4N32-X009

End of Life January-2018 - Alternative Device: CNY17 4N32, 4N33 www.vishay.com Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, With Base Connection FEATURES A 1 6 B C 2 5 C NC 3 4 E • Very high current transfer ratio, 500 % min. • High isolation resistance, 1011 Ω typical • Standard plastic DIP package • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 i179005_1 V D E i179005 AGENCY APPROVALS • UL1577, file no. E52744 system code H DESCRIPTION • DIN EN 60747-5-2 (VDE 0884) / DIN EN 60747-5-5 (pending), available with option 1 The 4N32 and 4N33 are optically coupled isolators with a gallium arsenide infrared LED and a solicon photodarlington sensor. • BSI IEC 60950; IEC 60065 • FIMKO Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. ORDERING INFORMATION 4 N 3 # PART NUMBER - X 0 # PACKAGE OPTION # DIP Option 6 7.62 mm 10.16 mm Option 7 Option 9 T TAPE AND REEL > 0.1 mm > 0.7 mm AGENCY CERTIFIED/PACKAGE CTR (%) UL, BSI, FIMKO ≥ 500 ≥ 500 DIP-6 4N32 4N33 DIP-6, 400 mil, option 6 4N32-X006 - SMD-6, option 7 4N32-X007T (1) 4N33-X007T (1) SMD-6, option 9 4N32-X009T (1) 4N33-X009T (1) ≥ 500 ≥ 500 DIP-6 4N32-X001 4N33-X001 SMD-6, option 7 4N32-X017T 4N33-X017T (1) VDE, UL, BSI, FIMKO Notes • Additional options may be possible, please contact sales office (1) Also available in tubes, do not put T on the end Rev. 1.2, 15-Feb-11 Document Number: 81865 1 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 End of Life January-2018 - Alternative Device: CNY17 4N32, 4N33 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 3 V Forward current IF 60 mA Power dissipation Derate linearly Pdiss From 55 °C 100 mW 1.33 mW/°C OUTPUT Collector emitter breakdown voltage BVCEO 30 V Emitter base breakdown voltage BVEBO 8 V Collector base breakdown voltage BVCBO 50 V Emitter collector breakdown voltage BVECO 5 V IC 100 mA Pdiss 150 mW 2 mW/°C Collector (load) current Power dissipation Derate linearly COUPLER Total dissipation Ptot 250 mW 3.3 mW/°C Derate linearly Isolation test voltage (between emitter 1s VISO 5300 VRMS 7 mm min. Leakage path Air path 7 mm min. VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature Tstg -55 to +150 °C Operating temperature Tamb -55 to +100 °C Isolation resistance Lead soldering time (1) at 260 °C 10 s Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 50 mA VF - 1.25 1.5 V Reverse current VR = 3 V IR - 0.1 100 μA Capacitance VR = 0 V CO - 25 pF OUTPUT Collector emitter breakdown voltage (1) IC = 100 μA, IF = 0 BVCEO 30 - - V Collector base breakdown voltage (1) IC = 100 μA, IF = 0 BVCBO 50 - - V Emitter base breakdown voltage (1) IC = 100 μA, IF = 0 BVEBO 8 - - V Emitter collector breakdown voltage (1) IC = 100 μA, IF = 0 BVECO 5 10 - V VCE = 10 V, IF = 0 ICEO - 1 100 nA IC = 0.5 mA, VCE = 5 V hFE 13 - - VCEsat - 1 - Collector emitter leakage current COUPLER Collector emitter saturation voltage V Coupling capacitance 1.5 pF Notes • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements (1) Indicates JEDEC® registered values Rev. 1.2, 15-Feb-11 Document Number: 81865 2 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 End of Life January-2018 - Alternative Device: CNY17 4N32, 4N33 www.vishay.com Vishay Semiconductors CURRENT TRANSFER RATIO PARAMETER Current transfer ratio TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT VCE = 10 V, IF = 10 mA CTR 500 - - % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Turn-on time VCC = 10 V, IC = 50 mA ton - - 5 μs Turn-off time IF = 200 mA, RL = 180 Ω toff - - 100 μs SYMBOL MIN. TYP. MAX. UNIT - 55 / 100 / 21 399 SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION Climatic classification (according to IEC 68 part 1) Comparative tracking index 175 - VIOTM CTI 8000 - - V VIORM 890 - - V PSO - - 700 mW ISI - - 400 mA TSI - - 175 °C Creepage distance Standard DIP-6 7 - - mm Clearance distance Standard DIP-6 7 - - mm Creepage distance 400 mil DIP-6 8 - - mm Clearance distance 400 mil DIP-6 8 - - mm Insulation thickness, reinforced rated per IEC 60950 2.10.5.1 0.4 - - mm Note • As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1.0 10 Normalized to: VCE = 5 V IF = 10 mA 0.8 TA = 25 °C VCE = 5 V 0.6 0.4 0.2 NICE - Normalized ICE NCTRCE - Normalized CTRCE 1.2 Normalized to: VCE = 5 V 1 IF = 10 mA VCE = 5 V TA = 25 °C VCE = 1 V 0.1 0.01 VCE = 1 V 0.0 0.1 i4n32-33_02 1 10 100 1000 IF - LED Current (mA) Fig. 1 - Normalized Non-Saturated and Saturated CTRCE vs. LED Current Rev. 1.2, 15-Feb-11 0.001 0.1 i4n32-33_03 1 10 100 IF - LED Current (mA) Fig. 2 - Normalized Non-Saturated and Saturated Collector Emitter Current vs. LED Current Document Number: 81865 3 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 End of Life January-2018 - Alternative Device: CNY17 4N32, 4N33 www.vishay.com Vishay Semiconductors 20 Normalized to: VCB = 3.5 V 1 IF = 10 mA tpHL - High/Low Propagation Delay (µs) NICB - Normalized ICB 10 TA = 25 °C 0.1 0.01 1 kΩ 10 1 10 0 100 0 IF = LED Current (mA) i4n32-33_04 100 Ω 5 0.001 0.1 TA = 25 °C VCC = 5 V VTH = 1.5 V 15 10 5 15 20 IF - LED Current (mA) i4n32-33_07 Fig. 6 - High to Low Propagation Delay vs. Collector Load Resistance and LED Current Fig. 3 - Normalized Collector Base Photocurrent vs. LED Current 10 000 hFE - Forward Transfer Gain TA = 25 °C VCE = 5 V IF 8000 VCC RL 6000 VO 4000 tD tR VO tPLH IF VCE = 1 V 2000 VTH = 1.5 V tPHL 0 0.01 0.1 1 10 100 tS tF i4n32-33_08 Ib - Base Current (µA) i4n32-33_05 Fig. 4 - Non-Saturated and Saturated hFE vs. Base Current Fig. 7 - Switching Waveform and Switching Schematic tpLH - Low/High Propagation Delay (µs) 80 TA = 25 °C, VCC = 5 V VTH = 1.5 V 1 kΩ 60 220 Ω 40 470 Ω 20 100 Ω 0 0 i4n32-33_06 5 10 15 20 IF - LED Current (mA) Fig. 5 - Low to High Propagation Delay vs. Collector Load Resistance and LED Current Rev. 1.2, 15-Feb-11 Document Number: 81865 4 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 End of Life January-2018 - Alternative Device: CNY17 4N32, 4N33 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters DIP-6 Package Dimensions Pin one ID 3 2 1 4 5 6 6.4 ± 0.1 ISO method A 8.6 ± 0.1 7.62 typ. 1.2 ± 0.1 1 min. 3.555 ± 0.255 18° 4° typ. 2.95 ± 0.5 0.8 min. 0.85 ± 0.05 0.25 typ. 3° to 9° 0.5 ± 0.05 7.62 to 8.81 i178004 2.54 typ. Option 6 Option 7 Option 9 7.62 typ. 7.62 typ. 10.3 max. 7.62 typ. 0.7 min. 3.5 ± 0.3 4.3 ± 0.3 0.1 ± 0.1 3.6 ± 0.3 0.1 min. 8 min. 2.55 ± 0.25 0.6 min. 10.3 max. 0.6 min. 8 min. 10.16 typ. 0.76 R 0.25 2.54 0.76 2.54 R 0.25 1.78 8 min. 11.05 20802-24 1.52 1.78 8 min. 11.05 1.52 PACKAGE MARKING 4N32 -X017 V YWW H 68 21764-18 Notes • Example marking for 4N32-X017T • Only options 1, and 7 reflected in the package marking • The VDE logo is only marked on option 1 parts • Tape and reel suffix (T) is not part of the package marking Rev. 1.2, 15-Feb-11 Document Number: 81865 5 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 1 Document Number: 91000