The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. 30CPF series is a drop in replacement for 25CPF series (parallel connection only). 1 Cathode 3 Anode TO-247AC modified Anode 1 This product series has been designed and qualified for industrial level. Anode 3 Compliant to RoHS directive 2002/95/EC. TO-247AC APPLICATIONS • Output rectification and choppers and converters PRODUCT SUMMARY VF at 30 A < 1.41 V trr 95 ns VRRM 1000 V to 1200 V freewheeling in inverters, • Input rectifications where severe restrictions on conducted EMI should be met MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS 30 A 1000 to 1200 V 350 A 1.41 V Sinusoidal waveform VRRM IFSM VF 30 A, TJ = 25 °C trr 1 A, 100 A/µs 95 ns - 40 to 150 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA 30EPF10PbF, 30CPF10PbF 1000 1100 30EPF12PbF, 30CPF12PbF 1200 1300 TJ VOLTAGE RATINGS PART NUMBER 6 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t TEST CONDITIONS TC = 95 °C, 180° conduction half sine wave VALUES UNITS 30 10 ms sine pulse, rated VRRM applied 300 10 ms sine pulse, no voltage reapplied 350 10 ms sine pulse, rated VRRM applied 450 10 ms sine pulse, no voltage reapplied 636 t = 0.1 ms to 10 ms, no voltage reapplied 6360 A A2s A2√s * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94101 Revision: 09-Dec-09 For technical questions, contact: diodestech@vishay.com www.vishay.com 1 30EPF..PbF, 30CPF..PbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 30 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop Forward slope resistance VFM rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS VALUES 30 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C 1.41 V 10.09 mΩ 0.992 V 0.1 VR = Rated VRRM TJ = 150 °C UNITS mA 6 RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Reverse recovery time trr IF at 30 Apk 450 ns Reverse recovery current Irr 6.1 A Qrr 25 A/µs 25 °C 2.16 S Typical 0.6 Reverse recovery charge Snap factor IFM trr ta tb t dir dt µC Qrr IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS TEST CONDITIONS DC operation Mounting surface, smooth and greased - 40 to 150 °C 0.8 °C/W 0.2 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Case style TO-247AC modified (JEDEC) Marking device Case style TO-247AC www.vishay.com 2 UNITS 40 Approximate weight Mounting torque VALUES For technical questions, contact: diodestech@vishay.com 30EPF10 30EPF12 30CPF10 30CPF12 Document Number: 94101 Revision: 09-Dec-09 30EPF..PbF, 30CPF..PbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 30 A 80 30.PF.. Series RthJC (DC) = 0.8 K/W 140 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 130 Ø Conduction angle 120 110 100 60° 90 120° 30° 90° 180° 0 5 10 20 15 30 25 60 DC 50 40 RMS limit 30 Ø 20 Conduction period 10 30.PF.. Series TJ = 150 °C 35 0 20 10 30 40 50 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 350 150 30.PF.. Series RthJC (DC) = 0.8 K/W 140 130 Ø Conduction period 120 110 30° 100 60° 90° 90 At any rated load condition and with rated VRRM applied following surge. 300 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) 180° 120° 90° 60° 30° 70 0 80 Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 250 200 150 100 120° 30.PF.. Series DC 180° 50 80 10 0 20 40 30 50 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Average Forward Current (A) Fig. 2 - Current Rating Characteristics 400 60 180° 120° 90° 60° 30° 50 40 RMS limit 30 20 Ø Conduction angle 10 10 15 20 25 30 250 200 150 30.PF.. Series 0 5 Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 300 100 30.PF.. Series TJ = 150 °C 0 Maximum non-repetitive surge current versus pulse train duration. 350 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) Vishay High Power Products 35 50 0.01 0.1 1 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 94101 Revision: 09-Dec-09 For technical questions, contact: diodestech@vishay.com www.vishay.com 3 30EPF..PbF, 30CPF..PbF Soft Recovery Series Instantaneous Forward Current (A) Vishay High Power Products Fast Soft Recovery Rectifier Diode, 30 A 1000 100 TJ = 25 °C TJ = 150 °C 10 30.PF.. Series 1 0 2 1 3 4 5 6 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics 0.7 Qrr - Maximum Reverse Recovery Charge (µC) trr - Maximum Reverse Recovery Time (µs) 0.6 6 IFM = 30 A IFM = 20 A IFM = 10 A 30.PF.. Series TJ = 25 °C IFM = 5 A IFM = 1 A 0.5 0.4 0.3 0.2 0.1 0 IFM = 20 A 4 3 IFM = 10 A 2 IFM = 5 A 1 IFM = 1 A 0 0 50 100 150 200 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 1.2 10 30.PF.. Series TJ = 150 °C 30.PF.. Series TJ = 150 °C 1.0 Qrr - Maximum Reverse Recovery Charge (µC) trr - Maximum Reverse Recovery Time (µs) IFM = 30 A 30.PF.. Series TJ = 25 °C 5 IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 0.8 0.6 0.4 0.2 IFM = 30 A 8 IFM = 20 A 6 4 IFM = 10 A 2 IFM = 5 A IFM = 1 A 0 0 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C www.vishay.com 4 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C For technical questions, contact: diodestech@vishay.com Document Number: 94101 Revision: 09-Dec-09 30EPF..PbF, 30CPF..PbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 30 A 25 35 30.PF.. Series TJ = 150 °C IFM = 30 A 30 IFM = 20 A Irr - Maximum Reverse Recovery Current (A) 30.PF.. Series TJ = 25 °C 20 Irr - Maximum Reverse Recovery Current (A) Vishay High Power Products IFM = 10 A 15 IFM = 5 A 10 IFM = 1 A 5 IFM = 30 A 25 IFM = 20 A 20 IFM = 10 A 15 IFM = 5 A 10 IFM = 1 A 5 0 0 0 50 100 150 200 0 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C ZthJC - Transient Thermal Impedance (K/W) 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C 1 Steady state value (DC operation) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.01 0.0001 30.PF.. Series 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Document Number: 94101 Revision: 09-Dec-09 For technical questions, contact: diodestech@vishay.com www.vishay.com 5 30EPF..PbF, 30CPF..PbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 30 A Vishay High Power Products ORDERING INFORMATION TABLE Device code 30 E P F 12 PbF 1 2 3 4 5 6 1 - Current rating (30 = 30 A) 2 - Circuit configuration: E = Single diode C = Single diode, 3 pins 3 - Package: P = TO-247AC modified 4 - Type of silicon: F = Fast recovery 5 - 6 - 10 = 1000 V 12 = 1200 V Voltage code x 100 = VRRM None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model www.vishay.com 6 TO-247AC modified www.vishay.com/doc?95253 TO-247AC www.vishay.com/doc?95223 TO-247AC modified www.vishay.com/doc?95255 TO-247AC www.vishay.com/doc?95226 www.vishay.com/doc?95184 For technical questions, contact: diodestech@vishay.com Document Number: 94101 Revision: 09-Dec-09 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) Ø P E B (2) R/2 N A2 S (Datum B) Ø K M DBM FP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb 0.10 M C A M Planting (4) E1 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e FK L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) ΦP E B (2) R/2 N A2 S (Datum B) Ø K M DBM ΦP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb Planting View A - A C 2x e A1 b4 0.10 M C A M (4) E1 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e K L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerance per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 21-Jun-11 Document Number: 95253 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1